Harri Lipsanen

Temperature Dependence Of Current‐Voltage Characteristics Of Au/p‐GaAsN Schottky Barrier Diodes, With Small N Content

The temperature dependent current‐voltage (IVT) measurements on Au Schottky barrier diodes made on intrinsically p‐type GaAs1−xNx were carried out. Three samples with small N content (xu2009=u20090.5%, 0.7% and 1%) were studied. The temperature range was 10–320 K. All contacts were found to be of Schottky type. The ideality factor and the apparent barrier height calculated by using thermionic emission (TE) theory show a strong temperature dependence. The current voltage (IV) curves are fitted based on the TE theory, yielding a zero‐bias carrier height (ΦB0) and a ideality factor (n) that decrease and increase with decreasing temperature, respectively. The linear fitting of ΦB0 vs n and its subsequent evaluation for nu2009=u20091 give a zero‐bias ΦB0 in the order of 0.35–0.4 eV. From the reverse‐bias IV study, it is found that the experimental carrier density (NA) values increase with increasing temperature and are in agreement with the intrinsic carrier concentration for GaAs.

Temperature Dependence of Current‐Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

Current‐Voltage (IV) measurements on Au/Ga0.51In0.49P Schottky barrier diodes in the temperature range 10–320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheungs method is used to estimate the value of a possible series resistance RS and the ideality factor n. It is found that RS is around 42 Ω at 10 K and decreases with temperature to around 7 Ω at 320 K. The IV curves were corrected for RS. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero‐bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse‐bias IV graphs, it is found that the experimental carrier density (ρ) value increases with temperature.