K. Horiba

Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

The spatial distribution of chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure has been studied by photoemission electron microscopy. It has been found that the change in resistance that occurs with the application of the first voltage is caused by the formation of a reduction path through the CuO channel between the Pt electrodes. A detailed analysis suggests that Joule-heat-assisted reduction induced by the current flowing through the device may play an important role in the formation of the conductive reduction path.

A high-resolution synchrotron-radiation angle-resolved photoemission spectrometer with in situ oxide thin film growth capability

We have constructed a high-resolution synchrotron-radiation angle-resolved photoemission (ARPES) spectrometer combined with a combinatorial laser molecular-beam epitaxy (laser MBE) thin film growth system in order to investigate the electronic structure of transition metal oxide thin films. An ARPES spectrometer GAMMADATA SCIENTA SES-100 was selected for the high-throughput and high-energy and angular-resolution ARPES measurements. A total energy resolution of 6.3 meV and a momentum (an angular) resolution of 0.02 A−1 (0.2°) were obtained at a photon energy of 40 eV. The system is installed at the high-resolution vacuum-ultraviolet beamline BL-1C or the soft-x-ray undulator beamline BL-2C at the Photon Factory as an end-station. Another distinctive feature of this system is the direct connection from the spectrometer to a laser MBE chamber. Thin film samples can be transferred quickly into the photoemission chamber without breaking ultrahigh vacuum. Laser MBE is one of the best methods to grow thin films ...

In vacuo photoemission study of atomically controlled La 1 − x Sr x Mn O 3 thin films: Composition dependence of the electronic structure

We have investigated change in the electronic structures of atomically controlled

Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide

{\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}\mathrm{Mn}{\mathrm{O}}_{3}

In situ photoemission characterization of terminating-layer-controlled La0.6Sr0.4MnO3 thin films

(LSMO) thin films as a function of hole-doping levels

Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO2

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Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis.

in terms of in vacuo photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The in vacuo PES measurements on a well-ordered surface of high-quality epitaxial LSMO thin films enable us to reveal their intrinsic electronic structures, especially the structure near the Fermi level

Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

({E}_{F})

Temperature-dependent Eu 3 d − 4 f x-ray absorption and resonant photoemission study of the valence transition in Eu Ni 2 ( Si 0.2 Ge 0.8 ) 2

. We found that overall the features of the valence band as well as the core levels monotonically shifted toward lower binding energy as

Observation of rebirth of metallic paths during resistance switching of metal nanowire

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