Kil-Sung Lee

Dye-Containing Methacrylic Polymers in the Composition of Photo Resists for Complementary Metal Oxide Semiconductor Image Sensors

The trend in the development and manufacturing of Complementary Metal Oxide Semiconductor (CMOS) image sensors is to miniaturize pixels on the chips and hence to improve their imaging characteristics by providing a higher image resolution. As CMOS technology scales down into submicron regions, the conventional color filters are no longer suitable for generating the desired optical density. The major drawback of the conventional color filters produced from pigment-based positive tone photosensitive compositions, is the heterogeneous dispersion of pigments in photoresist composition resulting in color irregularities due to coarse particles of the pigments. One of the most perspective ways to solve this problem is a replacing the pigment with a dye as a coloring agent and thus, increasing solubility of the latter to obtain a homogeneous colored photoresist composition. In this paper, several novel red dye-containing materials are synthesized and tested to provide a redcolored photosensitive composition. This red-colored photosensitive composition is very promising for application as color filters for CMOS image sensors with high resolution and high level of integration architecture.

P‐74: Synthesis and Characterizations of High‐Photosensitive Monomers for Black Matrix in Liquid Crystal Displays

Black matrix in liquid crystal displays plays important parts such as blocking the light leakage and enhancing the contrast ratio among the RGB pixels. In this paper, the authors describe new multi-functional monomers that may be used in black matrix to enhance the sensitivity of photo-resist.