Kaoru Motonami
Mitsubishi Electric
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Publication
Featured researches published by Kaoru Motonami.
Japanese Journal of Applied Physics | 1996
Hiroyuki Ishii; Shigeru Shiratake; Kazuhiro Oka; Kaoru Motonami; Toru Koyama; Junko Izumitani
We found that crystal-originated particles (COP) on a Czochralski-grown Si wafer surface consist of single pits and pair pits, using a pattern-defect inspection machine and SEM. The influence of these pits on the gate oxide reliability was studied by means of a time dependent dielectric breakdown (TDDB) test under constant voltage stress (8 MV/cm). It was clearly demonstrated that when the gate oxide thickness was around 10 nm, in the active region pair pits caused gate oxide failure, while single pits did not. It was also found that broad pair pits, formed by preferential oxidation/etching treatment, did not degrade the gate oxide reliability even when situated in the active region.
Japanese Journal of Applied Physics | 1991
Mikihiro Kimura; Kaoru Motonami; Yasuhiko Onodera
The effect of low temperature hydrogen annealing (LTHA) in reducing the generation current at the local oxidation of silicon (LOCOS) isolation edge can be successfully investigated by C-t measurement of metal-oxide-semiconductor (MOS) capacitors with varying periphery-to-area ratio. The generation current, at the LOCOS isolation edge, can then be measured by the separation of the generated peripheral current and the surface and bulk current generated under the gate electrode. As a result, it becomes clear that the generation current is strongly reduced by annealing at a temperature below 400°C, but at 450°C the reduction is rather small.
Journal of The Society for Information Display | 2005
Shinsuke Yura; Atsuhiro Sono; Tatsuki Okamoto; Yukio Sato; Tetsuo Kojima; Junichi Nishimae; Mitsuo Inoue; Kaoru Motonami
— A pulsed YAG2ω green laser with a line-shaped beam was applied in the crystallization process to fabricate polycrystalline-Si TFTs, and this procedure was compared with excimer-laser annealing (ELA). YAG2ω lasers are superior to excimer lasers in that they have fewer items to maintain and a longer working time ratio. The crystallization mechanism for YAG2ω laser annealing (YLA) based on the lateral growth of grain is different from that of ELA. Its fluence margin was obtained from the n-channel mobility measured from fabricated TFTs and was found to be twice as large as that for ELA. We also found that overlapping irradiation does not change the mobility of TFTs. This is because the distribution of grain size is almost the same as in non-overlapping regions. This suggests the possibility of overlapping irradiation in YLA.
The Japan Society of Applied Physics | 1991
Mikihiro Kimura; Kaoru Motonami; Yasuhiko Onodera
The generation crurent at the LOCOS isolation edge can be measured by the separation of the peripheral current generation and the surface and bulk current generation under the gate electrode. This method is accomplished by a C+ measurement of MOS capacitors with varying a gate area, and the effects of the generation curent reduction at the LOCOS isolation edge by low temperature hydrogen annealing (LTI{A) can be successfully investigated. As a result, it becomes clear that the generation curent is strongly reduced by annealing at a temperature below 400C, but at 450C the reduction is rather small.
Archive | 2007
Toru Takeguchi; Takuji Imamura; Kazushi Yamayoshi; Tomoyuki Irizumi; Atsunori Nishiura; Kaoru Motonami
Archive | 1998
Akira Kitaguchi; Makoto Hatakenaka; Michio Nakajima; Kaoru Motonami; Kiyoyuki Shiroshima; Takekazu Yamashita
Archive | 2015
Mutsumi Tsuda; Yasutoshi Yashiki; Tomohiro Ikeda; Kaoru Motonami
international symposium on power semiconductor devices and ic's | 2010
Shigeto Honda; Ryoich Fujii; Tsuyoshi Kawakami; Seiji Fujioka; Atsushi Narazaki; Kaoru Motonami
Archive | 2007
Toru Takeguchi; Kaoru Motonami
Archive | 2017
Akira Yamashita; Kaoru Motonami; Nobuo Fujiwara; Hidetada Tokioka