Kh. S. Karimov

Temperature-dependent I-V characteristics of organic-inorganic heterojunction diodes

In this paper, heterojunctions were fabricated by employing p-type Si and thin films of poly-N-epoxipropylcarbazole (PEPC) doped with tetracyanoquinodimethane (TCNQ). The PEPC films were grown on Si wafers at room temperature but with different gravity (g) conditions:-1, 123, 277, and 1107g. Current-voltage (I-V) characteristics of the grown hybrid structures were evaluated as a function temperature (T) ranging from 20/spl deg/C to 60/spl deg/C. It was found that all samples are p-p isotype heterojunctions and the junctions fabricated at a high value of g, i.e., at 277 and 1107 g, showed reversible rectifying properties as a function of device temperature. Whereas the behavior of devices fabricated at 123 and 1 g were rectifying at room temperature, but became almost nonconductive after treating the samples at 60/spl deg/C. Rectification ratio, threshold voltage, reverse saturation current, and junction resistance of the fabricated junctions were evaluated at different temperatures. At T=60/spl deg/C, the devices grown at 1107 g exhibited rectification ratio less than unity which may be attributed to the switching of the depletion at the interface. This has been explained by assuming the generation of carriers are at elevated temperatures in the organic film, and their subsequent emission from the organic to the inorganic side of the heterojunction.

Humidity and temperature sensing properties of copper oxide-Si-adhesive nanocomposite

Smart and professional humidity and temperature sensors have been fabricated by utilizing copper oxide-Si-adhesive composite and pure copper oxide nanosheets. Copper oxide nanosheets are synthesized by low temperature stirring method and characterized by field emission scanning electron microscopy, which reveals that synthesized product is composed of randomly oriented nanosheets, which are grown in high density with an average thickness of~80±10 nm. X-ray diffraction confirms that the grown nanosheets consist of well crystalline monoclinic CuO. X-ray photoelectron spectroscopy and Fourier transform infrared (FTIR) spectroscopy also confirm that the synthesized nanomaterial is pure CuO without any impurity. The fabricated sensors exhibit good temperature sensitivity of -4.0%/°C and -5.2%/°C and humidity sensitivity of -2.9%/%RH and -4.88%/%RH, respectively for copper oxide-Si-adhesive composite and pure copper oxide nanosheets. The average initial resistance of the sensors is equal to 250 MΩ and 55 MΩ for the composite and pure copper oxide based sensors, respectively.

Humidity sensing properties of Cu2O-PEPC nanocomposite films

A blend of copper oxide nanopowder (Cu2O), 3 wt.%, and poly-N-epoxypropylcarbazole (PEPC), 2 wt.%, in benzol was drop-casted on glass substrates with pre-deposited surface-type silver electrodes for the fabrication of Cu2O-PEPC nanocomposite thin films. The thicknesses of the Cu2O-PEPC films were in the range of 10–13 μm. The effect of humidity on the electrical properties of the nanocomposite films was investigated by measuring the capacitance and dissipation of the samples at two different frequencies of the applied voltage: 120 Hz and 1 kHz. The AC resistance of the samples was determined from the dissipation values, and the DC resistance was measured directly. The effect of ageing on the humidity sensing properties of the nanocomposite was observed. After ageing, it was observed that at 120 Hz and 1 kHz, under a humidity of up to 86% RH, the capacitance of the cell increased by 85 and 8 times, and the resistance decreased by 345 and 157 times, accordingly, with respect to 30% RH conditions. It was found that with an increase in frequency, the capacitance and resistance of the samples decreased. It is assumed that the humidity response of the cell is associated with the diffusion of water vapors and doping of the semiconductor nanocomposite by water molecules.

Electrical characterization of the organic semiconductor Ag/CuPc/Au Schottky diode

This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine (CuPc) based diode. A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type Ag/CuPc/Au Schottky diode. The current-voltage characteristics were measured at room temperature under dark conditions. The barrier height was calculated as 1.05 eV The values of mobility and conductivity was found to be 1.74 × 10−9 cm2 (V · s) and 5.5 × 10−6 Ω−1 · cm−1, respectively. At low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at higher voltages.

Orange dye-polyaniline composite based impedance humidity sensors

This study presents the fabrication and investigation of humidity sensors based on orange dye (OD) and polyaniline (PANI) composite films. A blend of 3 wt.% OD with 1 wt.% PANI was prepared in 1 ml water. The composite films were deposited on glass substrates between pre-deposited silver electrodes. The gap between the electrodes was 45 μm. The sensing mechanism was based on the impedance and capacitance variations due to the absorption/desorption of water vapor. It was observed that with the increase in relative humidity (RH) from 30% to 90%, the impedance decreases by 5.2×104 and 8.8×103 times for the frequencies of 120 Hz and 1 kHz, respectively. The impedance—humidity relationship showed a more uniform change compared to the capacitance—humidity relationship in the RH range of 30% to 90%. The consequence of annealing, measuring frequency, response and recovery time, and absorption—desorption behavior of the humidity sensor were also discussed in detail. The annealing resulted in an increase in sensitivity of up to 2.5 times, while the measured response time and recovery time were 34 s and 450 s, respectively. The impedance—humidity relationship was simulated.

A carbon nanotube-based pressure sensor

In this study, a carbon nanotube (CNT)-based Al/CNT/Al pressure sensor was designed, fabricated and investigated. The sensor was fabricated by depositing CNTs on an adhesive elastic polymer tape and placing this in an elastic casing. The diameter of multiwalled nanotubes varied between 10 and 30 nm. The nominal thickness of the CNT layers in the sensors was in the range ~300–430 μm. The inter-electrode distance (length) and the width of the surface-type sensors were in the ranges 4–6 and 3–4 mm, respectively. The dc resistance of the sensors decreased 3–4 times as the pressure was increased up to 17 kN m−2. The resistance–pressure relationships were simulated.

Electrical characterization of the ITO/NiPc/PEDOT: PSS junction diode

This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT?:?PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current?voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.

Photo-organic field effect transistor based on a metalloporphyrin

We report the effect of light on the output characteristics of the organic field effect transistor fabricated by using the 5,10,15,20-Tetrakis(3 � ,5 � -di-tertbutylphenyl)porphyrinatocopper(II) (TDTPPCu) as a channel material and demonstrate light for controlling the drain‐source current instead of the gate voltage. Upon illumination, a detectable change in the drain‐source current was observed.

Aluminium phthalocyanine chloride thin films for temperature sensing

This study presents the fabrication and temperature sensing properties of sensors based on aluminium phthalocyanine chloride (AlPcCl) thin films. To fabricate the sensors, 50-nm-thick electrodes with 50-?m gaps between them are deposited on glass substrates. AlPcCl thin films with thickness of 50?100 nm are deposited in the gap between electrodes by thermal evaporation. The resistance of the sensors decreases with increasing thickness and the annealing at 100 ?C results in an increase in the initial resistance of sensors up to 24%. The sensing mechanism is based on the change in resistance with temperature. For temperature varying from 25 ?C to 80 ?C, the change in resistance is up to 60%. Simulation is carried out and results obtained coincide with experimental data with an error of ?1%.

Humidity sensitive organic field effect transistor

This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor. The organic field effect transistor was fabricated on thoroughly cleaned glass substrate, in which the junction between the metal gate and the organic channel plays the role of gate dielectric. Thin films of organic semiconductor copper phthalocynanine (CuPc) and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes. The output and transfer characteristics of the fabricated device were performed. The effect of humidity on the drain current, drain current-drain voltage relationship, and threshold voltage was investigated. It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.