Vladimir I. Fal’ko

k·p theory for two-dimensional transition metal dichalcogenide semiconductors

We present k.p Hamiltonians parametrized by ab initio density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the K , Q , Γ , and M points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides (TMDCs). We discuss the parametrization of the essential parts of the k.p[ Hamiltonians for MoS2 , MoSe2 , MoTe2 , WS2 , WSe2 , and WTe2 , including the spin-splitting and spin-polarization of the bands, and we briefly review the vibrational properties of these materials. We then use k.p theory to analyse optical transitions in two-dimensional TMDCs over a broad spectral range that covers the Van Hove singularities in the band structure (the M points). We also discuss the visualization of scanning tunnelling microscopy maps.

High-sensitivity photodetectors based on multilayer GaTe flakes

Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm(2) V(-1) s(-1). The gate transistor exhibits a high photoresponsivity of 10(4) A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.

Symmetry of boundary conditions of the Dirac equation for electrons in carbon nanotubes

We consider the effective mass model of spinless electrons in single-wall carbon nanotubes that is equivalent to the Dirac equation for massless fermions. Within this framework we derive all possible energy independent hard wall boundary conditions that are applicable to metallic tubes. The boundary conditions are classified in terms of their symmetry properties and we demonstrate that the use of different boundary conditions will result in varying degrees of valley degeneracy breaking of the single-particle energy spectrum.

Dark trions and biexcitons in WS2 and WSe2 made bright by e-e scattering

The direct band gap character and large spin-orbit splitting of the valence band edges (at the K and K’ valleys) in monolayer transition metal dichalcogenides have put these two-dimensional materials under the spot-light of intense experimental and theoretical studies. In particular, for Tungsten dichalcogenides it has been found that the sign of spin splitting of conduction band edges makes ground state excitons radiatively inactive (dark) due to spin and momentum mismatch between the constituent electron and hole. One might similarly assume that the ground states of charged excitons and biexcitons in these monolayers are also dark. Here, we show that the intervalley (K ⇆ K′) electron-electron scattering mixes bright and dark states of these complexes, and estimate the radiative lifetimes in the ground states of these “semi-dark” trions and biexcitons to be ~10 ps, and analyse how these complexes appear in the temperature-dependent photoluminescence spectra of WS2 and WSe2 monolayers.

Weak localization and conductance fluctuations in a quantum dot with parallel magnetic field and spin-orbit scattering

In the presence of both spin-orbit scattering and a magnetic field the conductance of a chaotic GaAs quantum dot displays quite a rich behavior. Using a Hamiltonian derived by Aleiner and Fal’ko [Phys. Rev. Lett. 87, 256801 (2001)] we calculate the weak localization correction and the covariance of the conductance, as a function of parallel and perpendicular magnetic field and spin-orbit coupling strength. We also show how the combination of an in-plane magnetic field and spin-orbit scattering gives rise to a component to the magnetoconductance that is antisymmetric with respect to reversal of the perpendicular component of the magnetic field and how spin-orbit scattering leads to a “magnetic-field echo” in the conductance autocorrelation function. Our results can be used for a measurement of the Dresselhaus and Bychkov-Rashba spin-orbit scattering lengths in a GaAs/GaAlAs heterostructure.

Landau levels in deformed bilayer graphene at low magnetic fields

We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ν=±4 being the most stable in the quantum Hall effect measurement, instead of ν=±8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ν=±4 is, down to very low fields, weakly dependent on the strength of the magnetic field.

Magnetothermopower and magnon-assisted transport in ferromagnetic tunnel junctions

We present a model of the thermopower in a mesoscopic tunnel junction between two ferromagnetic metals based upon magnon-assisted tunneling processes. In our model, the thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. We predict a particularly large thermopower effect in the case of a junction between two half-metallic ferromagnets with antiparallel polarizations, SAP∼−(kB/e), in contrast to SP≈0 for a parallel configuration.

Weak Localization and Spin-Orbit Coupling in Monolayer and Bilayer Graphene

The effective Hamiltonian of low-energy electrons in monolayer and bilayer graphene is described, taking into account static disorder and spin-orbit coupling. We review different regimes of weak localization in these materials that arise from an interplay between lattice, valley, and spin degrees of freedom and the relative strength of different types of symmetry-breaking scattering. At very low temperature, weak localization may be sensitive to the presence and nature of spin-orbit coupling, and we derive formulae for the corresponding low-field magnetoresistance. If Bychkov-Rashba spin-orbit coupling is present, it tends to induce weak anti-localization in both monolayers and bilayers—as in semiconductors and metals—but, if intrinsic spin-orbit coupling prevails, it results in a suppression of weak localization.

Transport anomaly at the ordering transition for adatoms on graphene

We analyze a manifestation of the partial ordering transition of adatoms on graphene in resistivity measurements. We find that the Kekule mosaic ordering of adatoms increases the sheet resistance of graphene due to a gap opening in its spectrum and that critical fluctuations of the order parameter lead to a nonmonotonic temperature dependence of resistivity with a cusp-like minimum at T = T-c

Introducing 2D Materials - A new multidisciplinary journal devoted to all aspects of graphene and related two-dimensional materials

On behalf of the Editorial Board and IOP Publishing, I am pleased to announce the opening of 2D Materials. Research on two-dimensional materials, such as graphene, now involves thousands of researchers worldwide cutting across physics, chemistry, engineering and biology, and extending from fundamental science to novel applications. It is this situation which defines the scope and mission of 2D Materials, a new journal that will serve all sides of this multidisciplinary field by publishing urgent research of the highest quality and impact.