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Dive into the research topics where Kailash C. Jain is active.

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Featured researches published by Kailash C. Jain.


IEEE Electron Device Letters | 1989

Characteristics of trench j-MOS power transistors

Bernard A. MacIver; Stephen J. Valeri; Kailash C. Jain; James C. Erskine; R. Rossen

The fabrication of trench j-MOS transistors in bulk silicon, so that they can be operated in either a three-terminal or a four-terminal mode, is presented. When the transistors are operated in accumulation mode, the specific on-resistance is 0.8 m Omega -cm/sup 2/. In the four-terminal mode a high transconductance, 290 S/cm/sup 2/, is achieved by manipulating the inversion layer charge. In the three-terminal mode, mixed pentode-triode drain characteristics are exhibited. Response times are comparable to those of a junction FET. These properties make the trench j-MOS transistor attractive for power switching.<<ETX>>


international soi conference | 1991

A thyri-magnetodiode

Kailash C. Jain

The magnetic field sensitivity of p-i-n diodes fabricated in silicon-on-sapphire (SOS) depends on the establishment of a bipolar conduction region. Because of low effective lifetimes of the SOS material, tau /sub eff/ approximately=10 ns, the bipolar regime occurs at high electric fields, the junction temperature rises, and magnetosensitivity is reduced. The reproducibility of Si-Al/sub 2/O/sub 3/ interfaces is also a problem. A novel two-terminal devices has been built in 5-10 Omega -cm n-type 1.0- mu m-thick


SPIE International Symposium on Optical Engineering and Industrial Sensing for Advance Manufacturing Technologies | 1988

Whole-Field Residual Stress Measurements In Silicon Wafers During Integrated Circuit Fabrication

Raghunath P. Khetan; Kailash C. Jain

An optical method is proposed which generates the two-dimensional out-of-plane partial contours of silicon wafers and requires only a single numerical differentiation to compute the whole-field residual stress distribution. The optical arrangement for the method requires the use of either a linear or a crossed grating and two large lenses. At the recording stage, this arrangement results in an instantaneous reconstruction of the grating lines into the contours of partial slopes of the wafer. Visual inspection of these contours allows an immediate qualitative evaluation of the local stress variations. Contours with good contrast are obtained even for wafers with circuits printed on them. The partial curvatures are obtained by numerically differentiating the slope contour data. The wafer is modelled as a composite structure consisting of a thin film deposited on the silicon substrate. The two-dimensional residual stress distributions in the film and the substrate are obtained from the curvatures using a plate bending theory approach. The proposed method was used to follow the development of residual stresses in silicon wafers during integrated circuit fabrication using an n-MOS silicon gate process. It was found that the local oxidation step introduced maximum residual stresses whereas the metalization step had a small counter influence on the stresses. The local residual stress variations were enough to cause the conventional average measure to be in error by a factor of two even for wafers without stacking faults. This method can be a valuable tool for a fast and accurate quality control of incoming and outgoing wafers, and can provide useful guidelines for wafer fabrication process research.


Archive | 1988

Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures

Kailash C. Jain; Jacob A. Abraham


Archive | 1986

High voltage depletion mode MOS power field effect transistor

Bernard A. MacIver; Kailash C. Jain


Archive | 1987

Vertical depletion-mode j-MOSFET

Stephen J. Valeri; Bernard A. MacIver; Kailash C. Jain


Archive | 1986

Method for patterning silicon dioxide with high resolution in three dimensions

Kailash C. Jain; Bernard A. MacIver


Archive | 2003

Methods of making gas sensors and sensors formed therefrom

Kailash C. Jain; Kenneth M. Rahmoeller; Da Yu Wang; Eric P. Clyde; Paul Casey Kikuchi


Archive | 2002

Co-fired oxygen sensor elements

Kailash C. Jain; Eric P. Clyde; Da Yu Wang; Paul Casey Kikuchi


Archive | 1996

Titania exhaust gas oxygen sensor

Robert Gregory Fournier; Kailash C. Jain; Carlos A. Valdes

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