Jun-Hwan Shin

InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner.

We present a terahertz (THz) broadband antenna-integrated 1 × 20 InGaAs Schottky barrier diode (SBD) array detector with an average responsivity of 98.5 V/W at a frequency of 250 GHz, which is measured without attaching external amplifiers and Si lenses, and an average noise equivalent power (NEP) of 106.6 pW/√Hz. The 3-dB bandwidth of the SBD detector is also investigated at approximately 180 GHz. For implementing an array-type SBD detector by a simple fabrication process to achieve a high yield, a structure comprising an SiN(x) layer instead of an air bridge between the anode and the cathode is designed. THz line beam imaging using a Gunn diode emitter with a center frequency of 250 GHz and a 1 × 20 SBD array detector is successfully demonstrated.

Compact fiber-pigtailed InGaAs photoconductive antenna module for terahertz-wave generation and detection

We propose a compact fiber-pigtailed InGaAs photoconductive antenna (FPP) module having an effective heat-dissipation solution as well as a module volume of less than 0.7 cc. The heat-dissipation of the FPP modules when using a heat-conductive printed circuit board (PCB) and an aluminium nitride (AlN) submount, without any cooling systems, improve by 40% and 85%, respectively, when compared with a photoconductive antenna chip on a conventional PCB. The AlN submount is superior to those previously reported as a heat-dissipation solution. Terahertz time-domain spectroscopy (THz-TDS) using the FPP module perfectly detects the absorption lines of water vapor in free space and an α-lactose sample.

Bias field tailored plasmonic nano-electrode for high-power terahertz photonic devices.

Photoconductive antennas with nano-structured electrodes and which show significantly improved performances have been proposed to satisfy the demand for compact and efficient terahertz (THz) sources. Plasmonic field enhancement was previously considered the dominant mechanism accounting for the improvements in the underlying physics. However, we discovered that the role of plasmonic field enhancement is limited and near-field distribution of bias field should be considered as well. In this paper, we clearly show that the locally enhanced bias field due to the size effect is much more important than the plasmonic enhanced absorption in the nano-structured electrodes for the THz emitters. Consequently, an improved nano-electrode design is presented by tailoring bias field distribution and plasmonic enhancement. Our findings will pave the way for new perspectives in the design and analysis of plasmonic nano-structures for more efficient THz photonic devices.

Metal-VO2 hybrid grating structure for a terahertz active switchable linear polarizer

An active terahertz (THz) wave hybrid grating structure of Au/Ti metallic grating on VO2/Al2O3 (0001) was fabricated and evaluated. In our structure, it is shown that the metallic gratings on the VO2 layer strengthen the metallic characteristics to enhance the contrast of the metallic and dielectric phases of a VO2-based device. Especially, the metal grating-induced optical conductivity of the device is greatly enhanced, three times more than that of a metallic phase of bare VO2 films in the 0.1-2.0 THz spectral range. As an illustrative example, we fabricated an actively on/off switchable THz linear polarizer. The fabricated device has shown commercially comparable values in degree of polarization (DOP) and extinction ratio (ER). A high value of 0.89 in the modulation depth (MD) for the transmission field amplitude, superior to other THz wave modulators, is achieved. The experimental results show that the fabricated device can be highly useful in many applications, including active THz linear polarizers, THz wave modulators and variable THz attenuators.

Continuous-wave terahertz system based on a dual-mode laser for real-time non-contact measurement of thickness and conductivity

Terahertz (THz) waves have been exploited for the non-contact measurements of thickness and refractive index, which has enormous industrial applicability. In this work, we demonstrate a 1.3-μm dual-mode laser (DML)-based continuous-wave THz system for the real-time measurement of a commercial indium-tin-oxide (ITO)-coated glass. The system is compact, cost-effective, and capable of performing broadband measurement within a second at the setting resolution of 1 GHz. The thickness of the glass and the sheet conductivity of the ITO film were successfully measured, and the measurements agree well with those of broadband pulse-based time domain spectroscopy and Hall measurement results.

Electrically controllable terahertz square-loop metamaterial based on VO2 thin film

An electrically controllable square-loop metamaterial based on vanadium dioxide (VO2) thin film was proposed in the terahertz frequency regime. The square-loop shaped metamaterial was adopted to perform roles not only as a resonator but also as a micro-heater for the electrical control of the VO2. A dual-resonant square-loop structure was designed to realize band-pass characteristics in the desired frequency band. The measured Q-factors of the basic and scaled-down metamaterials fabricated on VO2 thin films were 2.22 and 1.61 at the center frequencies of 0.44 and 1.14 THz in the passbands, respectively. The transmittances of the proposed metamaterial were successfully controlled by applying a bias voltage without an external heater. The measured transmittance on-off ratios of the metamaterials were over 40 at the center frequencies in the passbands. In the future, electrically controllable terahertz metamaterial based on VO2 metamaterial could be employed as high-performance active filters or sensors.

Widely tunable detuned dual-mode multisection laser diode for continuous-wave THz generation

We demonstrate novel detuned dual-mode laser for tunable continuous-wave terahertz generation with InGaAs-based photomixers. The beat frequency from this dual-mode multisection laser is continuously tuned from 0.30 to over 1.15 THz.

μ-Heater integrated dual-mode multisection laser for tunable continuous-wave terahertz generation

We report on a novel micro-heater integrated dual mode multisection laser as a optical beat source for tunable continuous-wave THz generation. The beat frequency from this dual-mode multisection laser is continuously tuned from 0.10 to 0.57 THz.

Terahertz rectifier exploiting electric field-induced hot-carrier effect in asymmetric nano-electrode

Rectifiers have been used to detect electromagnetic waves with very low photon energies. In these rectifying devices, different methods have been utilized, such as adjusting the bandgap and the doping profile, or utilizing the contact potential of the metal-semiconductor junction to produce current flow depending on the direction of the electric field. In this paper, it is shown that the asymmetric application of nano-electrodes to a metal-semiconductor-metal (MSM) structure can produce such rectification characteristics, and a terahertz (THz) wave detector based on the nano-MSM structure is proposed. Integrated with a receiving antenna, the fabricated device detects THz radiation up to a frequency of 1.5 THz with responsivity and noise equivalent power of 10.8 V/W and [Formula: see text] respectively, estimated at 0.3 THz. The unidirectional current flow is attributed to the thermionic emission of hot carriers accelerated by the locally enhanced THz field at the sharp end of the nano-electrode. This work not only demonstrates a new type of THz detector but also proposes a method for manipulating ultrafast charge-carrier dynamics through the field enhancement of the nano-electrode, which can be applied to ultrafast photonic and electronic devices.

Subterahertz electromagnetic wave generation in a randomly networked single-walled carbon nanotubes photoconductive switch

We demonstrated an electromagnetic (EM) wave generation that reaches up to 250 GHz in the photoconductive switch based on randomly networked single-walled carbon nanotubes (SWNTs). Furthermore, we investigated the bias dependence of the electromagnetic wave amplitudes. This subterahertz radiation is generated by the acceleration of photogenerated carriers through fluctuation-induced tunneling in single-walled carbon nanotube bundles. Below the bias field of 20 kV/cm, the signal was enhanced with an increase in the bias field. However, the signal amplitudes decreased above 20 kV/cm due to emerging space-charge accumulation and scattering effect occurring at the defects and contact points.