Josip Maric

Advances in performance and beam quality of 9xx-nm laser diodes tailored for efficient fiber coupling

The impact of new direct-diode and fiber laser systems on industrial manufacturing drives the demand for highbrightness diode laser pump sources suitable for simple fiber coupling with high efficiency. Within the German funded project HEMILAS laser mini-bars with different bar geometries and small fill factors were investigated. We present results on 9xx nm bars with tailored beam parameter products for simplified coupling to fibers with core diameters of 200μm and 300μm with a numerical aperture of 0.22 and compare beam quality parameters, brightness, conversion efficiency, and thermal performance of different bar designs. Optimized epitaxy structures yield conversion efficiency maxima above 66%. The slow axis divergence angle of mini-bars with a fill factor of 10% featuring five 100μm wide and 4mm long emitters based on this epitaxy structure stays below 7°, which corresponds to a beam parameter product of 15mm mrad, up to very high output power of over 45W. This result was achieved for mounting on actively cooled submounts using hard solder. A similar bar with 5mm cavity length and using soft soldering reached an output power of 60W at the same beam parameter product. At 4mm cavity length, no COMD failures were observed up to currents exceeding the thermal rollover and the maximum output cw power was 95W.

Brilliant low fill factor diode laser bars at 9xx nm for fiber coupling

New semiconductor multi emitters combine the advantages of laser bars and strength of single emitters for fiber coupling applications. We introduce a new technology to drive the device at highest power density at the laser facet. The new technology enables us to reduce the fill factor while maintaining output power per laser bar at reliable and efficient operation. The overall output power and slow axis beam parameter product is scaled with the numbers of emitters and may be coupled into a single fiber with low effort in beam shaping or fiber combining. We demonstrate that multi emitters can operate at same power level as the same number of single emitters. In this paper we present data on highly efficient and reliable 9xx nm laser bars designed for a defined fiber diameter and numerical aperture. For comparison single emitters and short bars with different fill factors were investigated. Efficiencies above 60% were reached with 4mm cavity length and fast axis far field angles of 45° (95%). Stable operation at powers up to 70W from short bars with five 100μm wide emitters was reached. Slow axis divergence is below 7° up to power levels of 38W and is suitable for coupling into 200μm NA 0.22 fibers with only slow axis and fast axis collimation without beam rearrangement.

High-power diode lasers: technology and application in Europe

The application field of high power semiconductor lasers is growing rapidly and covers e.g. solid state laser pumping, metal and plastic welding, hard and soft soldering, suface treatment and others. Preferably those applications are attractive, which do not require extremely high beam quality. We have investigated high power diode-laser bars from 808 nm to 980 nm. The scope of this presentation is on focusability and beam quality. For better beam shaping structures with reduced fill factor of 25% to 30% were developed. They were operated in continuous wave operation at power levels of up to 55 W. Tests indicate extrapolated lifetimes of more than 100,000 hours at 40 W at 980 nm cw and about 10,000 hours at 45 W - 50 W at 940 nm and 808 nm. Monolithically stacked NonostacksR were investigated. Operation up to 100°C with excellent lifetimes could be demonstrated. New concepts and applications for low mode number high power diode lasers like tapered laser bars are presented. Examples for various current areas of interest in European research facilities will be given.

High-power IR laser in SMT package

Laser dies in an optical power range of 1-3 Watts are widely assembled in popular TO- packages. TO-packages suffer from high thermal resistance and limited output power. Bad thermal contact between circuit boards and TO-devices can cause overheating of laser chips, significantly reducing the operating life time. We developed a compact high heat-load SMT package for an optical power up to 7 Watts in CW operation with good life time results. The new package for high power laser chips combines highly efficient heat dissipation with Surface-mount technology. A Direct-Bonded-Copper (DBC) substrate acts as a base plate for the laser chip and heat sink. The attached frame is used for electrical contacting and acts as beam reflector where the laser light is reflected at a 45° mirror. In the application the DBC base plate of the SMT-Laser is directly soldered to a Metal-Core-PCB by reflow soldering. The overall thermal resistance from laser chip to the bottom of a MC-PCB was measured as low as 2.5 K/W. The device placement process can be operated by modern high-speed mounting equipment. The direct link between device and MC-PCB allows CW laser operation up to 6-7 watts at wavelengths of 808nm to 940nm without facing any overheating symptom like thermal roll over. The device is suitable for CW and QCW operation. In pulsed operation short rise and fall times of <2ns have been demonstrated. New application fields like infrared illumination for sensing purposes in the automotive industry and 3D imaging systems could be opened by this new technology.

Highly reliable and efficient laser bars and cost efficient packaging

High power diode lasers convince by their very efficient conversion of electrical into optical energy. Besides high efficiencies and record absolute power levels, reliability in all possible operation modes and cost become increasingly important. We present diode laser bars in the 940nm range with wall plug efficiencies of about 65% at an emission power of 100W and with excellent reliability. The test had been performed on a stack with 5 bars at an output power of 100W per 1cm bar and after about 4000hrs test time, lifetimes of more than 40 000hour were estimated. The efficiency of these bars was at the beginning and at the end of this test about 65%. Operation modes between cw operation and q-cw (200μsec pulses) were evaluated and it will be shown, that pulses in the range of 1Hz are the hardest conditions, which can cause catastrophic failures. Using submounts with matched thermal expansion coefficient, this failure was prevented and lifetimes similar to cw-operation were reached. In order to reduce costs of laser power, we developed a laser package that offers high power at good reliability and provides a collimated beam for about 5

Tailored 9xx nm laser bars for fiber coupling

/W, as a cost target in mass production conditions. This was achieved by using packaging concepts that were developed for high power semiconductor devices. These results will further enhance the applicability of diode lasers in industrial application.

Laser diode bar provided with a parallel connected diode for bridging said laser diode bar in case of failure

Status on low fill factor 9xx nm laser bars will be presented. Conversion efficiency peaks above 66% and slow axis divergence of less than 7° was reached up to 45W for 10%-fill factor half-bars.