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Dive into the research topics where Karl-Heinz Merkel is active.

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Featured researches published by Karl-Heinz Merkel.


Thin Solid Films | 1998

Moisture-resistant properties of SiNx films prepared by PECVD

Hui Lin; Liqiang Xu; Xiang Chen; Xuhong Wang; Mei Sheng; Frank Stubhan; Karl-Heinz Merkel; Juergen Dr Ing Wilde

The barrier properties of silicon nitride films prepared by plasma-enhanced chemical vapor deposition (PECVD) against moisture penetration were studied, with emphasis on the correlation of deposition parameters and moisture permeation rate. The moisture resistance of films have been characterized using infrared spectroscopy and determination of water vapor permeation (WVP) rate. Our results indicate that the gas flux ratio and discharge frequency are the most important factors in controlling the moisture resistance of these films. The best moisture-resistant property in terms of WVP and stability of the film is found in the film deposited in a low frequency (LF) process with lower ratio of silane to ammonia although the general trend is toward decreased WVP with a higher ratio of silane to ammonia in the films deposited freshly by both high and low frequency processes. Too high a ratio of silane to ammonia in LF processes leads to instability of the film after long exposure in a high humidity environment.


Thin Solid Films | 1999

a-SiCx :H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications

Lijun Jiang; Xiang Chen; Xuhong Wang; Liqiang Xu; Frank Stubhan; Karl-Heinz Merkel

Abstract Amorphous hydrogenated silicon carbide (a-SiC x :H) films were fabricated via plasma-enhanced chemical vapor deposition (PECVD) at a low substrate temperature. The properties of the film and their correlation with the deposition parameters were investigated with emphasis on moisture and corrosion resistance. The films can be deposited with good uniformity and repeatability. The moisture resistance is mostly influenced by the reactant gas flow ratio; increasing the silane flow enhances the moisture barrier ability of the film. The deposited film is chemically inert, is not oxidized by moisture at 85°C, and remained unattacked after 2 months immersion in water at room temperature. The film is pinhole-free, and has excellent corrosion resistant properties. Thus this material is deemed a good candidate film for moisture and corrosion resistant applications.


Archive | 1997

Embedding metallic conductors into plastic composition

Johann Wartusch; Karl-Heinz Merkel; Arno Rentsch


Thin Solid Films | 1998

Moisture-resistant properties of SiN x films prepared by PECVD

Hui Lin; Liqiang Xu; Xiang Ming Chen; Xuhong Wang; Mei Sheng; Frank Stubhan; Karl-Heinz Merkel; Juergen Dr Ing Wilde


Archive | 1998

Method to encapsulate metallic conductors of microelectronic components in plastic

Karl-Heinz Merkel; Arno Rentsch; Johann Wartusch


Archive | 1996

Housing for microelectronics components and modules and process for producing it

Arno Rentsch; Jürgen Wilde; Karl-Heinz Merkel; Bernhard Schuch; Hermann Kilian


Archive | 1998

Verfahren zum Einbetten von metallischen Leitern mikroelektrischer Bauelemente in eine Kunststoffmasse

Karl-Heinz Merkel; Arno Rentsch; Johann Wartusch


Archive | 1997

Semiconductor wafer with integrated individual components, method and apparatus for manufacturing a semiconductor wafer

Juergen Dr Ing Wilde; Karl-Heinz Merkel; Karl Dr Strohm


Archive | 1997

Halbleiterscheibe mit integrierten Einzelbauelementen, Verfahren und Vorrichtung zur Herstellung einer Halbleiterscheibe Semiconductor wafer with integrated individual components, method and apparatus for manufacturing a semiconductor wafer

Juergen Dr Ing Wilde; Karl-Heinz Merkel; Karl Dr Strohm


Archive | 1996

Gehäuse für bauelemente und module der mikroelektronik und verfahren zu seiner herstellung

Arno Rentsch; Jürgen Wilde; Karl-Heinz Merkel; Bernhard Schuch; Hermann Kilian

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