Kejia Zhou

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

High pulse repetition rate (≥10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

Hybrid Quantum Well/Quantum Dot Structure for Broad Spectral Bandwidth Emitters

We report a hybrid quantum well (QW)/quantum dot active element for an application in broadband sources. These structures consist of an InGaAs QW and six InAs dot-in-well (DWELL) layers. The single QW is designed to emit at a wavelength coincident with the second excited state of the quantum dot. We compare two hybrid QW/quantum dot samples where the QW position is changed, and show that carrier transport effects make QW placement very important through current-voltage, capacitance-voltage, photocurrent, and temperature-dependent spontaneous emission measurements. Using the optimal structure, due to the combined effects of quantum dot ground states, first excited state, and QW emission, a positive modal gain spanning ~300 nm is achieved for the segmented contact device. The values for modal gain are further confirmed by simultaneous three-state lasing, which is studied spectroscopically. Finally, a hybrid QW/quantum dot superluminescent diode (SLD) is reported; the device exhibits a 3 dB emission spectrum of 213 nm, centered at 1230 nm with a corresponding output power of 1.1 mW. The hybrid SLD is then assessed for an application in an optical coherence tomography system; an axial resolution of ~4 μm is predicted.

Quantum dot selective area intermixing for broadband light sources

We report a comparison of different capping materials on the intermixing of modulation p-doped InAs/In(Ga)As quantum dots (QD). QD materials with different caps are shown to exhibit significant difference in their optical properties during the annealing process. The selective area intermixing technique is demonstrated to laterally integrate two and three different QD light emitting devices with a single electrical contact. A spectral bandwidth of 240nm centered at 1188nm is achieved in a device with two sections. By calculating the point spread function for the obtained emission spectra, and applying the Rayleigh criteria for resolution, an axial resolution of 3.5μm is deduced. A three section device realizes a spectral bandwidth of 310nm centered at 1145nm. This corresponds to an axial resolution of 2.4μm. Such a small predicted axial resolution is highly desirable in optical coherence tomography system and other coherence-based systems applications.

Dominant role of many-body effects on the carrier distribution function of quantum dot lasers

The effects of quantum dot (QD) ensemble inhomogeneity along with a free-carrier-induced energy shift and homogeneous broadening on the carrier distribution function are studied. Using this model, we show that the dominant factors determining the carrier distribution function are the free carrier effects and not the choice of carrier statistics.

Development of broad spectral bandwidth hybrid QW/QD structures from 1000-1400 nm

We describe the development of hybrid quantum well (QW)/quantum dot (QD) active elements to achieve broad spectral bandwidth spontaneous emission and gain. We have previously reported that the placement of the QW within the active element is a critical factor in obtaining broad spectral bandwidth emission. We now present new designs to further broaden the spontaneous emission from hybrid structures by increasing the number of QD layers and dot density, and by using QDs with wider state-separation. Introducing chirped QD layers reduced the modulation in the spontaneous emission spectra, and by utilising self-heating effects and state-filling, a spontaneous emission with 3dB line-width of 350nm is obtained.

Broad bandwidth emission from hybrid QW/QD structures

We previously demonstrated a hybrid quantum well/quantum dot structure to enhance the gain and spontaneous emission bandwidth of a quantum dot active region. We now present new designs to further broaden the spontaneous emission from hybrid QW/QD structure. Utilizing a high junction temperature, and chirped quantum dot layers with higher areal densities, increased layer number, and increased state separation a spontaneous emission FWHM of ~350nm is achieved.

Hybrid quantum well/quantum dot structures for broad spectral bandwidth devices

In this paper we report a hybrid quantum well (QW) and quantum dot (QD) structure to achieve a broad spontaneous emission and gain spectra. A single quantum well is introduced into a multi-layer stack of quantum dots, spectrally positioned to cancel the losses due to the second excited state of the dots. Attributed to the combined effect of QW and QDs, we show room temperature spontaneous emission with a 3dB bandwidth of ~250 nm and modal gain spanning over ~300 nm. We describe how this is achieved by careful design of the structure, balancing thermal emission from the QW and transport/capture processes in the QDs. We will also compare results from a QD-only epitaxial structure to describe how broadband gain/emission can be achieved in this new type of structure.

Near- infrared, mode-locked waveguide lasers with multi-GHz repetition rates

In this work, we discuss mode-locking results obtained with low-loss, ion-exchanged waveguide lasers. With Yb3+-doped phosphate glass waveguide lasers, a repetition rate of up to 15.2 GHz was achieved at a wavelength of 1047 nm with an average power of 27 mW and pulse duration of 811 fs. The gap between the waveguide and the SESAM introduced negative group velocity dispersion via the Gires Tournois Interferometer (GTI) effect which allowed the soliton mode-locking of the device. A novel quantum dot SESAM was used to mode-lock Er3+, Yb3+-doped phosphate glass waveguide lasers around 1500 nm. Picosecond pulses were achieved at a maximum repetition rate of 6.8 GHz and an average output power of 30 mW. The repetition rate was tuned by more than 1 MHz by varying the pump power.

Characterization of recombination processes in quantum dot lasers using small signal modulation

The effect of modulation p-doping of 1.3μm quantum dot lasers is studied by spectrally resolved small-signal modulation. We describe the effect of modulation p-doping and temperature on their recombination coefficients, of importance for temperature-insensitive lasers.

Hybrid quantum well/quantum dot active element for broad spectral bandwidth emitters and amplifiers

Broad spectral band-width spontaneous emission and gain is achieved by utilizing a hybrid quantum-well/quantum dot active element. The importance of carrier transport and positioning of the QW within the active region is discussed.