K. Daoudi

Microstructural and electrical properties of La0.7Ca0.3MnO3 thin films grown on SrTiO3 and LaAlO3 substrates using metal-organic deposition

La0.7Ca0.3MnO3 (LCMO) thin films have been prepared on LaAlO3 and SrTiO3 (STO) (001) single-crystal substrates by the metal-organic deposition process. These films were characterized by transmission electron microscopy (TEM) and temperature dependence of the resistance R(T). The microstructure of the LCMO films and LCMO/substrate interfaces were investigated through cross-sectional TEM observations. High-resolution TEM (HRTEM) observations and electron-diffraction patterns demonstrate the (001) epitaxial growth on both the LAO and STO substrates. The local structure of the LCMO film depends on the type of substrate. HRTEM observations along the LCMO/STO interface display a good epitaxy throughout the entire film without any microstructural defects. On the contrary, in the LCMO film and in the region close to the LAO substrate, we note the presence of misfit dislocations and twins. The temperature coefficient of resistance (TCR) was calculated from the temperature dependence of the resistance measurements....

Large Temperature Coefficient of Resistance in La0.7Ca0.3MnO3 Thin Films Obtained by Metal Organic Deposition Process

La0.7Ca0.3MnO3 (LCMO) thin films with perovskite structure were successfully grown by metal-organic deposition (MOD) on LaAlO3 (001) substrates. The epitaxial growth of the films was confirmed by X-ray diffraction (θ-2θ scans and pole-figure analysis). The temperature coefficient of resistance (TCR) was calculated from the temperature dependence of the resistance measurements. The effects of annealing temperature and film thickness on the resistance and TCR were investigated. The LCMO thin films present a high resistivity-peak temperature of approximately 264 K. The LCMO thin films obtained by MOD show a maximum TCR of ~27.5%/K, and can be considered as good candidates for bolometric applications.

Transmission electron microscopy (TEM) studies of the epitaxial and polycrystalline Tin oxide films prepared by the excimer laser-assisted metal organic deposition

Epitaxial and polycrystalline SnO2 thin films were prepared by the excimer laser annealing of amorphous SnO2 films on TiO2 (001) and MgO (001) substrates. The amorphous SnO2 film was prepared by a metal organic deposition (MOD) using di-n-butylbis (2, 4-pentanedionate) tin at 300°C. The crystallinity and orientation of the product films were investigated by the XRDΘ—2Θ, pole figure and transmission electron microscopy (TEM) analyses. At 200 mJ/cm2, the (002) oriented SnO2 films were obtained by KrF laser irradiation. Using the XRD scanning measurement and TEM, it was found that the oriented SnO2 films were epitaxially grown on the (001) TiO2 substrate. On the other hand, the polycrystalline SnO2 film was obtained on the MgO (001) substrate. It was found that the grain size of the SnO2 film on the MgO substrate near the surface is larger than that of the near substrate based on crosssectional bright field TEM micrographs.

Electrical Properties of La0.7Ca0.3MnO3 Thin Films Obtained by Metal-Organic Deposition (MOD) using Excimer Laser and Thermal Annealing

Epitaxial La0.7Ca0.3MnO3 (LCMO) thin films were prepared by thermal and excimer laser (EL) metal-organic deposition (MOD). Using simple thermal annealing (STA) at 800–1000°C, the LCMO films were well epitaxially grown on single-crystalline SrTiO3 substrates. When, using a KrF or an ArF excimer laser irradiation, the LCMO films were also epitaxially grown at a substrate temperature of 500°C. The films produced by STA exhibited metal–insulator transition temperatures Tps ranging from 282 to 290 K while those obtained by EL irradiation had a Tp of approximately 205 K. For bolometric applications, the temperature coefficient of resistance (TCR) of the films was calculated. The LCMO films obtained by STA have a TCR of 8.5%/K at 228 K. On the other hand, using the EL irradiation, the TCR values are 5.8%/K at 165 K and 6.5%/K at 128 K for the KrF and ArF excimer lasers, respectively.

Transport mechanism through metal-cobaltite interfaces

The resistive switching (RS) properties as a function of temperature were studied for Ag/La

Epitaxial Growth of La0.7Ba0.3MnO3 Thin Films on SrTiO3 and LaAlO3 Substrates by Metal-Organic Deposition

_{1-x}

Spin transitions in La0.7 Ba0.3CoO3 thin films revealed by combining Raman spectroscopy and X-ray diffraction

Sr

Epitaxial Growth of LSMO Film Prepared by Excimer Laser-Assisted Metal Organic Deposition (ELAMOD)

_x

Preparation of the La0.8Sr0.2MnO3 films on STO and LAO substrates by excimer laser-assisted metal organic deposition using the KrF laser

CoO

Preparation of tin oxide films on various substrates by excimer laser metal organic deposition

_3