K. Kubo

Influence of ZnO buffer layer on ZnO nanowire growth by nanoparticle-assisted pulsed laser deposition

We have succeeded in growing various ZnO nanocrystals, such as nanowires, nanorods, and nanowalls, by a nanoparticle-assisted pulsed-laser deposition (NAPLD). In this study, low-density ZnO nanowires were synthesized by introduction of a ZnO buffer layer. Low-density hexagonal cone-shape ZnO cores are formed on the buffer layer, and vertically-aligned ZnO nanowires are grown on the cores. The density of the nanowires was clearly decreased with increasing the thickness of the Buffer layer. The buffer layer can be used as one of the effective additives to control the growth density of the ZnO nano-crystals synthesized by NAPLD.

Synthesis of layer-structured ZnO nano-crystals by nanoparticle-assisted pulsed laser deposition

Zinc oxide (ZnO) nanowires have attracted a great attention for next optoelectronic applications, such as an UV-LED. We have been succeeded in growing vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed-laser deposition (NAPLD) without using any catalyst. In this study, we fabricated layer-structured ZnO nanowires by NAPLD using a multi-target changer system.

Fabrication of layer structured ZnO nanowire by nanoparticle-assisted pulsed laser deposition for optoelectronic application

ZnO nanowires have attracted a great attention as building blocks for the optoelectronic devices. For the practical optoelectronic applications based on the ZnO nanowires, a synthesis technique for layered structure has significant advantage to fabricate a pn junction, a core/shell structure, and a multiple quantum well structure. We have been succeeded in growing nanowires on the pre-deposited ZnO film and core/shell structure by a newly developed nanoparticle-assisted pulsed-laser deposition (NAPLD) using multi-target changer. In this paper, recent progresses of synthesis of layer-structured ZnO nanowires by the NAPLD are described.

Synthesis and characterization of layer structured ZnO nanowire for ultraviolet light-emitting diode

We have been succeeded in growing vertically aligned ZnO nanowires by a newly developed nanoparticle-assisted pulsed-laser deposition (NAPLD) without any catalyst. In this study, layer structured ZnO nanowires, such as film-wire layered structure and core/shell structure, were synthesized using multi-target changer system. In this paper, synthesis and photoluminescence characteristic of the layer structured ZnO nanowires are described.

Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation

Phosphorus doped ZnO (ZnO:P) nanowires have been successfully grown on the annealed c-cut sapphire substrate using catalyst-free nanoparticle-assisted pulsed-laser deposition, and characteristics of the nanowires was evaluated. A sintered ZnO target doped with P2 O5 was used for synthesis the ZnO:P nanowires.

Patterned growth of ZnO nanowires using NAPLD with nano-imprint

For the practical optoelectronic applications based on the ZnO nanowires, control the growth position of ZnO nanowires is essentially required. In this paper, we describe progress of synthesis the patterned growth of ZnO nanowires by chemical vapor deposition method and nanoparticle assisted pulsed laser deposition method using nano-imprinting technique.