Yixin Luo

Computational sprinting

Although transistor density continues to increase, voltage scaling has stalled and thus power density is increasing each technology generation. Particularly in mobile devices, which have limited cooling options, these trends lead to a utilization wall in which sustained chip performance is limited primarily by power rather than area. However, many mobile applications do not demand sustained performance; rather they comprise short bursts of computation in response to sporadic user activity. To improve responsiveness for such applications, this paper explores activating otherwise powered-down cores for sub-second bursts of intense parallel computation. The approach exploits the concept of computational sprinting, in which a chip temporarily exceeds its sustainable thermal power budget to provide instantaneous throughput, after which the chip must return to nominal operation to cool down. To demonstrate the feasibility of this approach, we analyze the thermal and electrical characteristics of a smart-phone-like system that nominally operates a single core (~1W peak), but can sprint with up to 16 cores for hundreds of milliseconds. We describe a thermal design that incorporates phase-change materials to provide thermal capacitance to enable such sprints. We analyze image recognition kernels to show that parallel sprinting has the potential to achieve the task response time of a 16W chip within the thermal constraints of a 1W mobile platform.

RowClone: fast and energy-efficient in-DRAM bulk data copy and initialization

Several system-level operations trigger bulk data copy or initialization. Even though these bulk data operations do not require any computation, current systems transfer a large quantity of data back and forth on the memory channel to perform such operations. As a result, bulk data operations consume high latency, bandwidth, and energy — degrading both system performance and energy efficiency. In this work, we propose RowClone, a new and simple mechanism to perform bulk copy and initialization completely within DRAM — eliminating the need to transfer any data over the memory channel to perform such operations. Our key observation is that DRAM can internally and efficiently transfer a large quantity of data (multiple KBs) between a row of DRAM cells and the associated row buffer. Based on this, our primary mechanism can quickly copy an entire row of data from a source row to a destination row by first copying the data from the source row to the row buffer and then from the row buffer to the destination row, via two back-to-back activate commands. This mechanism, which we call the Fast Parallel Mode of RowClone, reduces the latency and energy consumption of a 4KB bulk copy operation by 11.6× and 74.4×, respectively, and a 4KB bulk zeroing operation by 6.0× and 41.5×, respectively. To efficiently copy data between rows that do not share a row buffer, we propose a second mode of RowClone, the Pipelined Serial Mode, which uses the shared internal bus of a DRAM chip to quickly copy data between two banks. RowClone requires only a 0.01% increase in DRAM chip area. We quantitatively evaluate the benefits of RowClone by focusing on fork, one of the frequently invoked system calls, and five other copy and initialization intensive applications. Our results show that RowClone can significantly improve both single-core and multi-core system performance, while also significantly reducing main memory bandwidth and energy consumption.

Characterizing Application Memory Error Vulnerability to Optimize Datacenter Cost via Heterogeneous-Reliability Memory

Memory devices represent a key component of datacenter total cost of ownership (TCO), and techniques used to reduce errors that occur on these devices increase this cost. Existing approaches to providing reliability for memory devices pessimistically treat all data as equally vulnerable to memory errors. Our key insight is that there exists a diverse spectrum of tolerance to memory errors in new data-intensive applications, and that traditional one-size-fits-all memory reliability techniques are inefficient in terms of cost. For example, we found that while traditional error protection increases memory system cost by 12.5%, some applications can achieve 99.00% availability on a single server with a large number of memory errors without any error protection. This presents an opportunity to greatly reduce server hardware cost by provisioning the right amount of memory reliability for different applications. Toward this end, in this paper, we make three main contributions to enable highly-reliable servers at low datacenter cost. First, we develop a new methodology to quantify the tolerance of applications to memory errors. Second, using our methodology, we perform a case study of three new dataintensive workloads (an interactive web search application, an in-memory key -- value store, and a graph mining framework) to identify new insights into the nature of application memory error vulnerability. Third, based on our insights, we propose several new hardware/software heterogeneous-reliability memory system designs to lower datacenter cost while achieving high reliability and discuss their trade-off. We show that our new techniques can reduce server hardware cost by 4.7% while achieving 99.90% single server availability.

Data retention in MLC NAND flash memory: Characterization, optimization, and recovery

Retention errors, caused by charge leakage over time, are the dominant source of flash memory errors. Understanding, characterizing, and reducing retention errors can significantly improve NAND flash memory reliability and endurance. In this paper, we first characterize, with real 2y-nm MLC NAND flash chips, how the threshold voltage distribution of flash memory changes with different retention age - the length of time since a flash cell was programmed. We observe from our characterization results that 1) the optimal read reference voltage of a flash cell, using which the data can be read with the lowest raw bit error rate (RBER), systematically changes with its retention age, and 2) different regions of flash memory can have different retention ages, and hence different optimal read reference voltages. Based on our findings, we propose two new techniques. First, Retention Optimized Reading (ROR) adaptively learns and applies the optimal read reference voltage for each flash memory block online. The key idea of ROR is to periodically learn a tight upper bound, and from there approach the optimal read reference voltage. Our evaluations show that ROR can extend flash memory lifetime by 64% and reduce average error correction latency by 10.1%, with only 768 KB storage overhead in flash memory for a 512 GB flash-based SSD. Second, Retention Failure Recovery (RFR) recovers data with uncorrectable errors offline by identifying and probabilistically correcting flash cells with retention errors. Our evaluation shows that RFR reduces RBER by 50%, which essentially doubles the error correction capability, and thus can effectively recover data from otherwise uncorrectable flash errors.

Read Disturb Errors in MLC NAND Flash Memory: Characterization, Mitigation, and Recovery

NAND flash memory reliability continues to degrade as the memory is scaled down and more bits are programmed per cell. A key contributor to this reduced reliability is read disturb, where a read to one row of cells impacts the threshold voltages of unread flash cells in different rows of the same block. Such disturbances may shift the threshold voltages of these unread cells to different logical states than originally programmed, leading to read errors that hurt endurance. For the first time in open literature, this paper experimentally characterizes read disturb errors on state-of-the-art 2Y-nm (i.e., 20-24 nm) MLC NAND flash memory chips. Our findings (1) correlate the magnitude of threshold voltage shifts with read operation counts, (2) demonstrate how program/erase cycle count and retention age affect the read-disturb-induced error rate, and (3) identify that lowering pass-through voltage levels reduces the impact of read disturb and extend flash lifetime. Particularly, we find that the probability of read disturb errors increases with both higher wear-out and higher pass-through voltage levels. We leverage these findings to develop two new techniques. The first technique mitigates read disturb errors by dynamically tuning the pass-through voltage on a per-block basis. Using real workload traces, our evaluations show that this technique increases flash memory endurance by an average of 21%. The second technique recovers from previously-uncorrectable flash errors by identifying and probabilistically correcting cells susceptible to read disturb errors. Our evaluations show that this recovery technique reduces the raw bit error rate by 36%.

WARM: Improving NAND flash memory lifetime with write-hotness aware retention management

Increased NAND flash memory density has come at the cost of lifetime reductions. Flash lifetime can be extended by relaxing internal data retention time, the duration for which a flash cell correctly holds data. Such relaxation cannot be exposed externally to avoid altering the expected data integrity property of a flash device. Reliability mechanisms, most prominently refresh, restore the duration of data integrity, but greatly reduce the lifetime improvements from retention time relaxation by performing a large number of write operations. We find that retention time relaxation can be achieved more efficiently by exploiting heterogeneity in write-hotness, i.e., the frequency at which each page is written. We propose WARM, a write-hotness aware retention management policy for flash memory, which identifies and physically groups together write-hot data within the flash device, allowing the flash controller to selectively perform retention time relaxation with little cost. When applied alone, WARM improves overall flash lifetime by an average of 3.24× over a conventional management policy without refresh, across a variety of real I/O workload traces. When WARM is applied together with an adaptive refresh mechanism, the average lifetime improves by 12.9×, 1.21× over adaptive refresh alone.

A case for unlimited watchpoints

Numerous tools have been proposed to help developers fix software errors and inefficiencies. Widely-used techniques such as memory checking suffer from overheads that limit their use to pre-deployment testing, while more advanced systems have such severe performance impacts that they may require special-purpose hardware. Previous works have described hardware that can accelerate individual analyses, but such specialization stymies adoption; generalized mechanisms are more likely to be added to commercial processors. This paper demonstrates that the ability to set an unlimited number of fine-grain data watchpoints can reduce the runtime overheads of numerous dynamic software analysis techniques. We detail the watchpoint capabilities required to accelerate these analyses while remaining general enough to be useful in the future. We describe a hardware design that stores watchpoints in main memory and utilizes two different on-chip caches to accelerate performance. The first is a bitmap lookaside buffer that stores fine-grained watchpoints, while the second is a range cache that can efficiently hold large contiguous regions of watchpoints. As an example of the power of such a system, it is possible to use watchpoints to accelerate read/write set checks in a software data race detector by nearly 9x.

Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives

NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: 1) effective process technology scaling; and 2) multi-level (e.g., MLC, TLC) cell data coding. Unfortunately, the reliability of raw data stored in flash memory has also continued to become more difficult to ensure, because these two trends lead to 1) fewer electrons in the flash memory cell floating gate to represent the data; and 2) larger cell-to-cell interference and disturbance effects. Without mitigation, worsening reliability can reduce the lifetime of NAND flash memory. As a result, flash memory controllers in solid-state drives (SSDs) have become much more sophisticated: they incorporate many effective techniques to ensure the correct interpretation of noisy data stored in flash memory cells. In this article, we review recent advances in SSD error characterization, mitigation, and data recovery techniques for reliability and lifetime improvement. We provide rigorous experimental data from state-of-the-art MLC and TLC NAND flash devices on various types of flash memory errors, to motivate the need for such techniques. Based on the understanding developed by the experimental characterization, we describe several mitigation and recovery techniques, including 1) cell-to-cell interference mitigation; 2) optimal multi-level cell sensing; 3) error correction using state-of-the-art algorithms and methods; and 4) data recovery when error correction fails. We quantify the reliability improvement provided by each of these techniques. Looking forward, we briefly discuss how flash memory and these techniques could evolve into the future.

Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques

Modern NAND flash memory chips provide high density by storing two bits of data in each flash cell, called a multi-level cell (MLC). An MLC partitions the threshold voltage range of a flash cell into four voltage states. When a flash cell is programmed, a high voltage is applied to the cell. Due to parasitic capacitance coupling between flash cells that are physically close to each other, flash cell programming can lead to cell-to-cell program interference, which introduces errors into neighboring flash cells. In order to reduce the impact of cell-to-cell interference on the reliability of MLC NAND flash memory, flash manufacturers adopt a two-step programming method, which programs the MLC in two separate steps. First, the flash memory partially programs the least significant bit of the MLC to some intermediate threshold voltage. Second, it programs the most significant bit to bring the MLC up to its full voltage state. In this paper, we demonstrate that two-step programming exposes new reliability and security vulnerabilities. We experimentally characterize the effects of two-step programming using contemporary 1X-nm (i.e., 15–19nm) flash memory chips. We find that a partially-programmed flash cell (i.e., a cell where the second programming step has not yet been performed) is much more vulnerable to cell-to-cell interference and read disturb than a fully-programmed cell. We show that it is possible to exploit these vulnerabilities on solid-state drives (SSDs) to alter the partially-programmed data, causing (potentially malicious) data corruption. Building on our experimental observations, we propose several new mechanisms for MLC NAND flash memory that eliminate or mitigate data corruption in partially-programmed cells, thereby removing or reducing the extent of the vulnerabilities, and at the same time increasing flash memory lifetime by 16%.

Enabling Accurate and Practical Online Flash Channel Modeling for Modern MLC NAND Flash Memory

NAND flash memory is a widely used storage medium that can be treated as a noisy channel. Each flash memory cell stores data as the threshold voltage of a floating gate transistor. The threshold voltage can shift as a result of various types of circuit-level noise, introducing errors when data are read from the channel and ultimately reducing flash lifetime. An accurate model of the threshold voltage distribution across flash cells can enable mechanisms within the flash controller that improve channel reliability and device lifetime. Unfortunately, existing threshold voltage distribution models are either not accurate enough or have high computational complexity, which makes them unsuitable for online implementation within the controller. We propose a new low-complexity flash memory model, built upon a modified version of the Students t-distribution and the power law, which captures the threshold voltage distribution and predicts future distribution shifts as wear increases. Using our experimental characterization of the state-of-the-art 1X-nm (i.e., 15-19 nm) multi-level cell NAND flash chips, we show that our model is highly accurate (with an average modeling error of 0.68%), and also simple to compute within the flash controller (requiring 4.41 times less computation time than the most accurate prior model, with negligible decrease in accuracy). Our model also predicts future threshold voltage distribution shifts with a 2.72% modeling error. We demonstrate several example applications of our model in the flash controller, which improve flash channel reliability significantly, including a new mechanism to predict the remaining lifetime of a flash device. Our evaluations for two of these applications show that our model: 1) helps improve flash memory lifetime by 48.9% and/or (2) enables the flash device to safely sustain 69.9% more write operations than manufacturer specifications. We hope and believe that the analyses and models developed in this paper can inspire other novel approaches to flash memory reliability and modeling.