K. Misiakos

Calculation of pixel detector capacitances through three dimensional numerical solution of the Laplace equation

A method for the solution of the three dimensional Laplace equation is presented. The method applies to planar geometry cases, such as pixel detector devices, characterized by mixed boundary conditions. Through this algorithm the capacitances associated with pixel detectors are calculated. These capacitances, which are the pixel to substrate and the interpixel capacitances, are of great importance in the design of a pixel detector since they influence the noise and the cross talk effects between pixels. Capacitances for various pixel and interpixel dimensions are presented along with an analytical approximation for the calculation of the total pixel capacitance. >

A small area charge sensitive readout chain with a dual mode of operation

AbstractA charge sensitive readout chain has been designed and fabricated in acommercially available 0.8 μm CMOS technology. The readout chain is optimizedfor pixel detectors measuring soft X-ray energies up to 20 KeV. In the first modean analog signal proportional to input charge is generated and processed in realtime. In the second mode a peak-and-hold operation is enabled and therelevant signal is processed in later time. This dual mode of operation iscontrolled by an external digital signal. The readout chain consists of a chargeamplifier, a shaper, an operational amplifier which can either operate as avoltage amplifier or a peak detector and an output buffer. Its area is

An ultra fast current amplifier with active feedback loop

270\mu {\text{m}} \times {\text{150}}\mu {\text{m}}

A silicon pixel detector with integrated amplification devices

. The gain at the shaper output is 378 mv/fC, theENC is 16

On the equivalent circuit model of reverse biased diodes made on high resistivity substrates

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Three-dimensional simulation of charge transport in pixel detectors

rms at 160 nsec shaping time. The overall gainis 557 mV/fC, the ENC is