Junghyung Pyo

Crosstalk Reduction in a Shallow-Etched Silicon Nanowire AWG

We introduced shallow-etched silicon nanowire into the arrayed waveguides to decrease the random phase error due to the core width fluctuation. A fairly improved crosstalk value of 18 dB was achieved in the fabricated arrayed-waveguide grating with the on-chip loss of 3 dB.

Crosstalk reduction of silicon nanowire AWG with shallow-etched grating arms

The grating arms composed of silicon nanowires were shallow-etched to reduce the random phase error caused by the core width fluctuation. A fairly improved crosstalk value of 18 dB was achieved in the arrayed-waveguide grating with the on-chip loss of 3 dB.

Temperature-Insensitive Silicon Nano-Wire Ring Resonator

We present a silicon nano-wire ring resonator with a temperature-dependent wavelength shift as low as 0.006 nm/degC by adjusting the mode volume of a SOl-based silicon waveguide covered with a polymeric material.

Center wavelength uniformity of shallow-etched silicon photonic wire AWG

We have fabricated a WDM device consisting of two or three shallow-etched AWGs on 5-inch SOI wafer. The center wavelength difference between the closely located AWGs was smaller than 1 nm. Meanwhile, the center wavelength deviation over the whole wafer was larger than 5 nm.