K. M. McCreary

Tunneling Spin Injection into Single Layer Graphene

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

Electronic doping and scattering by transition metals on graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope

Electrical detection of spin precession in single layer graphene spin valves with transparent contacts

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Manipulation of spin transport in graphene by surface chemical doping.

type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

1/r

Effect of cluster formation on graphene mobility

Coulomb scattering. At high coverage, Pt films are able to produce doping that is either

Growth of atomically smooth MgO films on graphene by molecular beam epitaxy

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Metallic and insulating adsorbates on graphene

type or weakly

Spin transport in graphite and graphene spin valves

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A graphene solution to conductivity mismatch: Spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

type, which provides experimental evidence for a strong interfacial dipole favoring