Andrada-Oana Mandru

Heteroepitaxial growth and surface structure of L10-MnGa(111) ultra-thin films on GaN(0001)

L10-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

Formation of manganese δ-doped atomic layer in wurtzite GaN

We describe the formation of a δ-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001¯) surface, forming a 3×3−R30° reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the 3×3−R30° phase, namely one Mn per each 3×3−R30° unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the δ-doped interface. A model of the resultant δ-doped structure is formulated based on the experimental data, and impl...

Note: Advancement in tip etching for preparation of tunable size scanning tunneling microscopy tips

The two aspects of a scanning tunneling microscopy tip, the macroscopic profile and the nanoscale apex, can be tailored by controlling the tension during electrochemical etching and the solution-electrode contact area via acetone vapor. The apex diameter is shown to be proportional to the square root of the tension, and is demonstrated over apex diameters of 150-500 nm. The apex was found to be created in four distinct shapes where a secondary etching can reshape the tip into a single geometry. Improvement in tip height and stability of the profile are demonstrated versus a non-acetone fabrication control.

Iron on GaN(0001) pseudo-1 × 1 (1+112) investigated by scanning tunneling microscopy and first-principles theory

We have investigated sub-monolayer iron deposition on atomically smooth GaN(0001) pseudo-1 × 1 (1+112). The iron is deposited at a substrate temperature of 360 °C, upon which reflection high energy electron diffraction shows a transformation to a 3×3-R30° pattern. After cooling to room temperature, the pattern transforms to a 6 × 6, and scanning tunneling microscopy reveals 6 × 6 reconstructed regions decorating the GaN step edges. First-principles theoretical calculations have been carried out for a range of possible structural models, one of the best being a Ga dimer model consisting of 2/9 monolayer of Fe incorporated into 7/3 monolayer of Ga in a relaxed but distorted structure.

Magnetostrictive iron gallium thin films grown onto antiferromagnetic manganese nitride: Structure and magnetism

We report structural and magnetic properties of magnetostrictive Fe100−xGax (x ≈ 15) alloys when deposited onto antiferromagnetic manganese nitride and non-magnetic magnesium oxide substrates. From X-ray diffraction measurements, we find that the FeGa films are single crystalline. Scanning tunneling microscopy imaging reveals that the surface morphologies are dictated by the growth temperature, composition, and substrate. The magnetic properties can be tailored by the substrate, as found by magnetic force microscopy imaging and vibrating sample magnetometry measurements. In addition to pronounced tetragonal deformations, depositing FeGa onto manganese nitride leads to the formation of stripe-like magnetic domain patterns and to the appearance of perpendicular magnetic anisotropy.

Molecular beam epitaxial growth and scanning tunneling microscopy studies of the gallium rich trench line structure on N-polar w-GaN( 0001¯)

In addition to the usual set of the well-known reconstructions that have been observed on the N-polar GaN surface, namely 1 × 1, 3 × 3, 6 × 6, and c(6 × 12), an additional structure is occasionally seen at high Ga coverage, which can extend over a large area of the surface. This structure, which is referred to as trench line structure, is partially ordered and consists of parallel-running dark (trench) lines separating wide and narrow strips of atomically ordered regions. There are also randomly placed defects interrupting the ideal ordering. Reflection high energy electron diffraction and scanning tunneling microscopy in ultrahigh vacuum are applied to investigate this trench line structure on samples prepared using molecular beam epitaxy. It is found that the trench line structure results from annealing the Ga-rich c(6 × 12) at high temperature followed by quenching to room temperature. By careful comparison of the scanning tunneling microscopy images with those from neighboring c(6 × 12) regions, it is...