Justin Meza

Row buffer locality aware caching policies for hybrid memories

Phase change memory (PCM) is a promising technology that can offer higher capacity than DRAM. Unfortunately, PCMs access latency and energy are higher than DRAMs and its endurance is lower. Many DRAM-PCM hybrid memory systems use DRAM as a cache to PCM, to achieve the low access latency and energy, and high endurance of DRAM, while taking advantage of PCMs large capacity. A key question is what data to cache in DRAM to best exploit the advantages of each technology while avoiding its disadvantages as much as possible. We propose a new caching policy that improves hybrid memory performance and energy efficiency. Our observation is that both DRAM and PCM banks employ row buffers that act as a cache for the most recently accessed memory row. Accesses that are row buffer hits incur similar latencies (and energy consumption) in DRAM and PCM, whereas accesses that are row buffer misses incur longer latencies (and higher energy consumption) in PCM. To exploit this, we devise a policy that avoids accessing in PCM data that frequently causes row buffer misses because such accesses are costly in terms of both latency and energy. Our policy tracks the row buffer miss counts of recently used rows in PCM, and caches in DRAM the rows that are predicted to incur frequent row buffer misses. Our proposed caching policy also takes into account the high write latencies of PCM, in addition to row buffer locality. Compared to a conventional DRAM-PCM hybrid memory system, our row buffer locality-aware caching policy improves system performance by 14% and energy efficiency by 10% on data-intensive server and cloud-type workloads. The proposed policy achieves 31% performance gain over an all-PCM memory system, and comes within 29% of the performance of an allDRAM memory system (not taking PCMs capacity benefit into account) on evaluated workloads.

Enabling Efficient and Scalable Hybrid Memories Using Fine-Granularity DRAM Cache Management

Hybrid main memories composed of DRAM as a cache to scalable non-volatile memories such as phase-change memory (PCM) can provide much larger storage capacity than traditional main memories. A key challenge for enabling high-performance and scalable hybrid memories, though, is efficiently managing the metadata (e.g., tags) for data cached in DRAM at a fine granularity. Based on the observation that storing metadata off-chip in the same row as their data exploits DRAM row buffer locality, this paper reduces the overhead of fine-granularity DRAM caches by only caching the metadata for recently accessed rows on-chip using a small buffer. Leveraging the flexibility and efficiency of such a fine-granularity DRAM cache, we also develop an adaptive policy to choose the best granularity when migrating data into DRAM. On a hybrid memory with a 512MB DRAM cache, our proposal using an 8KB on-chip buffer can achieve within 6% of the performance of, and 18% better energy efficiency than, a conventional 8MB SRAM metadata store, even when the energy overhead due to large SRAM metadata storage is not considered.

Characterizing Application Memory Error Vulnerability to Optimize Datacenter Cost via Heterogeneous-Reliability Memory

Memory devices represent a key component of datacenter total cost of ownership (TCO), and techniques used to reduce errors that occur on these devices increase this cost. Existing approaches to providing reliability for memory devices pessimistically treat all data as equally vulnerable to memory errors. Our key insight is that there exists a diverse spectrum of tolerance to memory errors in new data-intensive applications, and that traditional one-size-fits-all memory reliability techniques are inefficient in terms of cost. For example, we found that while traditional error protection increases memory system cost by 12.5%, some applications can achieve 99.00% availability on a single server with a large number of memory errors without any error protection. This presents an opportunity to greatly reduce server hardware cost by provisioning the right amount of memory reliability for different applications. Toward this end, in this paper, we make three main contributions to enable highly-reliable servers at low datacenter cost. First, we develop a new methodology to quantify the tolerance of applications to memory errors. Second, using our methodology, we perform a case study of three new dataintensive workloads (an interactive web search application, an in-memory key -- value store, and a graph mining framework) to identify new insights into the nature of application memory error vulnerability. Third, based on our insights, we propose several new hardware/software heterogeneous-reliability memory system designs to lower datacenter cost while achieving high reliability and discuss their trade-off. We show that our new techniques can reduce server hardware cost by 4.7% while achieving 99.90% single server availability.

A Large-Scale Study of Flash Memory Failures in the Field

Servers use flash memory based solid state drives (SSDs) as a high-performance alternative to hard disk drives to store persistent data. Unfortunately, recent increases in flash density have also brought about decreases in chip-level reliability. In a data center environment, flash-based SSD failures can lead to downtime and, in the worst case, data loss. As a result, it is important to understand flash memory reliability characteristics over flash lifetime in a realistic production data center environment running modern applications and system software. This paper presents the first large-scale study of flash-based SSD reliability in the field. We analyze data collected across a majority of flash-based solid state drives at Facebook data centers over nearly four years and many millions of operational hours in order to understand failure properties and trends of flash-based SSDs. Our study considers a variety of SSD characteristics, including: the amount of data written to and read from flash chips; how data is mapped within the SSD address space; the amount of data copied, erased, and discarded by the flash controller; and flash board temperature and bus power. Based on our field analysis of how flash memory errors manifest when running modern workloads on modern SSDs, this paper is the first to make several major observations: (1) SSD failure rates do not increase monotonically with flash chip wear; instead they go through several distinct periods corresponding to how failures emerge and are subsequently detected, (2) the effects of read disturbance errors are not prevalent in the field, (3) sparse logical data layout across an SSDs physical address space (e.g., non-contiguous data), as measured by the amount of metadata required to track logical address translations stored in an SSD-internal DRAM buffer, can greatly affect SSD failure rate, (4) higher temperatures lead to higher failure rates, but techniques that throttle SSD operation appear to greatly reduce the negative reliability impact of higher temperatures, and (5) data written by the operating system to flash-based SSDs does not always accurately indicate the amount of wear induced on flash cells due to optimizations in the SSD controller and buffering employed in the system software. We hope that the findings of this first large-scale flash memory reliability study can inspire others to develop other publicly-available analyses and novel flash reliability solutions.

Revisiting Memory Errors in Large-Scale Production Data Centers: Analysis and Modeling of New Trends from the Field

Computing systems use dynamic random-access memory (DRAM) as main memory. As prior works have shown, failures in DRAM devices are an important source of errors in modern servers. To reduce the effects of memory errors, error correcting codes (ECC) have been developed to help detect and correct errors when they occur. In order to develop effective techniques, including new ECC mechanisms, to combat memory errors, it is important to understand the memory reliability trends in modern systems. In this paper, we analyze the memory errors in the entire fleet of servers at Facebook over the course of fourteen months, representing billions of device days. The systems we examine cover a wide range of devices commonly used in modern servers, with DIMMs manufactured by 4 vendors in capacities ranging from 2 GB to 24 GB that use the modern DDR3 communication protocol. We observe several new reliability trends for memory systems that have not been discussed before in literature. We show that (1) memory errors follow a power-law, specifically, a Pareto distribution with decreasing hazard rate, with average error rate exceeding median error rate by around 55×, (2) non-DRAM memory failures from the memory controller and memory channel cause the majority of errors, and the hardware and software overheads to handle such errors cause a kind of denial of service attack in some servers, (3) using our detailed analysis, we provide the first evidence that more recent DRAM cell fabrication technologies (as indicated by chip density) have substantially higher failure rates, increasing by 1.8× over the previous generation, (4) DIMM architecture decisions affect memory reliability: DIMMs with fewer chips and lower transfer widths have the lowest error rates, likely due to electrical noise reduction, (5) while CPU and memory utilization do not show clear trends with respect to failure rates, workload type can influence failure rate by up to 6:5×, suggesting certain memory access patterns may induce more errors, (6) we develop a model for memory reliability and show how system design choices such as using lower density DIMMs and fewer cores per chip can reduce failure rates of a baseline server by up to 57.7%, and (7) we perform the first implementation and real-system analysis of page offlining at scale, showing that it can reduce memory error rate by 67%, and identify several real-world impediments to the technique.

Efficient Data Mapping and Buffering Techniques for Multilevel Cell Phase-Change Memories

New phase-change memory (PCM) devices have low-access latencies (like DRAM) and high capacities (i.e., low cost per bit, like Flash). In addition to being able to scale to smaller cell sizes than DRAM, a PCM cell can also store multiple bits per cell (referred to as multilevel cell, or MLC), enabling even greater capacity per bit. However, reading and writing the different bits of data from and to an MLC PCM cell requires different amounts of time: one bit is read or written first, followed by another. Due to this asymmetric access process, the bits in an MLC PCM cell have different access latency and energy depending on which bit in the cell is being read or written. We leverage this observation to design a new way to store and buffer data in MLC PCM devices. While traditional devices couple the bits in each cell next to one another in the address space, our key idea is to logically decouple the bits in each cell into two separate regions depending on their read/write characteristics: fast-read/slow-write bits and slow-read/fast-write bits. We propose a low-overhead hardware/software technique to predict and map data that would benefit from being in each region at runtime. In addition, we show how MLC bit decoupling provides more flexibility in the way data is buffered in the device, enabling more efficient use of existing device buffer space. Our evaluations for a multicore system show that MLC bit decoupling improves system performance by 19.2%, memory energy efficiency by 14.4%, and thread fairness by 19.3% over a state-of-the-art MLC PCM system that couples the bits in its cells. We show that our results are consistent across a variety of workloads and system configurations.

A case for small row buffers in non-volatile main memories

DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention in multi-core architectures and data mapping schemes that improve memory parallelism lead to only a small amount of the buffered data to be accessed. This makes buffering large amounts of data on every memory array access energy-inefficient; yet organizing DRAM chips to buffer small amounts of data is costly, as others have shown [11]. Emerging non-volatile memories (NVMs) such as PCM, STT-RAM, and RRAM, however, do not have destructive read operations, opening up opportunities for employing small row buffers without incurring additional area penalty and/or design complexity. In this work, we discuss and evaluate architectural changes to enable small row buffers at a low cost in NVMs. We find that on a multi-core system, reducing the row buffer size can greatly reduce main memory dynamic energy compared to a DRAM baseline with large row sizes, without greatly affecting endurance, and for some NVM technologies, leads to improved performance.