Joshua M. LaForge

Conductivity control of as-grown branched indium tin oxide nanowire networks

Branched indium tin oxide (ITO) nanowire networks are promising candidates for transparent conductive oxide applications, such as optoelectronic electrodes, due to their high porosity. However, these branched networks also present new challenges in assessing conductivity. Conventional four-point probe techniques cannot separate the effect of porosity on the long-range conductivity from the intrinsic material conductivity. Here we compare the average nanoscale conductivity within the film measured by terahertz time-domain spectroscopy (THz-TDS) to the film conductivity measured by four-point probe in a branched ITO nanowire network. Both techniques report conductivity increases with deposition flux rate from 0.5 to 3.0 nm s(-1), achieving a maximum of ~ 10 (Ω cm)(-1). Modeling the THz-TDS conductivity data using the Drude-Smith model allows us to distinguish between conductivity increases resulting from morphological changes and those resulting from the intrinsic properties of the ITO. In particular, the intrinsic material conductivity within the nanowires can be extracted, and is found to reach a maximum of ~ 3000 (Ω cm)(-1), comparable to bulk ITO. To determine the mechanism responsible for increasing conductivity with flux rate, we characterize dopant concentration and morphological changes (i.e., to branching behavior, nanowire diameter and nucleation layers). We propose that changes in the electron density, primarily due to changes in O-vacancy concentration at different flux rates, are responsible for the observed conductivity increase. This understanding will assist balancing structural and conductivity requirements in applications of transparent conductive oxide networks.

Directed Branch Growth in Aligned Nanowire Arrays

Branch growth is directed along two, three, or four in-plane directions in vertically aligned nanowire arrays using vapor-liquid-solid glancing angle deposition (VLS-GLAD) flux engineering. In this work, a dynamically controlled collimated vapor flux guides branch placement during the self-catalyzed epitaxial growth of branched indium tin oxide nanowire arrays. The flux is positioned to grow branches on select nanowire facets, enabling fabrication of aligned nanotree arrays with L-, T-, or X-branching. In addition, a flux motion algorithm is designed to selectively elongate branches along one in-plane axis. Nanotrees are found to be aligned across large areas by X-ray diffraction pole figure analysis and through branch length and orientation measurements collected over 140 μm(2) from scanning electron microscopy images for each array. The pathway to guided assembly of nanowire architectures with controlled interconnectivity in three-dimensions using VLS-GLAD is discussed.

A little ribbing: Flux starvation engineering for rippled indium tin oxide nanotree branches

Combining vapour-liquid-solid growth with glancing angle deposition (VLS-GLAD) facilitates fabrication of branched nanowires not possible with either technique alone. Indium tin oxide (ITO) nanostructures grown by VLS-GLAD produce extremely porous nanotree structures, where periodic branch diameter oscillations are sometimes observed. We explain this rippled branch growth with a simple model linking the physics governing branch growth to the process variables controlled in VLS-GLAD. The model is verified by inducing specific, aperiodic ripples onto growing ITO branches through macroscopic vapour flux control and manipulation of local shadowing.

Disassembling glancing angle deposited films for high-throughput, single-post growth scaling measurements.

With growing interest in nanostructured thin films produced by glancing angle deposition (GLAD), it becomes increasingly important to understand their overall growth mechanics and nanocolumn structure. We present a new method of isolating the individual nanocolumns of GLAD films, facilitating automated measurement of their broadening profiles. Data collected for α = 81° TiO2 vertical nanocolumns deposited across a range of substrate rotation rates demonstrates that these rates influence growth scaling parameters. Further, individual posts were found in each case that violate predicted Kardar-Parisi-Zhang growth scaling limits. The techniques current iteration is comparable to existing techniques in speed: though data were studied from 10,756 individual objects, the majority could not be confidently used in subsequent analysis. Further refinement may allow high-throughput automated film characterization and permit close examination of subtle growth trends, potentially enhancing control over GLAD film broadening and morphology.