K.Y. Chuang
National Sun Yat-sen University
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Publication
Featured researches published by K.Y. Chuang.
photovoltaic specialists conference | 2012
K.Y. Chuang; K.D. Tzeng; T. E. Tzeng; T. S. Lay; Chien-Chung Lin; H. Cho; David Jui-Yang Feng
In order to enhance absorption at infrared range for GaAs based solar cell, we insert the nine-layer of vertically coupled quantum dots (VCQDs) into the active layer. We fine modulated the GaAs spacer thickness of coupled In<sub>0.75</sub>Ga<sub>0.25</sub>As QDs, and investigated the effects on photovoltaic response. For the open-circuit voltage (V<sub>oc</sub>), the values decreases from 0.61 V to 0.55 V as the spacer thickness (d) decreases from d= 15 nm to 5 nm for the nine-layer VCQDs solar cells. The reduction of V<sub>oc</sub> for the VCQDs solar cells is attributed to the accumulation of compressive strain energy in the active QD region. For the sample of d=10 nm shows the best performance of current density (J<sub>sc</sub>~24 mA/cm<sup>2</sup>) and efficiency (η~10.6). The J<sub>sc</sub> and η are increases by 55% and 112% more than the device without QDs, respectively.
international conference on indium phosphide and related materials | 2010
K.Y. Chuang; C. Y. Kuo; T. E. Tzeng; David Jui-Yang Feng; T. S. Lay
We have investigated the electro-optic effect for the vertically coupled InGaAs quantum dots. In addition to large TE-polarized electro-optic coefficient, TM-polarized electro-optic effect is observed. The linear and quadratic electro-optic coefficients are larger than GaAs-base multiple quantum well structures.
international conference on indium phosphide and related materials | 2008
K.Y. Chuang; David Jui-Yang Feng; C. Y. Chen; T. E. Tzeng; T. S. Lay
We report the differential absorption (Deltaalpha) spectra of the vertically coupled triple-layer InGaAs quantum dots (QDs) at different reverse bias. The results show that the decrease of spacer layer thickness increases the differential absorption. Adding p-type modulation doping further increases the differential absorption amplitude at ground state.
international conference on indium phosphide and related materials | 2008
T.C. Hsu; T. E. Tzeng; E.Y. Lin; K.Y. Chuang; C. L. Chiu; T. S. Lay
The atomic intermixing effects on emission wavelength blue-shift for self-assembled InGaAs/InAlAs quantum dots on InP substrate were investigated. A large blue-shift upto 343 nm, from lambda=1632 nm to 1289 nm, was obtained by SiO2 sputtering deposition and rapid thermal annealing at 800degC.
international conference on indium phosphide and related materials | 2007
K.Y. Chuang; C. Y. Chen; T. E. Tzeng; David Jui-Yang Feng; T. S. Lay; T. Y. Chang
Triple-layer InGaAs QDs of different spacer layer thickness are characterized by polarized electroluminescence and photocurrent spectroscopy. The results show that the decease of spacer layer thickness increases the TE/TM insensitivity.
international conference on indium phosphide and related materials | 2007
H. J. Chang; E.Y. Lin; K.Y. Chuang; C. L. Chiu; T. S. Lay; T. Y. Chang
A quantum well intermixing process combining ICP-RIE and SiO2 sputtering was investigated for the InGaAs/InGaAlAs multi-quantum wells. Optimal conditions including ICP-RIE etching depth, SiO2 deposition, and RTA process were obtained for a 60-nm blueshift.
Journal of Crystal Growth | 2011
K.Y. Chuang; T. E. Tzeng; Y.C. Liu; K.D. Tzeng; T. S. Lay
Physica E-low-dimensional Systems & Nanostructures | 2008
K.Y. Chuang; C. Y. Chen; T. E. Tzeng; J.Y. Feng; T. S. Lay
Journal of Crystal Growth | 2009
K.Y. Chuang; C. Y. Chen; T. E. Tzeng; David Jui-Yang Feng; T. S. Lay
Journal of Crystal Growth | 2011
J.Y. Hsing; T. E. Tzeng; K.Y. Chuang; T. S. Lay; M.Y. Kuo; Y.Y. Tsai; K.S. Hsu; Min-Hsiung Shih