Kazuyoshi Shinada

Low Leakage Current Polysilicon Oxide Grown by Two-Step Oxidation

The decrease in polysilicon oxide leakage current was experimentally investigated in the range of the oxide thickness from 14nm to 60nm. As a result, it was concluded that the suppression of the oxidation rate at an early stage of the oxidation reduced the conductance of the polysilicon oxide.

Wide operating voltage range and low power consumption EPROM structure for consumer oriented ASIC applications

To satisfy demands for low power consumption and low-voltage operation in consumer-orientated ASIC (application-specific integrated circuit) applications, an EPROM (erasable programmable read-only memory) with a novel cell structure and circuit configuration has been developed. It offers a wide operating voltage range, from 2.7 to 5.5 V, and low power consumption of about several hundred mu W when applied to a 4-bit microcontroller.<<ETX>>