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Dive into the research topics where K.G. Deepa is active.

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Featured researches published by K.G. Deepa.


photovoltaic specialists conference | 2012

SnS quantum dot solar cells with Cu 2 S as counter electrode

K.G. Deepa; M. Anantha Sunil; J. Nagaraju

Different size SnS quantum dots are prepared by chemical bath deposition. size of the particles are varied from 2.4 to 14.4 nm by varying the deposition time from 30 to 120 min. solar cells are fabricated with these quantum dots. Cu2S coated FTO is used as counter electrode instead of the conventional platinum electrode and Na2S as electrolyte. Cu2S acts as a good catalyst for the polysulfide electrolyte. on comparing with a cell having platinum counter electrode and iodine based electrolyte, Cu2S -polysulfide combination found to improve both the short circuit current and fill factor of the solar cell.


photovoltaic specialists conference | 2012

Effect of sulphur variation in AgInS 2 thin films prepared by chemical spray pyrolysis

M. Anantha Sunil; K.G. Deepa; J. Nagaraju

AgInS<sub>2</sub> thin films are deposited by chemical spray pyrolysis technique. Aqueous solution of Silver Nitrate (AgNO<sub>3</sub>), Indium Chloride (InCl<sub>3</sub>), and Thiourea (CS (NH<sub>2</sub>)<sub>2</sub>) are used as the precursors and substrate temperature is kept at 3500C. Effect of variation in sulfur concentration was studied by varying the [S<sub>2-</sub>]/ [In<sup>3+</sup>] ratio. Orthorhombic structured AgInS<sub>2</sub> with preferred orientation along (0 0 2) plane is identified using XRD. Even though the crystallinity decreased with increase in sulfur concentration, Ag<sub>2</sub>O<sub>3</sub> phase which was observed in the sulfur poor sample was found to be disappeared for higher Sulfur concentration. EDAX data revealed nearly stoichiometric films for [S<sub>2-</sub>]/ [In<sup>3+</sup>] ratio 5, with atomic percentage of 26.69, 23.80, 49.81 for Ag, In, S respectively. SEM images show a gradual change from non-spherical to spherical grains with increase in sulfur concentration. Band gap measured was in the range 1.85 to 2.03 eV.


Thin Solid Films | 2014

Cu(In,Al)Se2 thin films by one-step electrodeposition for photovoltaics

K.G. Deepa; N. Lakshmi Shruthi; M. Anantha Sunil; J. Nagaraju


Thin Solid Films | 2014

Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique

M. Anantha Sunil; K.G. Deepa; J. Nagaraju


Journal of Analytical and Applied Pyrolysis | 2016

Development of an automated ultrasonic spray pyrolysis system and the growth of Cu2ZnSnS4 thin films

K.G. Deepa; Nagaraju Jampana


Journal of Analytical and Applied Pyrolysis | 2016

Tailoring the properties of Cu2ZnSnS4 thin films grown by ultrasonic spray pyrolysis

K.G. Deepa; Gauthaman Chandrabose; Nagaraju Jampana


Thin Solid Films | 2015

Sulfurization of sputtered Ag-In precursors for AgInS2 solar cell absorber layers

M. Anantha Sunil; Narayana Thota; K.G. Deepa; Nagaraju Jampana


Applied Surface Science | 2014

Low temperature sulfurization of electrodeposited Cu(In,Al)Se-2 thin films

N. Lakshmi Shruthi; K.G. Deepa; M. Anantha Sunil; J. Nagaraju


Surfaces and Interfaces | 2017

Nanocrystalline CuInSe2 thin films prepared using automatic film applicator

K.G. Deepa; Gauthaman Chandrabose; Nagaraju Jampana


Journal of Electronic Materials | 2018

Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis

K.G. Deepa; T. H. Sajeesh; Nagaraju Jampana

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M. Anantha Sunil

Indian Institute of Science

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Nagaraju Jampana

Indian Institute of Science

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J. Nagaraju

Indian Institute of Science

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N. Lakshmi Shruthi

Indian Institute of Science

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M Sunil Anantha

Indian Institute of Science

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