Kangkang Wang

Structural controlled magnetic anisotropy in Heusler L10−MnGa epitaxial thin films

Ferromagnetic L10−MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

Heteroepitaxial growth and surface structure of L10-MnGa(111) ultra-thin films on GaN(0001)

L10-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

An easy-to-implement filter for separating photo-excited signals from topography in scanning tunneling microscopy

In order to achieve elemental and chemical sensitivity in scanning tunneling microscopy (STM), synchrotron x-rays have been applied to excite core-level electrons during tunneling. The x-ray photo-excitations result in tip currents that are superimposed onto conventional tunneling currents. While carrying important physical information, the varying x-ray induced currents can destabilize the feedback loop causing it to be unable to maintain a constant tunneling current, sometimes even causing the tip to retract fully or crash. In this paper, we report on an easy-to-implement filter circuit that can separate the x-ray induced currents from conventional tunneling currents, thereby allowing simultaneous measurements of topography and chemical contrasts. The filter and the schematic presented here can also be applied to other variants of light-assisted STM such as laser STM.

Three-dimensional spin mapping of antiferromagnetic nanopyramids having spatially alternating surface anisotropy at room temperature.

Antiferromagnets play a key role in modern spintronic devices owing to their ability to modify the switching behavior of adjacent ferromagnets via the exchange bias effect. Consequently, detailed measurements of the spin structure at antiferromagnetic interfaces and surfaces are highly desirable, not only for advancing technologies but also for enabling new insights into the underlying physics. Here using spin-polarized scanning tunneling microscopy at room-temperature, we reveal in three-dimensions an orthogonal spin structure on antiferromagnetic compound nanopyramids. Contrary to expected uniaxial anisotropy based on bulk properties, the atomic terraces are found to have alternating in-plane and out-of-plane magnetic anisotropies. The observed layer-wise alternation in anisotropy could have strong influences on future nanoscale spintronic applications.

Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(0001¯)

Deposition of manganese onto the gallium-rich, nitrogen-polar GaN(0001¯) surface results in the formation of quantum-height island structures. Two unique island heights differing by one atomic layer are observed, including 0.93 nm high islands which are unstable against the formation of 1.13 nm high islands. A row structure at the islands’ surface suggests a mixture of Mn and Ga, while growth of one-dimensional atomic chains at the surface of the stable 1.13 nm high islands indicates a strongly anisotropic diffusion. The observed behavior is consistent with a quantum size effect driven growth mechanism.

Efficient kinematical simulation of reflection high-energy electron diffraction streak patterns for crystal surfaces

Abstract An efficient program with a user-friendly graphical interface has been developed for simulating reflection high-energy electron diffraction patterns obtained on crystal surfaces. The calculations are based on a kinematical approach which considers single electron scattering events at the surface. This time-efficient approach is in most cases sensitive enough for distinguishing different structural models, even if they differ very subtly. The results are presented in realistic two-dimensional density plots which can be directly compared to experimental observations. This program provides a useful tool in studying different structural models for crystal surfaces. Program summary Program title: RHEEDsim Catalogue identifier: AEJC_v1_0 Program summary URL: http://cpc.cs.qub.ac.uk/summaries/AEJC_v1_0.html Program obtainable from: CPC Program Library, Queenʼs University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 2752 No. of bytes in distributed program, including test data, etc.: 367 205 Distribution format: tar.gz Programming language: Matlab (version > 7.6.0) Computer: Personal Computers Operating system: Windows with Matlab environment RAM: Greater than 1 MB Classification: 7.4 Nature of problem: Reflection high-energy electron diffraction (RHEED) has been widely used in studying crystal surface structures all over the world, especially in combination with ultra-high vacuum molecular beam epitaxy systems. In addition to determining the surface smoothness, RHEED is also a very useful tool in studying surface reconstructions, which are often encountered at the growth surfaces of semiconductors and alloys. While the positions of the fractional streaks can be used to determine the basic information of the surface supercells, the intensity modulations on the fractional streaks provide further insights on the details within these unit cells. Kinematic approach is an efficient method for simulating the RHEED patterns based on various surface structural models, which can help unraveling the surface atomic structure. Solution method: The kinematic approach utilized here assumes single scattering events. Furthermore, the Ewald sphere is approximated into a planar surface for computing the streak intensities (which are most relevant to real experiments). Structure factors are calculated based on a given input of atomic species and their coordinates, with user modifiable form factors. In addition to the intensity modulation within the surface plane, additional modulations extending into the z direction is also taken into consideration, resulting in realistic density maps of the RHEED streaks, which can be directly compared to experimental observations. Unusual features: The main program RHEEDsim.m calls several local subprograms for certain computational tasks. As a result, all programs should be extracted into a single folder, and that folder should be set as the main directory in Matlab. Running time: The computing time is computer and user parameter dependent, but typically ranges from few seconds to few minutes.

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

Formation of manganese δ-doped atomic layer in wurtzite GaN

We describe the formation of a δ-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001¯) surface, forming a 3×3−R30° reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the 3×3−R30° phase, namely one Mn per each 3×3−R30° unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the δ-doped interface. A model of the resultant δ-doped structure is formulated based on the experimental data, and impl...

A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

Atomic layer structure of manganese atoms on wurtzite gallium nitride (0001)

Submonolayer quantities of Mn are deposited on wurtzite GaN (0001¯). The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3× reconstruction along [101¯0], but only 1× along [112¯0]. Diffraction analysis shows that the 3× streak intensity is maximized at ≈0.86 monolayer of Mn deposition. The results indicate that Mn forms linear chains along the [101¯0] direction with a spacing of 3a/2 along chains and 3a/2 between chains. Correcting the peak coverage for sticking coefficient and accounting for the observed periodicities, a 3×3-R30° model, consisting of 2/3 monolayer of Mn atoms, is proposed.