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Dive into the research topics where Jung-Hun Noh is active.

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Featured researches published by Jung-Hun Noh.


Advanced Materials | 2010

Fully Flexible Solution‐Deposited ZnO Thin‐Film Transistors

Keunkyu Song; Jung-Hun Noh; Taehwan Jun; Yangho Jung; Hae-Yoon Kang; Jooho Moon

Electronic systems on fl exible substrates posses the advantage of mechanical fl exibility in actual use, but also provide more rugged rollable devices and may therefore result in lower manufacturing costs associated with continuous roll-to-roll fabrication. To realize these advantages of fl exible electronics, lowtemperature solution processing is strongly desirable. In this regard, organic semiconductor materials have been extensively researched. [ 1 ] Organic semiconductor polymers are soluble in a variety of solvents, and small molecules can be derivatized to soluble precursors. Organic transistors can also be fabricated by solution processing near room temperature, [ 2 ] compatible with temperature-sensitive plastic substrates. [ 3–5 ] Despite successful demonstrations of fl exible organic electronics, however, they are generally sensitive to operating conditions and are unstable during long-term operation. [ 6 ]


Japanese Journal of Applied Physics | 2010

Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic–Inorganic Hybrid Dielectrics

Keun-Kyu Song; Youngmin Jeong; Taewhan Jun; Chang Young Koo; Dongjo Kim; Kyoohee Woo; Areum Kim; Jung-Hun Noh; Seongwhan Cho; Jooho Moon

We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol–gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic–inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of <10-10 A, a field-effect mobility of 3.3×10-2 cm2 V-1 s-1, and a low threshold gate voltage of ~2.4 V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (~90%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.


Archive | 2009

Display substrate method of manufacturing the same

Jung-Hun Noh; Myung-Hwan Kim; Seung-Hwan Cho


Archive | 2009

FLEXIBLE SUBSTRATE, METHOD OF MANUFACTURING DISPLAY SUBSTRATE, AND METHOD OF MANUFACTURING DISPLAY PANEL

Myung-Hwan Kim; Nam-Seok Roh; Sang-Il Kim; Woo-Jae Lee; Jung-Hun Noh


Archive | 2008

THIN FILM TRANSISTOR ARRAY PANEL, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE WITH THE SAME

Seung-Hwan Cho; Bo-Sung Kim; Keun Kyu Song; Jung-Hun Noh


Archive | 2010

Thin film transistor array panel and manufacture thereof

Seung-Hwan Cho; Bo-Sung Kim; Keun-Kyu Song; Tae-Young Choi; Jung-Hun Noh


SID Symposium Digest of Technical Papers | 2017

28-4L: Late-News Paper: An Ultra High Density 1.96”UHD 2250ppi Display

Hyun Sup Lee; Sang-Hee Jang; Jung-Hun Noh; Hyungll Jeon; Byungseok Choi; Yeon Mun Jeon; Keun-Kyu Song; Junho Song; Hye Yong Chu; Sungchul Kim


Archive | 2010

Manufacturing method of flat panel display

Myung-Hwan Kim; Dae-Jin Park; Jung-Hun Noh


Archive | 2009

APPARATUS AND METHOD OF MANUFACTURING THE SAME

Myung-Hwan Kim; Nam-Seok Roh; Woo-Jae Lee; Jung-Hun Noh


Archive | 2008

Making organic thin film transistor substrates for display devices

Keun-Kyu Song; Jung-Han Shin; Bo-Sung Kim; Seon-Pil Jang; Seung-Hwan Cho; Min-Ho Yoon; Jung-Hun Noh

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