Kai-He Ding

Magnetotransport and current-induced spin transfer torque in a ferromagnetically contacted graphene

We theoretically investigate the spin-dependent transport through a graphene sheet between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the graphene to induce an exchange splitting between spin-up and spin-down carriers. By using standard nonequilibrium Greens function (NGF) techniques, it is demonstrated that the density of states (DOS) decreases for spin-up and increases for spin-down when the polarization strength of the two leads in parallel alignment increases. For the electron energy around the exchange splitting, the DOS for both spin-up and spin-down channels is independent of the polarization. In contrast, the conductance increases for spin-up but decreases for spin-down with an increase of the polarization. Interestingly, the magnitude of tunneling magnetoresistance (TMR) can be dramatically suppressed with the increase of the exchange splitting in graphene. Furthermore, the current-induced spin transfer torque (STT) dependence on the relative angle θ between the magnetic moments of the two leads shows a sine-like behavior and is enhanced with an increase of the polarization and/or the bias voltage. We attribute these spin-resolved effects to the breaking of the insulator-type properties of graphene with an exchange splitting between spin-up and spin-down carriers.

Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads

We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the AGNR to induce an exchange splitting between spin-up and -down carriers. By using the standard nonequilibrium Greens function (NGF) technique, it is demonstrated that the spin-resolved transport property for the system depends sensitively on both the width of AGNR and the polarization strength of FM leads. The tunneling magnetoresistance (TMR) around zero bias voltage possesses a pronounced plateau structure for a system with semiconducting 7-AGNR or metallic 8-AGNR in the absence of exchange splitting, but this plateau structure for the 8-AGNR system is remarkably broader than that for the 7-AGNR one. Interestingly, an increase of the exchange splitting Δ suppresses the amplitude of the structure for the 7-AGNR system. However, the TMR is much enhanced for the 8-AGNR system under a bias amplitude comparable to the splitting strength. Further, the current-induced spin-transfer torque (STT) for the 7-AGNR system is systematically larger than that for the 8-AGNR one. The findings here suggest the design of GNR-based spintronic devices by using a metallic AGNR, but it is more favorable to fabricate a current-controlled magnetic memory element by using a semiconducting AGNR.

Single- or multi-flavor Kondo effect in graphene

Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adatom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial-wave representation we study the nature of the coupling between the impurity and the conducting electrons. The components from the two Dirac points are mixed while interacting with the impurity. Two configurations are considered explicitly: the adatom is above one atom (ADA), the other case is the adatom above the center the honeycomb (ADC). For ADA the impurity is coupled with one flavor for both A and B sublattice and both Dirac points. For ADC the impurity couples with multi-flavor states for a spinor state of the impurity. We show, explicitly for a 3d magnetic atom, dz2, (dxz,dyz), and (dx2- y2,dxy) couple respectively with the Γ1, Γ5(E1), and Γ6(E2) representations (reps) of C6v group in ADC case. The bases for these reps of graphene are also derived explicitly. For ADA we calculate the Kondo temperature.

Localized magnetic states in biased bilayer and trilayer graphene

We study the localized magnetic states of an impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene shows mixed features of Dirac and conventional fermions. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is applied, the dependence of impurity magnetic states on the impurity energy exhibits a different behavior for bilayer and trilayer graphene due to the opening of a gap between the valence and the conduction band in the bilayer graphene with an applied gate bias. The magnetic moment and the corresponding magnetic transition of the impurity in bilayer graphene are also investigated.

Magnetotransport through graphene spin valves

We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using Keldysh’s nonequilibrium Green’s function method we show that, in absence of external magnetic fields, the current-voltage curves are nonlinear. Around zero bias the differential conductance versus bias voltage possesses a strong dip. The zero-bias anomaly in the tunnel magnetoresistance TMR is affected strongly by the leads’ spin polarization. Depending on the value of the bias-voltage TMR exhibits a behavior ranging from an insulating to a metallic type. In presence of a static external magnetic field the differential conductance and TMR as a function of the bias voltage and the strength of the magnetic field show periodic oscillations due to Landau-level crossings. We also inspect the effects of the temperature and the polarization degrees on the differential conductance and TMR.

Laser-assisted spin-polarized transport in graphene tunnel junctions

The Keldysh nonequilibrium Greens function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency.

Magnetotransport of Dirac fermions in graphene in the presence of spin–orbit interactions

We study theoretically the quantum transport in graphene while accounting for spin-orbit interactions (SOIs). Our method is based on the Schwinger proper-time Greens function and a decomposition over Landau level poles and the Kubo formula. Analytical expressions for both the longitudinal and the Hall conductivities are derived and given explicitly. We find, when the Rashba SOI is taken into account, the Shubnikov-de Haas (SdH) oscillation peaks of the longitudinal conductivity versus the chemical potential are split, while the SdH oscillation of the longitudinal conductivity versus a external magnetic field exhibits a beating pattern. The temperature dependence of the longitudinal conductivity becomes non-monotonic for nonzero field away from half-filling. The Rashba SOI tends to suppress the quantum Hall effect in graphene.

Magnetotransport in an impurity-doped few-layer graphene spin valve

Using Keldysh nonequilibrium Greens function method we study the spin-dependent transport through impurity-doped few layer graphene sandwiched between two magnetic leads with an arbitrary mutual orientations of the magnetizations. We find for parallel electrodes magnetizations that the differential conductance possesses two resonant peaks as the applied bias increases. These peaks are traced back to a buildup of a magnetic moment on the impurity due to the electrodes spin polarization. For a large mutual angle of the electrodes magnetization directions, the two resonant peaks approach each others and merge into a single peak for antiparallel orientation of the electrodes magnetizations. We point out that the tunneling magnetoresistance (TMR) may change sign for relatively small changes in the values of the polarization parameters. Furthermore, we inspect the behaviour of the differential conductance and TMR upon varying the temperature.

Charge and spin Hall effect in graphene with magnetic impurities

We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap.

Time-dependent magnetotransport in a driven graphene spin valve

Based on the time-dependent nonequilibrium Greens function method we investigate theoretically the time- and spin-dependent transport through a graphene layer upon the application of a static bias voltage to the electrodes and a time- alternating gate voltage to graphene. The electrodes are magnetic with an arbitrary mutual orientations of their magnetizations. We find features in the current that are governed by an interplay of the strength of the alternating field and the Dirac point in graphene: The influence of a weak alternating field on the zero bias conductance is strongly suppressed by the zero density of state at the Dirac point. In contrast, for a strong amplitude of the alternating field the current is dominated by several resonant peaks, in particular a marked peak appears at zero bias. This subtle competition results in a transition of the tunnel magnetoresistance from a broad peak to a sharp dip at a zero bias voltage applied to the electrodes. The dip amplitude can be manipulated by tuning the ac field frequency.