Keyu Pi

Electronic doping and scattering by transition metals on graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope

Electrical detection of spin precession in single layer graphene spin valves with transparent contacts

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Manipulation of spin transport in graphene by surface chemical doping.

type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to

Growth of atomically smooth MgO films on graphene by molecular beam epitaxy

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Spin transport in graphite and graphene spin valves

Coulomb scattering. At high coverage, Pt films are able to produce doping that is either

Growth of single-crystalline, atomically smooth MgO films on Ge(0 0 1) by molecular beam epitaxy

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Oxidation-induced biquadratic coupling in Co/Fe/MgO/Fe(001)

type or weakly

Enhanced spin injection and spin lifetime in Graphene

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Is Coulomb scattering important for spin relaxation in graphene

type, which provides experimental evidence for a strong interfacial dipole favoring

Growth of Single-Crystalline, Atomically Smooth MgO Films on Ge(001) by Molecular Beam Epitaxy

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