Julien Stodolna

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Abstract GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-nitride alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This alloy displays efficient photoluminescence at room temperature and good light absorption. An early-stage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I–V curve show that carriers have been extracted from the GaAsPN alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.

Abrupt GaP/Si hetero-interface using bistepped Si buffer

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

Antiphase domain tailoring for combination of modal and 4¯ -quasi-phase matching in gallium phosphide microdisks

We propose a novel phase-matching scheme in GaP whispering-gallery-mode microdisks grown on Si substrate combining modal and 4¯ -quasi-phase-matching for second-harmonic-generation. The technique consists in unlocking parity-forbidden processes by tailoring the antiphase domain distribution in the GaP layer. Our proposal can be used to overcome the limitations of form birefringence phase-matching and 4¯ -quasi-phase-matching using high order whispering-gallery-modes. The high frequency conversion efficiency of this new scheme demonstrates the competitiveness of nonlinear photonic devices monolithically integrated on silicon.

Impact of antiphase boundaries on non-linear frequency conversion in GaP/Si microdisks

GaP is a promising candidate for the development of highly integrated photonic functions on silicon, because of its quasi lattice-matching with Si and its interesting χ(2) non-linear properties. We here present the realization of GaP-based microdisks on Si substrates, and discuss their optical properties. Especially, emphasis is given on the impact of crystal antiphase boundaries generated during the heteroepitaxial growth on second-harmonic generation.