Joseph Michael Carpinelli

High Performance InGaAsSb TPV Cells

Lattice‐matched 0.52 eV InGaAsSb/GaSb thermophotovoltaic (TPV) cells are grown using a multi‐wafer metal‐organic‐chemical‐vapor‐deposition (MOCVD) system. MOCVD growth series of P/N junction epitaxial structures consisting of as many as 30 wafers demonstrate good run‐to‐run reproducibility, good uniformity across the wafer and exhibit high performance with open circuit voltages of ∼300mV and fill factors of 70% at 25°C. Growth parameters, including temperature, surface preparation and substrate orientation, that directly affect growth have been optimized for the active 0.52 eV InGaAsSb region and GaSb confinement layers. Focus is on increasing TPV diode performance through architectural improvements, specifically by reducing the minority carrier recombination velocity at the emitter and base front and back interfaces. Work in support of incorporating a back surface reflector (BSR) including the growth of N/P diode architectures and the addition of a lattice‐matched InAsSb etch stop layer for substrate rem...