Jozef Reinerus Maria Bergervoet

An interference-robust receiver for ultra-wideband radio in SiGe BiCMOS technology

A 3.1-4.8 GHz ultra-wideband (UWB) receiver front-end for high data rate, short-range communication is presented. The receiver, based on the Multi Band OFDM Alliance (MBOA) standard proposal, consists of a zero-IF receive chain and an ultra-fast frequency-hopping synthesizer. The combination of high-linearity RF circuits, aggressive baseband filtering and low local oscillator spurs from the synthesizer results in an interference-robust receiver, having the ability to co-exist with systems operating in the 2.4-GHz and 5-GHz ISM bands. The packaged device shows an overall noise figure of 4.5 dB and has a measured input IP3 of -6 dBm and input IP2 of +25 dBm. Spurious tones generated by the synthesizer are below -45 dBc and -50 dBc in the 2.4-GHz and 5-GHz ISM bands, respectively. The hopping speed is well below the required 9.5 ns. The complete receive chain has been realized in a 0.25 /spl mu/m BiCMOS technology and draws 78mA from a 2.5-V supply.

A SiGe BiCMOS 1ns fast hopping frequency synthesizer for UWB radio

A fully integrated multi-tone generator based on 2 PLL and a SSB mixer in 0.25/spl mu/m SiGe BiCMOS achieves frequency hopping between 3.432, 3.960, and 4.488GHz within 1 ns. Spurious tones are below -50dBc in the 5GHz and -45dBc in the 2.4GHz ISM bands. The power dissipation is 73mW from a 2.7V supply. The close-in phase noise is below -90dBc/Hz and out-of-band phase noise is below -100dBc/Hz at 1MHz offset.

An interference robust receive chain for UWB radio in SiGe BiCMOS

A fully integrated receive chain for UWB radio in SiGe BiCMOS is presented. The packaged device includes a wideband LNA, a mixer, and an IF filter and has an overall NF of 7.5 dB. The IIP3 of -3 dBm and the accurately controlled and steep filter characteristic enables a robust coexistence with systems working in the 2.4 and 5 GHz bands.

A fully integrated 3-band OFDM UWB transceiver in 0.25/spl mu/m SiGe BiCMOS

A fully integrated transceiver for 3-band OFDM UWB is presented. It has been implemented in a 0.25mum SiGe BiCMOS process, and has a die area of less than 4mm2. The power consumption is 47mA, 43mA, and 27mA at 2.7V supply for receiver, transmitter, and synthesizer respectively. The chip features DC offset cancellation, a loop-back test mode, a single input/output pin for antenna connection, a 1GHz baseband clock output and is robust against interferers from cellular and ISM bands. The measured EVM is 8%, while the overall NF is 4.5dB and the iIP3 is -6dBm