Keh-Chiang Ku

Saturated ferromagnetism and magnetization deficit in optimally annealed Ga1-xMnxAs epilayers

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed

Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}

Hybrid ferromagnetic/semiconductor heterostructures for spintronics

epilayers for

Two-carrier transport in epitaxially grown MnAs

1.35%l~xl~8.3%.

Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

The Curie temperature

Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs

{(T}_{c}),

Tunable Anomalous Hall Effect in a Nonferromagnetic System

conductivity, and exchange energy increase with Mn concentration up to

Observation of magnetoresistance polarity reversal in 3D to 2D tunneling in an asymmetric GaMnAs resonant tunneling diode

x\ensuremath{\sim}0.05,

Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

but are almost constant for larger x, with

Magnetoresistance in an asymmetric Ga 1-x Mn x As resonant tunneling diode

{T}_{c}\ensuremath{\sim}110\mathrm{K}.