K. Terai

Itinerant U 5 f band states in the layered compound UFeGa 5 observed by soft x-ray angle-resolved photoemission spectroscopy

We have performed angle-resolved photoemission spectroscopy (ARPES) experiments on paramagnetic UFeGa5 using soft X-ray synchrotron radiation (hn=500eV) and derived the bulk- and U 5f-sensitive electronic structure of UFeGa5. Although the agreement between the experimental band structure and the LDA calculation treating U 5f electrons as being itinerant is qualitative, the morphology of the Fermi surface is well explained by the calculation, suggesting that the U 5f states can be essentially understood within the itinerant-electron model.

Soft x-ray magnetic circular dichroism study of weakly ferromagnetic Zn1−xVxO thin film

The authors performed a soft x-ray magnetic circular dichroism (XMCD) study of a Zn1−xVxO thin film, which showed a small ferromagnetic moment. Field and temperature dependences of V 2p XMCD signals indicated the coexistence of Curie-Weiss paramagnetic and antiferromagnetic V ions, quantitatively consistent with the magnetization measurements. The authors attributed the paramagnetic signal to V ions substituting for Zn sites, which are somewhat elongated along the c axis. A possible formation of ferromagnetically dead layers in the surface region of the film is also discussed.

Photoemission and x-ray absorption studies of valence states in (Ni,Zn, Fe,Ti)3O4 thin films exhibiting photoinduced magnetization

By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)3O4 thin films, which exhibits a cluster glass behavior with a spin-freezing temperature Tf of ∼230K and photoinduced magnetization (PIM) below Tf. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe3+) and tetravalent (Ti4+), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe2+ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)3O4 thin films, which exhibits a cluster glass behavior with a spin-freezing temperature Tf of ∼230K and photoinduced magnetization (PIM) below Tf. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe3+) and tetravalent (Ti4+), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe2+ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.

Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni1-xFexO with hole doping

The electronic structure of Li-doped Ni

X-ray Magnetic Circular Dichroism and Photoemission Study of the Diluted Ferromagnetic Semiconductor Zn1-xCrxTe

_{1-x}

X-ray magnetic circular dichroism and photoemission studies of ferromagnetism inCaMn1−xRuxO3thin films

Fe

Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

_x

Soft X-ray Magnetic Circular Dichroism and Photoemission Studies of II–VI Diluted Ferromagnetic Semiconductor Zn1−xCrxTe

O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni

Electronic structure and magnetism of CaMn1-xRuxO3CaMn1-xRuxO3 thin films

2p

Electronic structure and magnetism of CaMn 1 - x Ru x O 3 thin films

core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe