K. Kechedzhi

Influence of trigonal warping on interference effects in bilayer graphene

Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

Filling-factor-dependent magnetophonon resonance in graphene

We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 --> +, 1 and -, 1 --> 0, at a magnetic field B{0} approximately 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice vibrations.

Quantum transport thermometry for electrons in graphene

We propose a method of measuring the electron temperature T_{e} in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime (T_{e} approximately T, the bath temperature). The method can be especially useful in case of overheating, T_{e}>T. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that T_{e} extracted from the correlation function is insensitive to these details.

Mesoscopic conductance fluctuations in graphene

We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures.

Quantum kinetic equation and universal conductance fluctuations in graphene

We analyze universal conductance fluctuations (UCFs) in graphene in the framework of diagrammatic perturbation theory in the metallic regime. It is shown that strong intervalley scattering lifts the valley degeneracy of electronic states, whereas at weak intervalley scattering two valleys independently contribute such that the variance of UCF would be expected to show sample- and geometry-dependent behaviors.

Critical integer quantum Hall topology and the integrable Maryland model as a topological quantum critical point

One dimensional tight binding models such as Aubry-Andre-Harper (AAH) model (with onsite cosine potential) and the integrable Maryland model (with onsite tangent potential) have been the subject of extensive theoretical research in localization studies. AAH can be directly mapped onto the two dimensional Hofstadter model which manifests the integer quantum Hall topology on a lattice. However, no such connection has been made for the Maryland model (MM). In this work, we describe a generalized model that contains AAH and MM as the limiting cases with the MM lying precisely at a topological quantum phase transition (TQPT) point. A remarkable feature of this critical point is that the 1D MM retains well defined energy gaps whereas the equivalent 2D model becomes gapless, signifying the 2D nature of the TQPT.

Plasmon anomaly in the dynamical optical conductivity of graphene

We theoretically consider the effect of plasmon collective modes on the frequency-dependent conductivity of graphene in the presence of the random static potential of charged impurities. We develop an equation of motion approach suitable for the relativistic Dirac electrons in graphene that allows analytical high-frequency asymptotic solution (

Proposed chiral texture of the magnetic moments of unit-cell loop currents in the pseudogap phase of cuprate superconductors.

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Gate-tunable quantum transport in double-layer graphene

where

Signatures of localization in the effective metallic regime of high-mobility Si MOSFETs

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