Kaifeng Wu

Efficient hot-electron transfer by a plasmon-induced interfacial charge-transfer transition

Improving electron harvesting Small metal nanostructures generate electrons from light by creating surface plasmons, which can transfer “hot electrons” to a semiconductor. The efficiency of this process, however, is often low because of electron-electron scattering. Wu et al. demonstrate a pathway that allows the plasmon to directly excite an electron in a strongly coupled semiconductor acceptor (see the Perspective by Kale). Cadmiun selenide nanorods bearing gold nanoparticles on their ends strongly damped plasmons via interfacial electron transfer with a quantum efficiency exceeding 24%. Science, this issue p. 632; see also p. 587 The plasmon of a gold nanoparticle on a cadmium selenide nanorod is strongly damped by interfacial electron transfer. [Also see Perspective by Kale and Christopher] Plasmon-induced hot-electron transfer from metal nanostructures is a potential new paradigm for solar energy conversion; however, the reported efficiencies of devices based on this concept are often low because of the loss of hot electrons via ultrafast electron-electron scattering. We propose a pathway, called the plasmon-induced interfacial charge-transfer transition (PICTT), that enables the decay of a plasmon by directly exciting an electron from the metal to a strongly coupled acceptor. We demonstrated this concept in cadmium selenide nanorods with gold tips, in which the gold plasmon was strongly damped by cadmium selenide through interfacial electron transfer. The quantum efficiency of the PICTT process was high (>24%), independent of excitation photon energy over a ~1–electron volt range, and dependent on the excitation polarization.

Ultrafast Charge Separation and Long-Lived Charge Separated State in Photocatalytic CdS–Pt Nanorod Heterostructures

Colloidal semiconductor-metal nanoheterostructures that combine the light-harvesting ability of semiconductor nanocrystals with the catalytic activity of small metal nanoparticles show promising applications for photocatalysis, including light-driven H(2) production. The exciton in the semiconductor domain can be quenched by electron-, hole-, and energy transfer to the metal particle, and the competition between these processes determines the photocatalytic efficiency of these materials. Using ultrafast transient absorption spectroscopy, we show that, in CdS-Pt heterostructures consisting of a CdS nanorod with a Pt nanoparticle at one end, the excitons in the CdS domain dissociate by ultrafast electron transfer (with a half-life of ∼3.4 ps) to the Pt. The charge separated state is surprisingly long-lived (with a half-life of ∼1.2 ± 0.6 μs) due to the trapping of holes in CdS. The asymmetry in the charge separation and recombination times is believed to be the key feature that enables the accumulation of the transferred electrons in the Pt tip and photocatalysis in the presence of sacrificial hole acceptors.

Hole removal rate limits photodriven H2 generation efficiency in CdS-Pt and CdSe/CdS-Pt semiconductor nanorod-metal tip heterostructures.

Semiconductor-metal nanoheterostructures, such as CdSe/CdS dot-in-rod nanorods with a Pt tip at one end (or CdSe/CdS-Pt), are promising materials for solar-to-fuel conversion because they allow rational integration of a light absorber, hole acceptor, and electron acceptor or catalyst in an all-inorganic triadic heterostructure as well as systematic control of relative energetics and spatial arrangement of the functional components. To provide design principles of such triadic nanorods, we examined the photocatalytic H2 generation quantum efficiency and the rates of elementary charge separation and recombination steps of CdSe/CdS-Pt and CdS-Pt nanorods. We showed that the steady-state H2 generation quantum efficiencies (QEs) depended sensitively on the electron donors and the nanorods. Using ultrafast transient absorption spectroscopy, we determined that the electron transfer efficiencies to the Pt tip were near unity for both CdS and CdSe/CdS nanorods. Hole transfer rates to the electron donor, measured by time-resolved fluorescence decay, were positively correlated with the steady-state H2 generation QEs. These results suggest that hole transfer is a key efficiency-limiting step. These insights provide possible ways for optimizing the hole transfer step to achieve efficient solar-to-fuel conversion in semiconductor-metal nanostructures.

Plasmon-Induced Hot Electron Transfer from the Au Tip to CdS Rod in CdS-Au Nanoheterostructures

The plasmon-exciton interaction mechanisms in CdS-Au colloidal quantum-confined plexcitonic nanorod heterostructures have been studied by transient absorption spectroscopy. Optical excitation of plasmons in the Au tip leads to hot electron injection into the CdS rod with a quantum yield of ~2.75%. This finding suggests the possibility of further optimization of plasmon-induced hot electron injection efficiency through controlling the size and shape of the plasmonic and excitonic domains for potential light harvesting applications.

Ultrafast Interfacial Electron and Hole Transfer from CsPbBr3 Perovskite Quantum Dots

Recently reported colloidal lead halide perovskite quantum dots (QDs) with tunable photoluminescence (PL) wavelengths covering the whole visible spectrum and exceptionally high PL quantum yields (QYs, 50-90%) constitute a new family of functional materials with potential applications in light-harvesting and -emitting devices. By transient absorption spectroscopy, we show that the high PL QYs (∼79%) can be attributed to negligible electron or hole trapping pathways in CsPbBr3 QDs: ∼94% of lowest excitonic states decayed with a single-exponential time constant of 4.5 ± 0.2 ns. Furthermore, excitons in CsPbBr3 QDs can be efficiently dissociated in the presence of electron or hole acceptors. The half-lives of electron transfer (ET) to benzoquinone and subsequent charge recombination are 65 ± 5 ps and 2.6 ± 0.4 ns, respectively. The half-lives for hole transfer (HT) to phenothiazine and the subsequent charge recombination are 49 ± 6 ps and 1.0 ± 0.2 ns, respectively. The lack of electron and hole traps and fast interfacial ET and HT rates are key properties that may enable the development of efficient lead halide perovskite QDs-based light-harvesting and -emitting devices.

Ultrafast exciton dynamics and light-driven H2 evolution in colloidal semiconductor nanorods and Pt-tipped nanorods.

Colloidal quantum confined one-dimensional (1D) semiconductor nanorods (NRs) and related semiconductor-metal heterostructures are promising new materials for efficient solar-to-fuel conversion because of their unique physical and chemical properties. NRs can simultaneously exhibit quantum confinement effects in the radial direction and bulk like carrier transport in the axial direction. The former implies that concepts well-established in zero-dimensional quantum dots, such as size-tunable energetics and wave function engineering through band alignment in heterostructures, can also be applied to NRs; while the latter endows NRs with fast carrier transport to achieve long distance charge separation. Selective growth of catalytic metallic nanoparticles, such as Pt, at the tips of NRs provides convenient routes to multicomponent heterostructures with photocatalytic capabilities and controllable charge separation distances. The design and optimization of such materials for efficient solar-to-fuel conversion require the understanding of exciton and charge carrier dynamics. In this Account, we summarize our recent studies of ultrafast charge separation and recombination kinetics and their effects on steady-state photocatalytic efficiencies of colloidal CdS and CdSe/CdS NRs and related NR-Pt heterostructures. After a brief introduction of their electronic structure, we discuss exciton dynamics of CdS NRs. By transient absorption and time-resolved photoluminescence decay, it is shown that although the conduction band electrons are long-lived, photogenerated holes in CdS NRs are trapped on an ultrafast time scale (∼0.7 ps), which forms localized excitons due to strong Coulomb interaction in 1D NRs. In quasi-type II CdSe/CdS dot-in-rod NRs, a large valence band offset drives the ultrafast localization of holes to the CdSe core, and the competition between this process and ultrafast hole trapping on a CdS rod leads to three types of exciton species with distinct spatial distributions. The effect of the exciton dynamics on photoreduction reactions is illustrated using methyl viologen (MV(2+)) as a model electron acceptor. The steady-state MV(2+) photoreduction quantum yield of CdSe/CdS dot-in-rod NRs approaches unity under rod excitation, much larger than CdSe QDs and CdSe/CdS core/shell QDs. Detailed time-resolved studies show that in quasi-type II CdSe/CdS NRs and type II ZnSe/CdS NRs strong quantum confinement in the radial direction facilitates fast electron transfer and hole removal, whereas the fast carrier mobility along the axial direction enables long distance charge separation and slow charge recombination, which is essential for efficient MV(2+) photoreduction. The NR/MV(2+) relay system can be coupled to Pt nanoparticles in solution for light-driven H2 generation. Alternatively, Pt-tipped CdS and CdSe/CdS NRs provide fully integrated all inorganic systems for light-driven H2 generation. In CdS-Pt and CdSe/CdS-Pt hetero-NRs, ultrafast hole trapping on the CdS rod surface or in CdSe core enables efficient electron transfer from NRs to Pt tips by suppressing hole and energy transfer. It is shown that the quantum yields of photodriven H2 generation using these heterostructures correlate well with measured hole transfer rates from NRs to sacrificial donors, revealing that hole removal is the key efficiency-limiting step. These findings provide important insights for designing more efficient quantum confined NR and NR-Pt based systems for solar-to-fuel conversion.

Efficient Extraction of Trapped Holes from Colloidal CdS Nanorods

Cadmium Sulfide (CdS) nanostructures have been widely applied for solar driven H2 generations due to its suitable band gap and band edge energetics. For an efficient photoreduction reaction, hole scavenging from CdS needs to compete favorably with many recombination processes. Extensive spectroscopic studies show evidence for hole trapping in CdS nanostructures, which naturally leads the concern of extracting trapped holes from CdS in photocatalytic reactions. Here, we report a study of hole transfer dynamics from colloidal CdS nanorods (NRs) to adsorbed hole acceptor, phenothiazine (PTZ), using transient absorption spectroscopy. We show that >99% of the holes were trapped (with a time constant of 0.73 ps) in free CdS NRs to form a photoinduced transient absorption (PA) feature. In the presence of PTZ, we observed the decay of the PA feature and corresponding formation of oxidized PTZ(+) radicals, providing direct spectroscopic evidence for trapped hole transfer from CdS. The trapped holes were extracted by PTZ in 3.8 ± 1.7 ns (half-life) to form long-lived charge separated states (CdS(-)-PTZ(+)) with a half lifetime of 310 ± 50 ns. This hole transfer time is significantly faster than the slow conduction band electron-trapped hole recombination (half lifetime of 67 ± 1 ns) in free CdS NRs, leading to an extraction efficiency of 94.7 ± 9.0%. Our results show that despite rapid hole trapping in CdS NRs, efficient extraction of trapped holes by electron donors and slow recombination of the resulting charge-separated states can still be achieved to enable efficient photoreduction using CdS nanocrystals.

Beyond Band Alignment: Hole Localization Driven Formation of Three Spatially Separated Long-Lived Exciton States in CdSe/CdS Nanorods

Colloidal one-dimensional semiconductor nanoheterostructures have emerged as an important family of functional materials for solar energy conversion, although the nature of the long-lived exciton state and their formation and dissociation dynamics remain poorly understood. In this paper we study these dynamics in CdSe/CdS dot-in-rod (DIR) NRs, a representative of 1D heterostructures, and DIR-electron-acceptor complexes by transient absorption spectroscopy. Because of a quasi-type II band alignment of CdSe and CdS, it is often assumed that there exists one long-lived exciton state with holes localized in the CdSe seed and electrons delocalized among CdSe and CdS. We show that excitation into the CdS rod forms three distinct types of long-lived excitons that are spatially localized in the CdS rod, in and near the CdSe seed and in the CdS shell surrounding the seed. The branching ratio of forming these exciton states is controlled by the competition between the band offset driven hole localization to the CdSe seed and hole trapping to the CdS surface. Because of dielectric contrast induced strong electron-hole interaction in 1D materials, the competing hole localization pathways lead to spatially separated long-lived excitons. Their distinct spatial locations affect their dissociation rates in the presence of electron acceptors, which has important implications for the application of 1D heterostructures as light-harvesting materials.

Efficient and Ultrafast Formation of Long-Lived Charge-Transfer Exciton State in Atomically Thin Cadmium Selenide/Cadmium Telluride Type-II Heteronanosheets

Colloidal cadmium chalcogenide nanosheets with atomically precise thickness of a few atomic layers and size of 10-100 nm are two-dimensional (2D) quantum well materials with strong and precise quantum confinement in the thickness direction. Despite their many advantageous properties, excitons in these and other 2D metal chalcogenide materials are short-lived due to large radiative and nonradiative recombination rates, hindering their applications as light harvesting and charge separation/transport materials for solar energy conversion. We showed that these problems could be overcome in type-II CdSe/CdTe core/crown heteronanosheets (with CdTe crown laterally extending on the CdSe nanosheet core). Photoluminesence excitation measurement revealed that nearly all excitons generated in the CdSe and CdTe domains localized to the CdSe/CdTe interface to form long-lived charge transfer excitons (with electrons in the CdSe domain and hole in the CdTe domain). By ultrafast transient absorption spectroscopy, we showed that the efficient exciton localization efficiency could be attributed to ultrafast exciton localization (0.64 ± 0.07 ps), which was facilitated by large in-plane exciton mobility in these 2D materials and competed effectively with exiton trapping at the CdSe or CdTe domains. The spatial separation of electrons and holes across the CdSe/CdTe heterojunction effectively suppressed radiative and nonradiative recombination processes, leading to a long-lived charge transfer exciton state with a half-life of ∼ 41.7 ± 2.5 ns, ∼ 30 times longer than core-only CdSe nanosheets.

Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes.

Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.