Karl Opsomer

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

In this work, the physical and electrical properties of SrxTi1−xOy (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature (250u2009°C) atomic layer deposition (ALD) process, using an alternative precursor set and carefully optimized processing conditions, enabling the use of low-cost, manufacturable-friendly TiN electrodes. Physical analyses show that the film crystallization temperature, its texture and morphology strongly depends on the Sr/Ti ratio. Such physical variations have a direct impact on the electric properties of SrxTi1−xOy based capacitors. It is found that Sr-enrichment result in a monotonous decrease in the dielectric constant and leakage current as predicted by ab initio calculations. The intercept of the EOT vs physical thickness plot further indicates that increasing the Sr-content at the film interface with the bottom TiN...

Interdiffusion and crystallization in HfO2/Al2O3 superlattices

The interplay of interdiffusion and crystallization in HfO2/Al2O3 superlattices during spike annealing at 1050u2009°C was studied using x-ray reflectivity and x-ray diffraction. A transition in thermal stability was found as a function of HfO2 thickness between 2.3 and 3.2 nm. This transition is due to a crossover of HfO2 crystallization and amorphous HfO2/Al2O3 interdiffusion kinetics. For thin HfO2, amorphous HfO2 and Al2O3 interdiffuse and subsequently crystallize as HfAlOx into a cubic-HfO2-like phase. For thicker HfO2, HfO2 layers crystallize individually into the monoclinic phase. As a consequence, interdiffusion between HfO2 and Al2O3 is suppressed because of the immiscibility of Al2O3 in monoclinic HfO2.

Properties of Ultrathin High Permittivity ( Nb1 − x Ta x ) 2O5 Films Prepared by Aqueous Chemical Solution Deposition

Ultrathin Nb1�xTax2O5 films, with thicknesses from 3t o 25 nm, were deposited by chemical solution deposition starting from aqueous precursor solutions. The film’s dielectric properties were characterized by capacitance–voltage and current–voltage measurements. Permittivities ranged from 20 to 31 after annealing at 600°C, with the highest value obtained for pure Nb2O5. With increasing Nb content, increasing leakage currents were observed. The crystallization temperature was determined by in situ X-ray diffraction measurement for films with 15 nm thickness: Nb2O5 was crystalline as deposited 600°C, while the crystallization temperature of solid solutions increased with increasing Ta content, up to 875°C for pure Ta2O5. NbTaO5 showed a marked increase in permittivity from 27 to 38 after crystallization anneal at 600 and 800°C, respectively. For Nb2O5, no significant difference in permittivity was observed between amorphous and crystalline layers.

Novel EUV mask absorber evaluation in support of next-generation EUV imaging

In next-generation EUV imaging for foundry N5 dimensions and beyond, inherent pitch- and orientation-dependent effects on wafer level will consume a significant part of the lithography budget using the current Ta-based mask. Mask absorber optimization can mitigate these so-called mask 3D effects. Thin metal absorbers like Ni and Co have been experimentally investigated due to their high EUV absorption, but they pose challenges on the current technology of subtractive mask patterning [1]. A simulation study of attenuated EUV phase shift masks has identified through multiobjective optimization superior imaging solutions for specific use cases and illumination conditions [2]. Evaluating novel EUV mask absorbers evolves on two levels, demonstrating (1) improvements from lithographic perspective and (2) compatibility with the full mask supply chain including material deposition, absorber patterning, scanner environment compatibility and mask lifetime. On the lithographic level, we have identified regions based on the material optical properties and their gain in imaging performance compared to the reference Ta-based absorber. Within each improvement region we engineered mask absorber materials to achieve both the required imaging capabilities, as well as the technical requirements for an EUV mask absorber. We discuss the material development of Te-based alloys and Ag-based layered structures, because of their high EUV extinction. For the attenuated phase shift materials, we start from a Ru-base material, due to its low refractive index, and construct Ru-alloys. On the experimental level, we examined our novel mask absorber materials against an initial mask absorber requirement list using an experimental test flow. Candidate materials are evaluated on film morphology and stability through thermal, hydrogen, EUV loading, and chemical cleaning, for their EUV optical constants by EUV reflectometry, as well as preliminary for selective dry etch. The careful mask absorber evaluation, combining imaging simulations and experimental material tests, allowed us to narrow down to promising combinations for novel EUV mask absorbers.