Keith E. Krohn

A new surface electron-emission mechanism in diamond cathodes

An electron-emission mechanism for cold cathodes is described based on the enhancement of electric fields at metal–diamond–vacuum triple junctions. Unlike conventional mechanisms, in which electrons tunnel from a metal or semiconductor directly into vacuum, the electrons here tunnel from a metal into diamond surface states, where they are accelerated to energies sufficient to be ejected into vacuum. Diamond cathodes designed to optimize this mechanism exhibit some of the lowest operational voltages achieved so far.

Comparison of electric field emission from nitrogen‐doped, type Ib diamond, and boron‐doped diamond

Field emission of electrons from boron‐ and nitrogen‐doped diamond is compared. Emission from boron‐doped diamond requires vacuum electric fields of 20–50 V μm−1, while nitrogen‐doped, type Ib diamond requires fields of 0–1 V μm−1. Since boron‐doped diamond is very conductive, very little voltage drop occurs in the diamond during emission. Nitrogen‐doped diamond is insulating, so during emission a potential of 1–10 kV appears in the diamond. This potential is a function of the back contact metal‐diamond interface. A roughened interface substantially reduces the potential in the diamond and increases emission. The electrons are often emitted from the nitrogen‐doped diamond as beamlets. These beamlets leave the surface of the diamond at angles up to 45° from the substrate normal. Although the vacuum field is small, these electrons have energies of several kV. It is unknown whether the electrons are accelerated to these energies in the bulk of the diamond, or at high electric fields near the emitting surface.

Fabrication of crystalline organic waveguides with an exceptionally large electro-optic coefficient

Single-crystal optical waveguides of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST), an organic material with a large electro-optic coefficient, have been obtained. DAST decomposes at its melting temperature, making its growth from the melt difficult. However, graphoepitaxy allows for >1 mm s−1 growth, 1×105 times faster than conventional techniques, and produces crystals of the correct dimensions for optical waveguides, 1–15 μm on a side and 5–10 mm long. The crystals grow with the c-axis normal to the substrate, and with in-plane orientation determined by lithographic patterning. The electro-optic coefficient dn/dE is 600±300 pm V−1 at 1.55 μm wavelength. Optical losses are <10 dB cm−1.

Field emission at 10Vcm−1 with surface emission cathodes on negative-electron-affinity insulators

Surface emission cathodes reported here consist of two electrodes separated by ∼10μm on a negative-electron-affinity glass, Cs2Si4O9. The electrodes consist of a W film suspended over the insulator by a gap of 0–70 nm. When electron emission is initiated with a bias of 0–300 V, between the electrodes, the cathodes continue to emit after the bias is removed and for anode voltages as low as 20 V, electric fields <10Vcm−1. The emission is modeled by the electrons tunneling from the electrode onto the glass surface and from there they are emitted into vacuum. Emission without bias is the result of positive charge in the insulator, which replaces the need for a bias voltage.

Attenuating phase-shifting mask at 157 nm

An attenuating phase shifting mask has been designed, fabricated, and tested at 157 nm. It consists of two layers, a metal attenuator and a transparent phase shifter. The metal, platinum, was chosen for its chemical and radiation stability. The phase shifter was a commercial spin-on glass. A single step of pattern transfer has been implemented, which significantly simplifies the fabrication process of the mask. The lithographic advantage in increased depth of focus was demonstrated for 130-nm spaces and contacts, and it was found to agree with numerical simulations.

Optically switched conductivity of epitaxial diamond on nitrogen doped diamond substrates

Epitaxial diamond with remarkably low p-type doping (1×1014–1×1017 cm−3) and exceptionally low compensation ∼1×1013 cm−3, has enabled the demonstration of a optically-switched conduction modulation of the epitaxial layer. Charge exchange between the diamond substrate and the epitaxial layer makes it possible to modulate the conductivity of the epitaxial layer. Incandescent light will make the lightly p-doped epitaxial layer insulating and ultraviolet radiation will make the layer conductive again. Once the layer conductivity has been established it will remain in the same electrical state for days, if kept in the dark.