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Katsumi Suzuki

Fujitsu

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international interconnect technology conference | 2003

A highly reliable nano-clustering silica with low dielectric constant (k<2.3) and high elastic modulus (E=10 GPa) for copper damascene process

Masanobu Ikeda; Junya Nakahira; Yoshihisa Iba; Hideki Kitada; Nobuyuki Nishikawa; Motoshu Miyajima; Shun-ichi Fukuyama; Noriyoshi Shimizu; Kazuto Ikeda; Takayuki Ohba; Iwao Sugiura; Katsumi Suzuki; Yoshihiro Nakata; Shuichi Doi; Naoki Awaji; Ei Yano

A highly reliable nano-clustering silica (NCS) with low dielectric constant(k<2.3) and high elastic modulus (E=10 Gpa) for copper damascene process has been developed by controlling the size and distribution of pores in the NCS precursor. Using this material in a process compatible with the 90 nm technology node, we successfully demonstrated Cu wiring in NCS dielectrics.

Archive | 2001

Low dielectric constant film material, film and semiconductor device using such material

Yoshihiro Nakata; Shun-ichi Fukuyama; Katsumi Suzuki; Ei Yano; Tamotsu Owada; Iwao Sugiura

Archive | 2004

Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant film

Yoshihiro Nakata; Katsumi Suzuki; Iwao Sugiura; Ei Yano

Archive | 2002

Insulation film forming material, insulation film, method for forming the insulation film, and semiconductor device

Yoshihiro Nakata; Katsumi Suzuki; Iwao Sugiura; Ei Yano

Archive | 2003

Coating liquid for forming amorphous silica coating film of low dielectric constant and process for producing the coating liquid

Akira Nakashima; Miki Egami; Michio Komatsu; Yoshihiro Nakata; Ei Yano; Katsumi Suzuki

Archive | 2001

Film forming material, useful for the production of semiconductor devices, has a low dielectric constant and comprises siloxane resin and polycarbosilane.

Yoshihiro Nakata; Shun-ichi Fukuyama; Katsumi Suzuki; Ei Yano; Tamotsu Owada; Iwao Sugiura

Archive | 2003

Coating liquid for forming amorphous silica-based coating film with low dielectric constant

Akira Nakashima; Miki Egami; Michio Komatsu; Yoshihiro Nakata; Ei Yano; Katsumi Suzuki

Archive | 2002

Halbleitervorrichtung, umfassend als Zwischenschicht-Isolationsfilm einen Film mit niedriger Dielektrizitätskonstante

Yoshihiro Nakata; Katsumi Suzuki; Iwao Sugiura; Ei Yano

Archive | 2001

Semiconductor devices with film material with low dielectric constant and methods for their preparation

Shun-ichi Kawasaki Fukuyama; Yoshihiro Kawasaki Nakata; Tamotsu Owada; Iwao Sugiura; Katsumi Suzuki; Ei Kawasaki Yano

Archive | 2001

Zusammensetzung auf Siliziumbasis, Film mit niedriger Dielektrizitätskonstante und Verfahren zu dessen Herstellung

Yoshihiro Nakata; Katsumi Suzuki; Iwao Sugiura; Ei Yano

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