Kazuaki Sato
Toyota
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Featured researches published by Kazuaki Sato.
Materials Science Forum | 2016
Katsunori Danno; Satoshi Yamaguchi; Hiroyuki Kimoto; Kazuaki Sato; Takeshi Bessho
Solution growth of high-quality 4H-SiC bulk crystals has been performed by using Si-Cr based melt at 2000°C. Through enlargement of crystal diameter which is controlled by meniscus height during growth, dislocation free area has been successfully obtained on the periphery of the crystal. However, the threading dislocations in the seed crystal have penetrated into the grown crystal and have been located around the center of the crystal. To reduce dislocation density in the grown crystals, we have used threading-dislocation-free seedcrystals prepared by solution growth on (1-100). The solution growth on the seed crystal sliced from the (1-100) crystal has resulted in very low dislocation density of grown crystals. In an area of 16 mm2 for the growth surface, no dislocation has been detected.
Materials Science Forum | 2016
Yong Zhao Yao; Yukari Ishikawa; Yoshihiro Sugawara; Koji Sato; Katsunori Danno; Takayuki Shirai; Kazuaki Sato; Takeshi Bessho; Yumiko Takahashi; Yoshiki Yamashita; Keiichi Hirano
Threading dislocations (TDs) in 4H-SiC have been studied by comparing etch pits formed by NaOH vapor etching with results of synchrotron monochromatic-beam X-ray topography (XRT) taken under different g-vectors. Burgers vectors determined based on XRT results were utilized to investigate the etch pit characteristics of edge (TED), screw (TSD) and mixed (Burgers vector b=c+a, TMD) threading dislocations. It has been found that pit formation by NaOH vapor etching was very different to that by conventional molten KOH etching. We discuss the possibility of using NaOH vapor etching to distinguish TMDs from TSDs, and report a variety of characteristic etch pits formed by this method and their correlations to dislocation behavior.
Applied Physics Express | 2016
Katsunori Danno; Makoto Saito; Akinori Seki; Kazuaki Sato; Takeshi Bessho; Tsunenobu Kimoto
The solubility and diffusivity of Cr atoms in 4H-SiC epilayers are investigated. The formation energy of 4H-SiC containing Cr has been calculated by first-principles calculation. Si sites have been found to be more stable than C sites or interstitial sites for Cr atoms owing to the lower formation energy. The solubility estimated from the formation energy coincides with the saturated Cr concentration in SiC crystals grown by solution growth. The diffusivity of implanted Cr atoms (located at interstitial sites) was not affected by the charge states of Cr atoms and/or vacancies such as carbon vacancies and silicon vacancies, implying the interstitial diffusion of Cr atoms.
Metallurgical and Materials Transactions A-physical Metallurgy and Materials Science | 1998
Kazuaki Sato; Merton C. Flemings
Crystal Growth & Design | 2016
Hironori Daikoku; Motohisa Kado; Akinori Seki; Kazuaki Sato; Takeshi Bessho; Kazuhiko Kusunoki; Hiroshi Kaidou; Yutaka Kishida; Koji Moriguchi; Kazuhito Kamei
Archive | 2008
Mikio Umehara; Kazuaki Sato; Daichi Kadowaki
Archive | 2006
Masaaki Matsubara; Kazuaki Sato; Osamu Furuta; Mikio Umehara; Toshiaki Tsuzaki; Chee Poh Chua
Archive | 2004
Makoto Hasegawa; Atsushi Nishibashi; Kazuaki Sato; Kentaro Suemitsu; Sukeyuki Uchiumi; 和明 佐藤; 祐之 内海; 健太郎 末光; 淳 西橋; 誠 長谷川
Archive | 2000
Hiroyuki Kiiri; Takayasu Koike; Kazuaki Sato; 和明 佐藤; 浩幸 喜入; 隆康 小池
Archive | 2001
Toru Desaki; Soji Kamiya; Kazuaki Sato; Yukio Okouchi; Tetsuya Nukami