King Lien Tai

System-in-package (SIP): challenges and opportunities

In this paper, we propose the concept of System-In-Package (SIP) as a generalization of System-On-Chip (SOC). System-In-Package overcomes formidable integration barriers without compromising individual chip technologies. The goal of SIP is to match or exceed SOC performance with lower cost. SIP technology platform that provides the needed integration is described. Applications include integrating memory with logic and integrating radio frequency ICs with high-quality (high-Q) passive components. SIP technology will unleash the innovations of designers and unlock the full potential of IC technology.

Silicon-on-silicon MCMs with integrated passive components

The authors evaluate a prototype silicon-on-silicon multichip module for potential use in cost-driven applications. The incorporation of integrated passive components, resistors and capacitors, in the module substrate is a significant advantage in many of these kinds of applications. A module has been built that incorporates both linear and bipolar and digital CMOS circuits. The unique features of the module are discussed, as well as the properties and performance limits of the resulting passive components.<<ETX>>

High Q-factor inductors integrated on MCM Si substrates

High quality factor (Q) inductors were designed and fabricated on high-resistivity (2000 /spl Omega//spl middot/cm) Si substrates with multichip module (MCM) fabrication technology. A Q-factor of 30 was achieved for an inductor of 4 nH at 1-2 GHz. To enhance the Q-factor and reduce the parasitic coupling capacitance, a staggered double metal-layered structure was utilized by taking advantage of the double-layered metal lines in MCM. With electromagnetic simulation tools, computer-aided analysis was used to optimize the device characteristics. The skin effect and the lossy substrate effect on the performance of the radio frequency (RF) thin-film inductors were studied. The fabrication process used polyimide as the dielectric layer and aluminum as the metal layer. The use of the low dielectric-constant material, polyimide, reduces the parasitic coupling capacitance between metal lines and increases the quality factor and the self-resonant frequency for the RF integrated inductors.

Silicon-on-silicon integration of a GSM transceiver with VCO resonator

Accurate and spurious-free design of an integrated VCO resonator in a GSM transceiver is demonstrated. The high-Q inductor (Q=60 at 1 GHz) in the resonator is on a high-resistivity silicon substrate and the GSM chip is flip-chip mounted on the same substrate. The VCO meets all GSM requirements: phase noise is-142 dBc/Hz at 10 MHz from the 1018 MHz center frequency. A single bipolar chip contains the RF transmit, receive, and synthesizer subsections for the GSM standard. The addition of an external low-noise amplifier, power amplifier, and filters complete the GSM radio section. A number of inductors and capacitors are integrated onto the chip. Many of the passive components needed to operate the transceiver, however, are poor candidates for on-chip integration either because their values are too large or because they have stringent quality factor (Q) requirements.

A silicon-on-silicon multichip module technology with integrated bipolar components in the substrate

To address the needs of cost driven, mixed signal applications, we have developed a silicon-on-silicon technology that incorporates both passive and active devices in the module substrate. The technology combines a simple, double-diffused epitaxial bipolar technology with our thin-film MCMs. We describe the basic elements of the technology, typical active device properties and some examples of their use in a low-cost MCM.<<ETX>>

S parameter-based experimental modeling of high Q MCM inductor with exponential gradient learning algorithm

Lumped inductors are very desirable passive components in wireless/RF circuits integrated on MCM substrate. This paper models the inductor from on-wafer high frequency measurement by utilizing the S parameter formulation and exponential gradient method. The S parameter formulation enables us to understand the phase shifting effects within the model while the exponential gradient learning algorithm provides us with a more robust and better fitting technique than the gradient descent algorithm. Both the magnitudes and phases of all S parameters fit well for all the inductors we constructed. It is shown that the phase shifting of the distributed effects should not be neglected even in MCM-D technology. The resulting experimental model provides measurement-verified solid ground for circuit design and numerical characterization.

Trends in silicon-on-silicon multichip modules

Three example applications of silicon-on-silicon multichip modules are discussed: a module used in a parallel processor, a low-cost silicon module for a high-volume consumer product application, and a high-performance digital telecommunications module. These applications illustrate the changes occurring in this technology and the forces that are driving these changes.<<ETX>>

Domain microscopy in chalcogenide alloy glass thin films

Abstract We report the observation of very well resolved polygonal domain (not island) trough networks in thin glass films. The linear troughs are observed by electron microscopy to be as narrow as 30 A and the hexagonal domain diameters are as large as 1000 (± 100) A. The composition dependence of the average diameters of the polygonal structures correlates well with the glass-forming tendency and agrees very well with the predictions of a recent topological model.

An I/O CMOS buffer set for silicon multichip module's (MCM)

A set of I/O CMOS buffers for MCM is described. When simulation results of the MCM buffers are compared against conventional standard cell CMOS buffers, several advantages emerge. The results indicate that the new buffers dissipate 5 times less power, reduce propagation delay from chip core to another core from 3-6 nsec, and increase the frequency of operation by 2.5 times when compared to conventional CMOS buffers. Actual measurements between these buffers confirm these simulation results.<<ETX>>

A 27 mW CMOS RF oscillator operating at 1.2 GHz

A low power dissipation oscillator circuit in CMOS has been fabricated. The circuit uses inductors and capacitors to form a tank circuit while cross-coupled MOS devices provide the positive feedback to sustain oscillations. The inductors are formed on glass and are solder bumped to the die. The measured power dissipation is 1/10 of the simulated CV/sup 2/F generated by conventional means.<<ETX>>