Kent A. Hallman

Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition

Vanadium dioxide (VO(2)) is a promising reconfigurable optical material and has long been a focus of condensed matter research owing to its distinctive semiconductor-to-metal phase transition (SMT), a feature that has stimulated recent development of thermally reconfigurable photonic, plasmonic, and metamaterial structures. Here, we integrate VO(2) onto silicon photonic devices and demonstrate all-optical switching and reconfiguration of ultra-compact broadband Si-VO(2) absorption modulators (L < 1 μm) and ring-resonators (R ~ λ(0)). Optically inducing the SMT in a small, ~0.275 μm(2), active area of polycrystalline VO(2) enables Si-VO(2) structures to achieve record values of absorption modulation, ~4 dB μm(-1), and intracavity phase modulation, ~π/5 rad μm(-1). This in turn yields large, tunable changes to resonant wavelength, |Δλ(SMT)| ~ 3 nm, approximately 60 times larger than Si-only control devices, and enables reconfigurable filtering and optical modulation in excess of 7 dB from modest Q-factor (~10(3)), high-bandwidth ring resonators (>100 GHz). All-optical integrated Si-VO(2) devices thus constitute platforms for reconfigurable photonics, bringing new opportunities to realize dynamic on-chip networks and ultrafast optical shutters and modulators.

Silicon waveguide optical switch with embedded phase change material

Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.

Imaging Nanometer Phase Coexistence at Defects During the Insulator–Metal Phase Transformation in VO2 Thin Films by Resonant Soft X-ray Holography

We use resonant soft X-ray holography to image the insulator-metal phase transition in vanadium dioxide with element and polarization specificity and nanometer spatial resolution. We observe that nanoscale inhomogeneity in the film results in spatial-dependent transition pathways between the insulating and metallic states. Additional nanoscale phases form in the vicinity of defects which are not apparent in the initial or final states of the system, which would be missed in area-integrated X-ray absorption measurements. These intermediate phases are vital to understand the phase transition in VO2, and our results demonstrate how resonant imaging can be used to understand the electronic properties of phase-separated correlated materials obtained by X-ray absorption.Nanoscale phase coexistence and inhomogeneity are ubiquitous in correlated electron materials, existing in doped Mott insulators, manganites, and high-temperature superconductors. The small length scales and lack of contrast mechanisms make it extremely challenging to measure real-space images of the phase coexistence with high resolution. Yet, images aid our understanding of how phase coexistence and domain boundaries dictate the exotic material properties. Here we show that resonant soft-X-ray holography, previously employed to image magnetic domains, can be used to image phase separation on the nanoscale. We observe nucleation and growth of nanometre-sized metallic domains out of the insulating phase of the prototypical correlated material VO2, using linearly polarized coherent synchrotron radiation. By spectrally resolving the holograms, we extract differential soft X-ray absorption spectra with 50 nm spatial resolution. Furthermore, when combined with ultra-bright and ultra-short X-ray sources, X-ray holography could capture both nanoscale spatial variations and temporal fluctuations that occur close to the transition temperatures or are induced by femtosecond light pulses that cannot be observed with alternative imaging methods.

Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases

The debate about whether the insulating phases of vanadium dioxide (VO2) can be described by band theory or must be described by a theory of strong electron correlations remains unresolved even after decades of research. Energy-band calculations using hybrid exchange functionals or including self-energy corrections account for the insulating or metallic nature of different phases, but have not yet successfully accounted for the observed magnetic orderings. Strongly-correlated theories have had limited quantitative success. Here we report that, by using hard pseudopotentials and an optimized hybrid exchange functional, the energy gaps and magnetic orderings of both monoclinic VO2 phases and the metallic nature of the high-temperature rutile phase are consistent with available experimental data, obviating an explicit role for strong correlations. We also report a potential candidate for the newly-found metallic monoclinic phase and present a detailed magnetic structure of the M2 monoclinic phase.

Optical modulation in silicon-vanadium dioxide photonic structures

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.