Ju-Eun Kim

Enhanced cytomegalovirus infection in human trabecular meshwork cells and its implication in glaucoma pathogenesis.

Cytomegalovirus (CMV) is one of the infectious causes of hypertensive anterior uveitis, which is characterized by recurrent episodes of elevated intraocular pressure (IOP) and mild anterior uveitis. Despite the potentially vision-threatening complications of this disease, the underlying mechanisms remain largely undefined. We aimed to investigate whether human trabecular meshwork (TM) cells, the key cell type that regulates IOP, could support CMV replication, as well as demonstrate the relevant pathological changes in TM. When human TM cells were infected with CMV AD169, immediate early antigens were detected 1 day post-infection (dpi); cytopathic changes including rounding, a ballooned appearance with disorganization, and a decreased number of stress fibers were noted in TM cells. The marked increase in viral DNA accumulation was observed most notably at 5 and 7 dpi, suggesting that the active viral infection in human TM cells could be the key mechanism underlying the elevation of IOP in anterior viral uveitis. Notably, CMV infection enhanced the production of transforming growth factor (TGF)-β1, an upstream molecule that increases the resistance of the outflow pathway in human TM cells. The increase of TGF-β1 was countervailed by additional treatment with corticosteroids. Our results provide a pathogenic mechanism for IOP elevation in viral anterior uveitis.

Modification of block copolymer photonic gels for colorimetric biosensors

Abstract

Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8–133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

Nanometer-scale lithography of the Langmuir–Blodgett films with atomic force microscope

Abstract The Langmuir–Blodgett (LB) films as a resist for scanning probe microscope (SPM) lithography have been studied extensively. The poly(methylphenyl methacrylate) (PMPMA) LB films were prepared and fabricated by atomic force microscopy (AFM) lithography. The induced bias voltage, scanning speed and developing conditions are very important for the high resolution AFM lithography. When the exposure was carried out at the bias voltage of −25 V, the protruding lines appeared in the exposed regions. This result provided evidence of a negative resist phenomenon due to the bond formation to build longer-chain polymer molecules which decrease the dissolution rate in the appropriate developer compared to that of the unexposed molecules. Preoptimized LB films at the various conditions exhibit 120 nm line resolution.