Jung-Hun Noh
Samsung
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Featured researches published by Jung-Hun Noh.
Advanced Materials | 2010
Keunkyu Song; Jung-Hun Noh; Taehwan Jun; Yangho Jung; Hae-Yoon Kang; Jooho Moon
Electronic systems on fl exible substrates posses the advantage of mechanical fl exibility in actual use, but also provide more rugged rollable devices and may therefore result in lower manufacturing costs associated with continuous roll-to-roll fabrication. To realize these advantages of fl exible electronics, lowtemperature solution processing is strongly desirable. In this regard, organic semiconductor materials have been extensively researched. [ 1 ] Organic semiconductor polymers are soluble in a variety of solvents, and small molecules can be derivatized to soluble precursors. Organic transistors can also be fabricated by solution processing near room temperature, [ 2 ] compatible with temperature-sensitive plastic substrates. [ 3–5 ] Despite successful demonstrations of fl exible organic electronics, however, they are generally sensitive to operating conditions and are unstable during long-term operation. [ 6 ]
Japanese Journal of Applied Physics | 2010
Keun-Kyu Song; Youngmin Jeong; Taewhan Jun; Chang Young Koo; Dongjo Kim; Kyoohee Woo; Areum Kim; Jung-Hun Noh; Seongwhan Cho; Jooho Moon
We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol–gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic–inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of <10-10 A, a field-effect mobility of 3.3×10-2 cm2 V-1 s-1, and a low threshold gate voltage of ~2.4 V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (~90%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.
Archive | 2009
Jung-Hun Noh; Myung-Hwan Kim; Seung-Hwan Cho
Archive | 2009
Myung-Hwan Kim; Nam-Seok Roh; Sang-Il Kim; Woo-Jae Lee; Jung-Hun Noh
Archive | 2008
Seung-Hwan Cho; Bo-Sung Kim; Keun Kyu Song; Jung-Hun Noh
Archive | 2010
Seung-Hwan Cho; Bo-Sung Kim; Keun-Kyu Song; Tae-Young Choi; Jung-Hun Noh
SID Symposium Digest of Technical Papers | 2017
Hyun Sup Lee; Sang-Hee Jang; Jung-Hun Noh; Hyungll Jeon; Byungseok Choi; Yeon Mun Jeon; Keun-Kyu Song; Junho Song; Hye Yong Chu; Sungchul Kim
Archive | 2010
Myung-Hwan Kim; Dae-Jin Park; Jung-Hun Noh
Archive | 2009
Myung-Hwan Kim; Nam-Seok Roh; Woo-Jae Lee; Jung-Hun Noh
Archive | 2008
Keun-Kyu Song; Jung-Han Shin; Bo-Sung Kim; Seon-Pil Jang; Seung-Hwan Cho; Min-Ho Yoon; Jung-Hun Noh