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Dive into the research topics where M. Anantha Sunil is active.

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Featured researches published by M. Anantha Sunil.


photovoltaic specialists conference | 2012

SnS quantum dot solar cells with Cu 2 S as counter electrode

K.G. Deepa; M. Anantha Sunil; J. Nagaraju

Different size SnS quantum dots are prepared by chemical bath deposition. size of the particles are varied from 2.4 to 14.4 nm by varying the deposition time from 30 to 120 min. solar cells are fabricated with these quantum dots. Cu2S coated FTO is used as counter electrode instead of the conventional platinum electrode and Na2S as electrolyte. Cu2S acts as a good catalyst for the polysulfide electrolyte. on comparing with a cell having platinum counter electrode and iodine based electrolyte, Cu2S -polysulfide combination found to improve both the short circuit current and fill factor of the solar cell.


photovoltaic specialists conference | 2012

Effect of sulphur variation in AgInS 2 thin films prepared by chemical spray pyrolysis

M. Anantha Sunil; K.G. Deepa; J. Nagaraju

AgInS<sub>2</sub> thin films are deposited by chemical spray pyrolysis technique. Aqueous solution of Silver Nitrate (AgNO<sub>3</sub>), Indium Chloride (InCl<sub>3</sub>), and Thiourea (CS (NH<sub>2</sub>)<sub>2</sub>) are used as the precursors and substrate temperature is kept at 3500C. Effect of variation in sulfur concentration was studied by varying the [S<sub>2-</sub>]/ [In<sup>3+</sup>] ratio. Orthorhombic structured AgInS<sub>2</sub> with preferred orientation along (0 0 2) plane is identified using XRD. Even though the crystallinity decreased with increase in sulfur concentration, Ag<sub>2</sub>O<sub>3</sub> phase which was observed in the sulfur poor sample was found to be disappeared for higher Sulfur concentration. EDAX data revealed nearly stoichiometric films for [S<sub>2-</sub>]/ [In<sup>3+</sup>] ratio 5, with atomic percentage of 26.69, 23.80, 49.81 for Ag, In, S respectively. SEM images show a gradual change from non-spherical to spherical grains with increase in sulfur concentration. Band gap measured was in the range 1.85 to 2.03 eV.


Thin Solid Films | 2014

Cu(In,Al)Se2 thin films by one-step electrodeposition for photovoltaics

K.G. Deepa; N. Lakshmi Shruthi; M. Anantha Sunil; J. Nagaraju


Thin Solid Films | 2014

Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique

M. Anantha Sunil; K.G. Deepa; J. Nagaraju


Applied Surface Science | 2017

Effect of metal layer stacking order on the growth of Cu2ZnSnS4thin films

Narayana Thota; M. Gurubhaskar; M. Anantha Sunil; P. Prathap; Y.P. Venkata Subbaiah; Ashutosh Tiwari


Vacuum | 2017

Effect of selenium incorporation at precursor stage on growth and properties of Cu2ZnSnSe4 thin films

Dipak Ramdas Nagapure; Rhishikesh Mahadev Patil; G. Swapna Mary; G. Hema Chandra; M. Anantha Sunil; Y.P. Venkata Subbaiah; Mukul Gupta; R. Prasada Rao


Vacuum | 2016

Growth and characterization of Cu2ZnGeSe4 thin films by selenization of multiple stacks (Cu/Se/ZnSe/Se/Ge/Se) in high vacuum

G. Swapna Mary; Dipak Ramdas Nagapure; Rhishikesh Mahadev Patil; G. Hema Chandra; M. Anantha Sunil; R. Prasada Rao; Mukul Gupta; Y.P. Venkata Subbaiah


Thin Solid Films | 2015

Sulfurization of sputtered Ag-In precursors for AgInS2 solar cell absorber layers

M. Anantha Sunil; Narayana Thota; K.G. Deepa; Nagaraju Jampana


Applied Surface Science | 2014

Low temperature sulfurization of electrodeposited Cu(In,Al)Se-2 thin films

N. Lakshmi Shruthi; K.G. Deepa; M. Anantha Sunil; J. Nagaraju


Journal of Electronic Materials | 2018

Influence of Selenization Time on Microstructural, Optical, and Electrical Properties of Cu2ZnGeSe4 Films

G. Swapna Mary; G. Hema Chandra; M. Anantha Sunil; Mukul Gupta

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G. Hema Chandra

Visvesvaraya National Institute of Technology

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J. Nagaraju

Indian Institute of Science

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K.G. Deepa

Indian Institute of Science

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Mukul Gupta

University Grants Commission

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Dipak Ramdas Nagapure

Visvesvaraya National Institute of Technology

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G. Swapna Mary

Visvesvaraya National Institute of Technology

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Rhishikesh Mahadev Patil

Visvesvaraya National Institute of Technology

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R. Prasada Rao

National University of Singapore

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N. Lakshmi Shruthi

Indian Institute of Science

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