K. Leong

Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high fMAX InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.

Recent progress in scaling InP HEMT TMIC technology to 850 GHz

In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This achievement is possible by transistor scaling, frontside and backside feature scaling and detailed transistor modeling and design.

Sub-MMW active integrated circuits based on 35 nm InP HEMT technology

In this paper, we present the latest advancements of active sub-MMW integrated circuits (S-MMIC) based on 35 nm InP HEMT technology. The current state-of-the-art results include the first demonstrated LNA, PA and fundamental oscillator modules above 300 GHz.

Sub-millimeter wave InP technologies and integration techniques

In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semiconductor device technologies with CMOS to create complex, compact, and low weight future systems.

Amplifier based broadband pixel for sub-millimeter wave imaging

Abstract. Broadband sub-millimeter wave technology has received significant attention for potential applications in security, medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current millimeter wave systems, sub-millimeter wave systems have been hampered by a fundamental lack of amplification with sufficient gain and noise figure properties. We report a broadband pixel operating from 300 to 340 GHz, biased off a single 2 V power supply. Over this frequency range, the amplifiers provide > 40  dB gain and <8  dB noise figure, representing the current state-of-art performance capabilities. This pixel is enabled by revolutionary enhancements to indium phosphide (InP) high electron mobility transistor technology, based on a sub-50 nm gate and indium arsenide composite channel with a projected maximum oscillation frequency fmax>1.0  THz. The first sub-millimeter wave-based images using active amplification are demonstrated as part of the Joint Improvised Explosive Device Defeat Organization Longe Range Personnel Imager Program. This development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to brownout problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration missions.

A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure

In this letter, a packaged Low Noise Amplifier (LNA) operating at 670 GHz is presented. The LNA uses a new generation of 25 nm InP HEMT with 1.5 THz fMAX. The eight-stage amplifier shows approximately 16 dB associated gain in package with a noise figure ranging from 9.4-9.9 dB measured across a 15 GHz bandwidth. These results represent better than 3 dB improvement in sensitivity to previously published InP HEMT results, and represent the lowest measured noise figure for any LNA at this operating frequency.

Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications

In this paper, we report recent advances on sub-50 nm InP HEMT have achieved new benchmarks of 586 GHz fT and 7 dB amplifier circuit gain at 390 GHz

Sub-50NM InGaAs/InAlAs/InP HEMT for sub-millimeter wave power amplifier applications

An InGaAs/InAlAs/InP HEMT with sub-50nm EBL gate has been developed for sub-millimeter wave (SMMW) power amplifier (PA) applications. In this paper, we report the device performance including high drain current, high gain, high breakdown voltage and scalability to large gate periphery, which are essential for achieving high output power at these frequencies. Excellent yield, process uniformity and repeatability are also demonstrated, which is critical for power amplifiers employing large number of devices and gate fingers. 10mW output power is demonstrated from a fixtured 338 GHz PA module.

Application of InP HEMT to Sub-millimeter wave atmospheric sensing

The operating frequency of InP integrated circuits has pushed well into the Submillimeter wave frequency band, with amplification reported to 1 THz (1,000 GHz). This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter wave radiometers for earth remote sensing.

Broadband sub-millimeter wave amplifer module with 38dB gain and 8.3dB noise figure

Broadband sub-millimeter wave technology has received significant attention for potential applications in security, medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current millimeter-wave systems, sub-millimeter-wave systems are hampered by a fundamental lack of amplification with sufficient gain and noise figure properties. We report on the development of a sub-millimeter wave amplifier module as part of a broadband pixel operating from 300-350 GHz, biased off of a single 2V power supply. Over this frequency range, > 38 dB gain and < 8.3 dB noise figure are obtained and represent the current state-of-art performance capabilities. The prototype pixel chain consists of two WR3 waveguide amplifier blocks, and a horn antenna and diode detector. The low noise amplifier Sub-Millimeter-wave Monolithic Integrated Circuit (SMMIC) was originally developed under the DARPA SWIFT and THz Electronics programs and is based on sub 50 nm Indium Arsenide Composite Channel (IACC) transistor technology with a projected maximum oscillation frequency fmax > 1.0 THz. This development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to brown-out problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration missions.