Kenneth E. Bean

The influence of crystal orientation on silicon semiconductor processing

Silicon crystallographic orientation effects on semiconductor processing from single crystal growth through completed devices or circuits have been studied. The preferred octahedral crystal habit of silicon provides for stable crystal growth on the {111} plane, but the other low-index planes, {110} and {100}, are becoming more commonly used, in spite of greater difficulty in growth and processing of these crystals. Chemical and physical properties such as etch rates and Youngs modulus are affected by orientation. The effect of crystal orientation on technologies such as diffusion under film (DUF), dielectric isolation, epitaxy, selective etch and epitaxial refill, and simultaneous deposition of single crystal and polycrystal silicon are presented. In addition, orientation effects on processes of oxidation, diffusion, alloying, and scribing are discussed.

Chemical vapor deposition applications in microelectronics processing

Abstract The chemical vapor deposition of epitaxial and polycrystalline silicon and of its compounds (oxides, nitrides and carbides) is discussed with respect to their applications and uses in silicon microelectronics processing. Epitaxial silicon deposition as well as selective deposition are considered from the aspects of substrate orientation, the silicon-bearing halide or hydride, and predeposition conditioning through orientation-dependent etching and deposition. Nucleation and atomic transport are also discussed. We examine the use of polycrystalline silicon deposition in thin film metallization, e.g. in MOS devices, and in thick film devices, e.g. in full dielectric isolation silicon processing. The chemical vapor deposition of SiO 2 and Si 3 N 4 is discussed with respect to deposition conditions and their use as dielectric and/or passivation films. Thin film deposition of SiC is also of considerable interest in silicon semiconductor processing and is considered from the standpoints of deposition conditions, properties and applications.