Jorge Pedrós

Coupling light into graphene plasmons through surface acoustic waves

We propose a scheme for coupling laser light into graphene plasmons with the help of electrically generated surface acoustic waves. The surface acoustic wave forms a diffraction grating which allows us to excite the long lived phononlike branch of the hybridized graphene plasmon-phonon dispersion with infrared laser light. Our approach avoids patterning the graphene sheet, does not rely on complicated optical near-field techniques, and allows us to electrically switch the coupling between far-field radiation and propagating graphene plasmons.

Automatic graphene transfer system for improved material quality and efficiency

In most applications based on chemical vapor deposition (CVD) graphene, the transfer from the growth to the target substrate is a critical step for the final device performance. Manual procedures are time consuming and depend on handling skills, whereas existing automatic roll-to-roll methods work well for flexible substrates but tend to induce mechanical damage in rigid ones. A new system that automatically transfers CVD graphene to an arbitrary target substrate has been developed. The process is based on the all-fluidic manipulation of the graphene to avoid mechanical damage, strain and contamination, and on the combination of capillary action and electrostatic repulsion between the graphene and its container to ensure a centered sample on top of the target substrate. The improved carrier mobility and yield of the automatically transferred graphene, as compared to that manually transferred, is demonstrated by the optical and electrical characterization of field-effect transistors fabricated on both materials. In particular, 70% higher mobility values, with a 30% decrease in the unintentional doping and a 10% strain reduction are achieved. The system has been developed for lab-scale transfer and proved to be scalable for industrial applications.

Voltage controlled SAW filters on 2DEG AlGaN/GaN heterostructures

SAW devices fabricated on AlGaN/GaN 2DEG heterostructures may be used as a voltage controlled filters regarding the insertion losses. The control is performed through external voltages applied to the interdigital transducers. These filters could be integrated into future MMIC circuits based on AlGaN/GaN high electron mobility transistors.

Improvement of the adhesion between polyaniline and commercial carbon paper by acid treatment and its application in supercapacitor electrodes

Abstract Commercial carbon paper was coated with polyaniline (PANI) using in situ polymerization of aniline. Prior to the PANI coating, acid treatment was performed to carboxylate the surface of the carbon paper for enhancing PANI adhesion by sonication of the carbon paper in a mixture of concentrated sulfuric and nitric acids. The loading mass density of PANI on the acid-treated carbon paper increased more than three times compared to that on the carbon paper without acid treatment. The specific capacitance also increased from 112 to 174 F/g in a two-electrode system (calculated using a total mass of carbon paper and PANI) due to better PANI coating on the acid-treated carbon paper. The simple acid treatment provides good adhesion of PANI to the commercial carbon paper and can be applied to prepare supercapacitor electrodes.

Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model

Due to its intrinsic high mobility, graphene has proved to be a suitable material for high-speed electronics, where graphene field-effect transistor (GFET) has shown excellent properties. In this work, we present a method for extracting relevant electrical parameters from GFET devices using a simple electrical characterization and a model fitting. With experimental data from the device output characteristics, the method allows to calculate parameters such as the mobility, the contact resistance, and the fixed charge. Differentiated electron and hole mobilities and direct connection with intrinsic material properties are some of the key aspects of this method. Moreover, the method output values can be correlated with several issues during key fabrication steps such as the graphene growth and transfer, the lithographic steps, or the metalization processes, providing a flexible tool for quality control in GFET fabrication, as well as a valuable feedback for improving the material-growth process.

Surface-acoustic-wave-controlled photodetectors

Nitride semiconductor devices have recently been developed for a number of electronic and optoelectronic applications, including amplifiers, light emitters and several kinds of sensors. In particular, ultraviolet detectors with a tailored spectral response can be achieved due to the direct wide bandgap of AlGaN alloys; on the other side, acoustic wave devices take advantage of the piezoelectric and elastic properties. In this work, we will describe the fabrication and characterization of a novel kind of optical detector, based on the interaction of surface acoustic waves and photocarriers. The response, which is linear with the incident optical power, can be controlled either by modifying the input power of the RF signal which creates the acoustic wave, or by tuning its frequency, in the latter case with a very high sensitivity. Several applications can be envisaged as a result of this synergy, such as imaging displays and electro-optical modulators.

Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates

Surface plasmon polaritons in graphene couple strongly to surface phonons in polar substrates leading to hybridized surface plasmon-phonon polaritons (SPPPs). We demonstrate that a surface acoustic wave (SAW) can be used to launch propagating SPPPs in graphene/h-BN heterostructures on a piezoelectric substrate like AlN, where the SAW-induced surface modulation acts as a dynamic diffraction grating. The efficiency of the light coupling is greatly enhanced by the introduction of the h-BN film as compared to the bare graphene/AlN system. The h-BN interlayer not only significantly changes the dispersion of the SPPPs but also enhances their lifetime. The strengthening of the SPPPs is shown to be related to both the higher carrier mobility induced in graphene and the coupling with h-BN and AlN surface phonons. In addition to surface phonons, hyperbolic phonons appear in the case of multilayer h-BN films leading to hybridized hyperbolic plasmon-phonon polaritons (HPPPs) that are also mediated by the SAW. These results pave the way for engineering SAW-based graphene/h-BN plasmonic devices and metamaterials covering the mid-IR to THz range.

Reducing sheet resistance of self-assembled transparent graphene films by defect patching and doping with UV/ozone treatment

Abstract Liquid phase exfoliation followed by Langmuir-Blodgett self-assembly (LBSA) is a promising method for scalable production of thin graphene films for transparent conductor applications. However, monolayer assembly into thin films often induces a high density of defects, resulting in a large sheet resistance that hinders practical use. We introduce UV/ozone as a novel photochemical treatment that reduces sheet resistance of LBSA graphene threefold, while preserving the high optical transparency. The effect of such treatment on our films is opposite to the effect it has on mechanically exfoliated or CVD films, where UV/ozone creates additional defects in the graphene plane, increasing sheet resistance. Raman scattering shows that exposure to UV/ozone reduces the defect density in LBSA graphene, where edges are the dominant defect type. FTIR spectroscopy indicates binding of oxygen to the graphene lattice during exposure to ozone. In addition, work function measurements reveal that the treatment dopes the LBSA film, making it more conductive. Such defect patching paired with doping leads to an accessible way of improving the transparent conductor performance of LBSA graphene, making solution-processed thin films a candidate for industrial use.