Julian Klein

Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures

We report the observation of a doublet structure in the low-temperature photoluminescence of interlayer excitons in heterostructures consisting of monolayer MoSe2 and WSe2. Both peaks exhibit long photoluminescence lifetimes of several tens of nanoseconds up to 100 ns verifying the interlayer nature of the excitons. The energy and line width of both peaks show unusual temperature and power dependences. While the low-energy peak dominates the spectra at low power and low temperatures, the high-energy peak dominates for high power and temperature. We explain the findings by two kinds of interlayer excitons being either indirect or quasi-direct in reciprocal space. Our results provide fundamental insights into long-lived interlayer states in van der Waals heterostructures with possible bosonic many-body interactions.

Stark Effect Spectroscopy of Mono- and Few-Layer MoS2

We demonstrate electrical control of the A-exciton interband transition in mono- and few-layer MoS2 crystals embedded into photocapacitor devices via the DC Stark effect. Electric field-dependent low-temperature photoluminescence spectroscopy reveals a significant tuneability of the A-exciton transition energy up to ∼ 16 meV from which we extract the mean DC exciton polarizability ⟨β̅N⟩ = (0.58 ± 0.25) × 10(-8) Dm V(-1). The exciton polarizability is shown to be layer-independent, indicating a strong localization of both electron and hole wave functions in each individual layer.

Tuning the optical emission of MoS2 nanosheets using proximal photoswitchable azobenzene molecules

We report photoluminescence measurements performed on monolayer- and two-layer-MoS2 placed on two types of mixed self-assembled monolayers (mSAMs) of photoswitchable azobenzene molecules. The two mSAMs differ via the electronegative character of the azobenzene derivatives. Thin layers of a transition metal dichalcogenide—MoS2—were mechanically exfoliated on mSAM to allow for direct interaction between the molecules and the MoS2 layers. When the MoS2 nanosheet is in contact with the electropositive azobenzene molecules in trans configuration, an emission side band at lower energies and at low excitation powers suggest n-type doping. The photoisomerization of the molecules from trans to cis configuration lowers the doping, quenching the side band and enhancing the overall PL efficiency by a factor of ∼3. Opposite results were observed with the chlorinated, more electronegative molecules, exhibiting a reversed trend in the PL efficiency between trans and cis, but with an overall larger intensity. The type of...

Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe2, WSe2 and MoS2 by encapsulation within few nanometre thick hBN. Encapsulation is shown to result in a significant reduction of the 10 K excitonic linewidths down to ∼3.5 meV for n-MoSe2, ∼5.0  meV for p-WSe2 and ∼4.8 meV for n-MoS2. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS2 shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials. Our findings suggest that encapsulation of mechanically exfoliated few-monolayer TMDCs within nanometre thick hBN dramatically enhances optical quality, producing ultra-narrow linewidths that approach the homogeneous limit.

The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures

The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer, the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric heteromultilayered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. An analytic treatment is used to provide further insight into how the interlayer gap influences different excitonic transitions. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances and shed light on the effect of temperature annealing.

Electric-Field Switchable Second-Harmonic Generation in Bilayer MoS2 by Inversion Symmetry Breaking

We demonstrate pronounced electric-field-induced second-harmonic generation in naturally inversion symmetric 2H stacked bilayer MoS2 embedded into microcapacitor devices. By applying strong external electric field perturbations (|F| = ±2.6 MV cm-1) perpendicular to the basal plane of the crystal, we control the inversion symmetry breaking and, hereby, tune the nonlinear conversion efficiency. Strong tunability of the nonlinear response is observed throughout the energy range (Eω ∼ 1.25-1.47 eV) probed by measuring the second-harmonic response at E2ω, spectrally detuned from both the A- and B-exciton resonances. A 60-fold enhancement of the second-order nonlinear signal is obtained for emission at E2ω = 2.49 eV, energetically detuned by ΔE = E2ω - EC = -0.26 eV from the C-resonance (EC = 2.75 eV). The pronounced spectral dependence of the electric-field-induced second-harmonic generation signal reflects the bandstructure and wave function admixture and exhibits particularly strong tunability below the C-resonance, in good agreement with density functional theory calculations. Moreover, we show that the field-induced second-harmonic generation relies on the interlayer coupling in the bilayer. Our findings strongly suggest that the strong tunability of the electric-field-induced second-harmonic generation signal in bilayer transition metal dichalcogenides may find applications in miniaturized electrically switchable nonlinear devices.

Robust valley polarization of helium ion modified atomically thin MoS2

Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardement affects the intrinsic vibrational, luminescence and valleytronic properties of atomically thin MoS 2 . By probing the disorder dependent vibrational response we deduce the interdefect distance by applying a phonon confinement model. We show that the increasing interdefect distance correlates with disorder-related luminscence arising 180 meV below the neutral exciton emission. We perform ab-initio density functional theory of a variety of defect related morphologies, which yield first indications on the origin of the observed additional luminescence. Remarkably, no significant reduction of free exciton valley polarization is observed until the interdefect distance approaches a few nanometers, namely the size of the free exciton Bohr radius. Our findings pave the way for direct writing of sub-10 nm nanoscale valleytronic devices and circuits using focused helium ions.

Phonon Interaction and Phase Transition in Single Formamidinium Lead Bromide Quantum Dots

Formamidinium lead bromide (FAPbBr3) quantum dots (QDs) are promising materials for light emitting applications in the visible spectral region because of their high photoluminescence (PL) quantum yield (QY) and the enhanced chemical stability as compared to, for instance, methylammonium based analogues. Toward practical harnessing of their compelling optical characteristics, the exciton recombination process, and in particular the exciton-phonon interaction and the impact of crystal phase transition, has to be understood in detail. This is addressed in this contribution by PL studies on single colloidal FAPbBr3 QDs. Polarization-resolved PL measurements reveal a fine structure splitting of excitonic transitions due to the Rashba effect. Distinct phonon replica have been observed within energetic distances of 4.3 ± 0.5, 8.6 ± 0.9, and 13.2 ± 1.1 meV from the zero phonon line, which we attribute to vibrational modes of the lead bromide lattice. Additional vibrational modes of 18.6 ± 0.3 and 38.8 ± 1.1 meV are found and related to liberation modes of the formamidinium (FA) cation. Temperature-dependent PL spectra reveal a line broadening of the emission caused by exciton phonon interaction as well an unusual energy shift which is attributed to a crystal phase transition within the single QD.