Julie S. Lee

Characterization of large cadmium zinc telluride crystals grown by traveling heater method

The focus of this paper is to evaluate thick, 20×20×10 and 10×10×10mm3, cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these crystals indicate that the THM is suitable for the mass production of CZT radiation detectors that can be used in a variety of applications. Our result also proves that with careful material selection using IR and high-quality fabrication processes, the theoretical energy resolution limit can be achieved.

Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe

Gamma-ray spectroscopy is a valuable tool of science and technology. Many applications for this tool are in need of a detector technology capable of achieving excellent energy resolution and efficient detection while operating at room temperature. Detectors based on the material cadmium zinc telluride (CdZnTe) could potentially meet this need if certain material deficiencies are addressed. The coplanar-grid as well as other electron-only detection techniques are effective in overcoming some of the material problems of CdZnTe and, consequently, have led to efficient gamma-ray detectors with good energy resolution while operating at room temperature. At the present time, the performance of these detectors is limited mainly by the degree of uniformity in electron generation and transport. Despite recent progress in the growth of CdZnTe material, small variations in these properties remain a barrier to the widespread success of such detectors. Alpha-particle response characterization of CdZnTe crystals fabric...

Evaluation of THM-Grown CdZnTe Material for Large-Volume Gamma-Ray Detector Applications

Over 25 1-cm3 CdZnTe crystals produced using the Traveling Heater Method at Redlen Technologies have been characterized. The charge carrier mobility and lifetime, and charge carrier transport uniformity of each crystal were measured using alpha particles. Some of the crystals were made into coplanar-grid detectors and their performance characterized using 662 keV gamma rays. The average electron mobility-lifetime product for these crystals was found to be a factor of about five times greater than that measured from crystals obtained over the last decade from two other commercial crystal growers. The coplanar-grid detectors produced from the material typically achieved an energy resolution at 662 keV near 2% FWHM when operated at room temperature. This is comparable to the best coplanar-grid detectors commercially produced today.

Proton radiation damage in p-channel CCDs fabricated on high- resistivity silicon

P-channel backside illuminated silicon charge-coupled devices (CCDs) were developed and fabricated on high-resistivity n-type silicon. The devices have been exposed up to 1 /spl times/ 10/sup 11/ protons/cm/sup 2/ at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for space missions of long duration.

Factors affecting energy resolution of coplanar-grid CdZnTe detectors

Coplanar-grid CdZnTe detectors have been under development for the past 10 years as room-temperature gamma-ray spectrometers, and they are being produced for use in a number of applications. Despite the improvements in detector active volume and spectral response that have been achieved with the coplanar-grid technique, the full potential of such detectors is still far from being realized. There exist a number of material, device, and electronics factors that limit detector performance and yield. Some of the major factors are identified and examined in terms of their origins and the magnitude of their effects on energy resolution.

Spectral Response of THM Grown CdZnTe Crystals

The spectral response of several crystals grown by the Traveling Heater Method (THM) were investigated. An energy resolution of 0.98% for a Pseudo Frisch-Grid of 4 times 4 times 9 mm3 and 2.1% FWHM for a coplanar-grid of size 11 times 11 times 5 mm3 were measured using 137Cs-662 keV. In addition a 4% FWHM at 122 keV has also been measured on 20 times 20 X 5 mm3 monolithic pixellated devices. The material shows great potential toward producing large-volume detectors with spectral performance that meets the requirement for high-resolution gamma-ray spectroscopy.

Proton radiation damage in high-resistivity n-type silicon CCDs

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1 X 1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.

Noise in CdZnTe detectors

Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping.

Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

A 3-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented.

Alpha particle response characterization of CdZnTe

The coplanar-grid as well as other electron-only detection techniques are effective in overcoming some of the material problems of CdZnTe and, consequently, have led to efficient gamma-ray detectors with good energy resolution while operating at room temperature. The performance of these detectors is limited by the degree of uniformity in both electron generation and transport. Despite recent progress in the growth of CdZnTe material, small variations in these properties remain a barrier to the widespread success of such detectors. Alpha-particle response characterization of CdZnTe crystals fabricated into simple planar detectors is an effective tool to accurately study electron generation and transport. We have used a finely collimated alpha source to produce two-dimensional maps of detector response. A clear correlation has been observed between the distribution of precipitates near the entrance contact on some crystals and their alpha-response maps. Further studies are ongoing to determine the mechanism for the observed response variations and the reason for the correlation. This paper presents the results of these studies and their relationship to coplanar-grid gamma-ray detector performance.