Kazu Suenaga

Graphene Annealing: How Clean Can It Be?

Surface contamination by polymer residues has long been a critical problem in probing graphenes intrinsic properties and in using graphene for unique applications in surface chemistry, biotechnology, and ultrahigh speed electronics. Poly(methyl methacrylate) (PMMA) is a macromolecule commonly used for graphene transfer and device processing, leaving a thin layer of residue to be empirically cleaned by annealing. Here we report on a systematic study of PMMA decomposition on graphene and of its impact on graphenes intrinsic properties using transmission electron microscopy (TEM) in combination with Raman spectroscopy. TEM images revealed that the physisorbed PMMA proceeds in two steps of weight loss in annealing and cannot be removed entirely at a graphene susceptible temperature before breaking. Raman analysis shows a remarkable blue-shift of the 2D mode after annealing, implying an anneal-induced band structure modulation in graphene with defects. Calculations using density functional theory show that local rehybridization of carbons from sp(2) to sp(3) on graphene defects may occur in the random scission of polymer chains and account for the blue-shift of the Raman 2D mode.

Graphene Oxide: Structural Analysis and Application as a Highly Transparent Support for Electron Microscopy

We report on the structural analysis of graphene oxide (GO) by transmission electron microscopy (TEM). Electron diffraction shows that on average the underlying carbon lattice maintains the order and lattice-spacings of graphene; a structure that is clearly resolved in 80 kV aberration-corrected atomic resolution TEM images. These results also reveal that single GO sheets are highly electron transparent and stable in the electron beam, and hence ideal support films for the study of nanoparticles and macromolecules by TEM. We demonstrate this through the structural analysis of physiological ferritin, an iron-storage protein.

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2

Phase transitions can be used to alter the properties of a material without adding any additional atoms and are therefore of significant technological value. In a solid, phase transitions involve collective atomic displacements, but such atomic processes have so far only been investigated using macroscopic approaches. Here, we show that in situ scanning transmission electron microscopy can be used to follow the structural transformation between semiconducting (2H) and metallic (1T) phases in single-layered MoS2, with atomic resolution. The 2H/1T phase transition involves gliding atomic planes of sulphur and/or molybdenum and requires an intermediate phase (α-phase) as a precursor. The migration of two kinds of boundaries (β- and γ-boundaries) is also found to be responsible for the growth of the second phase. Furthermore, we show that areas of the 1T phase can be controllably grown in a layer of the 2H phase using an electron beam.

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Electronic junctions on edge Two-dimensional materials such as graphene are attractive materials for making smaller transistors because they are inherently nanoscale and can carry high currents. However, graphene has no band gap and the transistors are “leaky”; that is, they are hard to turn off. Related transition metal dichalcogenides (TMDCs) such as molybdenum sulfide have band gaps. Transistors based on these materials can have high ratios of “on” to “off” currents. However, it is often difficult to make a good voltage-biased (p-n) junction between different TMDC materials. Li et al. succeeded in making p-n heterojunctions between two of these materials, molybdenum sulfide and tungsten selenide. They did this not by stacking the layers, which make a weak junction, but by growing molybdenum sulfide on the edge of a triangle of tungsten selenide with an atomically sharp boundary Science, this issue p. 524 The regrowth of the second transition metal dichalcogenide monolayer by edge epitaxy creates a lateral p-n heterojunction. Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys

Band gap engineering of atomically thin two-dimensional (2D) materials is the key to their applications in nanoelectronics, optoelectronics, and photonics. Here, for the first time, we demonstrate that in the 2D system, by alloying two materials with different band gaps (MoS2 and WS2), tunable band gap can be obtained in the 2D alloys (Mo(1-x)W(x)S(2) monolayers, x = 0-1). Atomic-resolution scanning transmission electron microscopy has revealed random arrangement of Mo and W atoms in the Mo(1-x)W(x)S(2) monolayer alloys. Photoluminescence characterization has shown tunable band gap emission continuously tuned from 1.82 eV (reached at x = 0.20) to 1.99 eV (reached at x = 1). Further, density functional theory calculations have been carried out to understand the composition-dependent electronic structures of Mo(1-x)W(x)S(2) monolayer alloys.

Phase patterning for ohmic homojunction contact in MoTe2

Making better contacts A key issue in fabricating transistors is making a good electrical contact to the semiconductor gate material. For two-dimensional materials, one route is through a phase transition that converts a hexagonally packed semiconductor phase into a distorted octahedrally packed metallic phase. Cho et al. show that laser heating of molybdenum telluride (MoTe2) achieves this conversion through the creation of Te vacancies. The phase transition improves charge carrier mobility while maintaining the low resistance necessary for improved transistor function. Science, this issue p. 625 A laser-heating method creates a metallic phase on semiconducting molybdenum telluride. Artificial van der Waals heterostructures with two-dimensional (2D) atomic crystals are promising as an active channel or as a buffer contact layer for next-generation devices. However, genuine 2D heterostructure devices remain limited because of impurity-involved transfer process and metastable and inhomogeneous heterostructure formation. We used laser-induced phase patterning, a polymorph engineering, to fabricate an ohmic heterophase homojunction between semiconducting hexagonal (2H) and metallic monoclinic (1T’) molybdenum ditelluride (MoTe2) that is stable up to 300°C and increases the carrier mobility of the MoTe2 transistor by a factor of about 50, while retaining a high on/off current ratio of 106. In situ scanning transmission electron microscopy results combined with theoretical calculations reveal that the Te vacancy triggers the local phase transition in MoTe2, achieving a true 2D device with an ohmic contact.

Clean Transfer of Graphene for Isolation and Suspension

Fabrication of large-area clean graphene sheets is the first step toward the development of high-performance applications in surface chemistry and biotechnology as well as in high-mobility electronics. Here we demonstrate the clean transfer of graphene grown by chemical vapor deposition on Cu foil, with surface cleanness defined by transmission electron microscopy (TEM) in combination with Raman scattering on the same position of suspended graphene sheets. For clean graphene, the Raman spectra exhibit distinctive features that can explicitly discriminate from that of graphene covered with a thin layer of amorphous carbon such as residual poly(methyl methacrylate) (PMMA). By applying this technique to graphene sheets with various degrees of surface cleanness, we show that the quantitative characterization of the thickness of surface contaminants is possible based on multiple reflections and interference of light in samples.

Plumbing carbon nanotubes

Since their discovery, the possibility of connecting carbon nanotubes together like water pipes has been an intriguing prospect for these hollow nanostructures. The serial joining of carbon nanotubes in a controlled manner offers a promising approach for the bottom-up engineering of nanotube structures--from simply increasing their aspect ratio to making integrated carbon nanotube devices. To date, however, there have been few reports of the joining of two different carbon nanotubes. Here we demonstrate that a Joule heating process, and associated electro-migration effects, can be used to connect two carbon nanotubes that have the same (or similar) diameters. More generally, with the assistance of a tungsten metal particle, this technique can be used to seamlessly join any two carbon nanotubes--regardless of their diameters--to form new nanotube structures.

Mixed low-dimensional nanomaterial: 2D ultranarrow MoS2 inorganic nanoribbons encapsulated in quasi-1D carbon nanotubes.

Quasi-one-dimensional nanotubes and two-dimensional nanoribbons are two fundamental forms of nanostructures, and integrating them into a novel mixed low-dimensional nanomaterial is fascinating and challenging. We have synthesized a stable mixed low-dimensional nanomaterial consisting of MoS(2) inorganic nanoribbons encapsulated in carbon nanotubes (which we call nanoburritos). This route can be extended to the synthesis of nanoburritos composed of other ultranarrow transition-metal chalcogenide nanoribbons and carbon nanotubes. The widths of previously synthesized MoS(2) ribbons are greater than 50 nm, while the encapsulated MoS(2) nanoribbons have uniform widths down to 1-4 nm and layer numbers down to 1-3, depending on the nanotube diameter. The edges of the MoS(2) nanoribbons have been identified as zigzag-shaped using both high-resolution transmission electron microscopy and density functional theory calculations.

Graphene nanoribbons from unzipped carbon nanotubes: atomic structures, Raman spectroscopy, and electrical properties.

We investigated the atomic structures, Raman spectroscopic and electrical transport properties of individual graphene nanoribbons (GNRs, widths ~10-30 nm) derived from sonochemical unzipping of multiwalled carbon nanotubes (MWNTs). Aberration-corrected transmission electron microscopy (TEM) revealed a high percentage of two-layer (2 L) GNRs and some single-layer ribbons. The layer-layer stacking angles ranged from 0° to 30° including average chiral angles near 30° (armchair orientation) or 0° (zigzag orientation). A large fraction of GNRs with bent and smooth edges was observed, while the rest showed flat and less smooth edges (roughness ≤1 nm). Polarized Raman spectroscopy probed individual GNRs to reveal D/G ratios and ratios of D band intensities at parallel and perpendicular laser excitation polarization (D(∥)/D(⊥)). The observed spectroscopic trends were used to infer the average chiral angles and edge smoothness of GNRs. Electrical transport and Raman measurements were carried out for individual ribbons to correlate spectroscopic and electrical properties of GNRs.