Vesna Radisic

164-GHz MMIC HEMT doubler

In this paper, a MMIC frequency doubler based on an InP HEMT and grounded CPW (GCPW) technology is reported. The doubler demonstrated a conversion loss of only 2 dB and output power of 5 dBm at 164 GHz. The 3 dB output power bandwidth is 14 GHz, or 8.5%. This is the best reported result for a MMIC HEMT doubler above 100 GHz.

40 Gb/s differential traveling wave modulator driver

In this letter a MMIC differential traveling wave driver for 40 Gb/s electro-absorption modulation driver is presented. The driver delivers 2.7 Vp-p or 2.4 V eye amplitude at each output into 50 /spl Omega/ load. The driver has high gain (>20 dB), a 3 dB bandwidth of 45 GHz, and rise/fall times of only 10/9 ps, respectively. The circuit uses a single -5.0 V power supply and consumes 1.8 W of dc power. The driver also features cross-point control and output amplitude control functions.

A high-performance 85-119 GHz GCPW MMIC low noise amplifier

In this paper, a high-performance four-stage MMIC low noise amplifier based on InP HEMT and grounded CPW (GCPW) technology is presented. The LNA exhibits a measured gain of 20/spl plusmn/3 dB from 85 to 119 GHz, a 33% bandwidth. The noise figure is 3.7 dB at 93 GHz. The measured amplifier P/sub 1 dB/ is 10 mW at 98 GHz.

80 GHz MMIC HEMT VCO

In this letter a monolithic voltage-controlled oscillator (VCO) operating in the 77.5-83.5 GHz range is presented. InP HEMTs are used for both the active device and varactor. The VCO demonstrated a tuning range of 6 GHz and an output power better than 12.5 dBm in the entire tuning range.

The development of 40 Gb/s limiting-distributed modulator drivers in InP HBTs

The development of monolithic modulator drivers designed in InP SHBT technologies for 40-Gb/s optical communications is presented. The drivers consist of a differential limiting pre-driver and a differential distributed post-amplifier to achieve sufficient gain-bandwidth product, and feature cross-point control and output amplitude adjustments to ensure sufficient output extinction ratio. The drivers have achieved output swings of 2.6 Vp-p at each side with a 0.5 Vp-p single-sided input, and consume 1.72 W power.

Ultra Broadband Low Power MMIC Amplifier

A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 ¿m T-gate InP HEMTs with 2×25 ¿m gate periphery. This compact microstrip MMIC is only 1.5 mm2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.

Monolithic Millimeter-Wave Source Incorporating Planar Surface Wave Assisted Antenna

A monolithic 120 GHz free-space, continuous-wave source capable of providing 12.6 dBm of EIRP at 18% DC-to-EIRP conversion efficiency is presented. We utilize both the excellent high frequency performance of the InP based HEMT technology developed by HRL along with the newly developed surface wave assisted antenna concept. Because the antenna itself prefers to be fabricated on a high dielectric constant substrate, monolithic integration with MMIC circuits becomes straightforward