Klaus Jäger

A scattering model for nano-textured interfaces and its application in opto-electrical simulations of thin-film silicon solar cells

We present a scattering model based on the scalar scattering theory that allows estimating far field scattering properties in both transmission and reflection for nano-textured interfaces. We first discuss the theoretical formulation of the scattering model and validate it for nano-textures with different morphologies. Second, we combine the scattering model with the opto-electric asa simulation software and evaluate this combination by simulating and measuring the external parameters and the external quantum efficiency of solar cells with different interface morphologies. This validation shows that the scattering model is able to predict the influence of nano-textured interfaces on the solar cell performance. The scattering model presented in this manuscript can support designing nano-textured interfaces with optimized morphologies.

A scattering model for surface-textured thin films

We present a mathematical model that relates the surface morphology of randomly surface-textured thin films with the intensity distribution of scattered light. The model is based on the first order Born approximation [see e.g., M. Born and E. Wolf, Principles of Optics, 7th ed. (Cambridge University Press, Cambridge, England, 1999) ] and on Fraunhofer scattering. Scattering data of four transparent conductive oxide films with different surface textures were used to validate the model and good agreement between the experimental and calculated intensity distribution was obtained.

Towards optical optimization of planar monolithic perovskite/silicon-heterojunction tandem solar cells

Combining inorganic–organic perovskites and crystalline silicon into a monolithic tandem solar cell has recently attracted increased attention due to the high efficiency potential of this cell architecture. Promising results with published efficiencies above 21% have been reported so far. To further increase the device performance, optical optimizations enabling device related guidelines are highly necessary. Here we experimentally show the optical influence of the ITO thickness in the interconnecting layer and fabricate an efficient monolithic tandem cell with a reduced ITO layer thickness that shows slightly improved absorption within the silicon sub-cell and a stabilized power output of 17%. Furthermore we present detailed optical simulations on experimentally relevant planar tandem stacks to give practical guidelines to reach efficiencies above 25%. By optimizing the thickness of all functional and the perovskite absorber layers, together with the optimization of the perovskite band-gap, we present a tandem stack that can yield ca 17.5 mA cm− 2 current in both sub-cells at a perovskite band-gap of 1.73 eV including losses from reflection and parasitic absorption. Assuming that the higher band-gap of the perovskite absorber directly translates into a higher open circuit voltage, the perovskite sub-cell should be able to reach a value of 1.3 V. With that, realistic efficiencies above 28% are within reach for planar monolithic tandem cells in which the thickness of the perovskite top-cell and the perovskite band-gap are highly optimized. When applying light trapping schemes such as textured surfaces and by reducing the parasitic absorption of the functional layers, for example in spiro-OMeTAD, this monolithic tandem can overcome 30% power conversion efficiency.

Angular resolved scattering measurements of nano-textured substrates in a broad wavelength range

The angular intensity distribution (AID) is a major parameter for evaluating scattering of light by surface-textured thin films. We discuss how the AID can be determined in the near ultraviolet, the visible and the near infrared and evaluate the used method by comparing the obtained measurement results to the results obtained with other methods. Measuring the AID in a broad wavelength range is of great use for the solar cell community, because textured thin films are widely used to enhance the photocurrent in thin-film solar cells.

Angular resolved scattering by a nano-textured ZnO/silicon interface

Textured interfaces in thin-film silicon solar cells improve the efficiency by light scattering. A technique to get experimental access to the angular intensity distribution (AID) at textured interfaces of the transparent conductive oxide (TCO) and silicon is introduced. Measurements are performed on a sample with polished microcrystalline silicon layer deposited onto a rough TCO layer. The AID determined from the experiment is used to validate the AID obtained by a rigorous solution of Maxwell’s equations. Furthermore, the applicability of other theoretical approaches based on scalar scattering theory and ray tracing is discussed with respect to the solution of Maxwell’s equations.

Designing optimized nano textures for thin-film silicon solar cells.

Thin-film silicon solar cells (TFSSC), which can be manufactured from abundant materials solely, contain nano-textured interfaces that scatter the incident light. We present an approximate very fast algorithm that allows optimizing the surface morphology of two-dimensional nano-textured interfaces. Optimized nano-textures scatter the light incident on the solar cell stronger leading to a higher short-circuit current density and thus efficiency. Our algorithm combines a recently developed scattering model based on the scalar scattering theory, the Perlin-noise algorithm to generate the nano textures and the simulated annealing algorithm as optimization tool. The results presented in this letter allow to push the efficiency of TFSSC towards their theoretical limit.

Effect of substrate morphology slope distributions on light scattering, nc-Si:H film growth, and solar cell performance.

Thin-film silicon solar cells are often deposited on textured ZnO substrates. The solar-cell performance is strongly correlated to the substrate morphology, as this morphology determines light scattering, defective-region formation, and crystalline growth of hydrogenated nanocrystalline silicon (nc-Si:H). Our objective is to gain deeper insight in these correlations using the slope distribution, rms roughness (σ(rms)) and correlation length (lc) of textured substrates. A wide range of surface morphologies was obtained by Ar plasma treatment and wet etching of textured and flat-as-deposited ZnO substrates. The σ(rms), lc and slope distribution were deduced from AFM scans. Especially, the slope distribution of substrates was represented in an efficient way that light scattering and film growth direction can be more directly estimated at the same time. We observed that besides a high σ(rms), a high slope angle is beneficial to obtain high haze and scattering of light at larger angles, resulting in higher short-circuit current density of nc-Si:H solar cells. However, a high slope angle can also promote the creation of defective regions in nc-Si:H films grown on the substrate. It is also found that the crystalline fraction of nc-Si:H solar cells has a stronger correlation with the slope distributions than with σ(rms) of substrates. In this study, we successfully correlate all these observations with the solar-cell performance by using the slope distribution of substrates.

Simulations of sinusoidal nanotextures for coupling light into c-Si thin-film solar cells.

We numerically study coupling of light into silicon (Si) on glass using different square and hexagonal sinusoidal nanotextures. After describing sinusoidal nanotextures mathematically, we investigate how their design affects coupling of light into Si using a rigorous solver of Maxwells equations. We discuss nanotextures with periods between 350 nm and 1050 nm and aspect ratios up to 0.5. The maximally observed gain in the maximal achievable photocurrent density coupled into the Si absorber is 7.0 mA/cm2 and 3.6 mA/cm2 for a layer stack without and with additional antireflective silicon nitride layers, respectively. A promising application is the use as smooth anti-reflective coatings in liquid-phase crystallized Si thin-film solar cells.

Numerical optical optimization of monolithic planar perovskite-silicon tandem solar cells with regular and inverted device architectures

We numerically maximize the achievable photocurrent density of planar perovskite-silicon tandem solar cells for different device architectures. For the optimizations we combine the transfer-matrix method with a simulated annealing algorithm. The optimizations are conducted within experimentally accessible and relevant layer-thickness ranges, which allows to extract applicable device guidelines. A comparison between regular and inverted tandem-cell designs reveals that a rear-emitter silicon heterojunction in combination with an inverted perovskite top-cell can yield a photocurrent, which is 1.4 mA/cm2 higher than that of tandem cells with the usual polarity and a front-emitter silicon bottom cell. Switching from the regular to the inverse architecture leads to over 2% (absolute) gain in power conversion efficiency. Finally we show that an efficiency of 30.8% is achievable for such tandem cells with an optimized perovskite band-gap.

Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells

We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity (vI) at the PEDOT:PSS/c-Si interface. An estimated vI of ~400 cm/s demonstrates, that while PEDOT:PSS shows an excellent selectivity on n-type c-Si, the passivation quality provided by the formation of a native oxide at the c-Si surface restricts the performance of the hybrid junction. Furthermore, by comparing the measured external quantum efficiency with optical simulations, we quantify the losses due to parasitic absorption of PEDOT:PSS and reflection of the device layer stack. By pointing out ways to better passivate the hybrid interface and to increase the photocurrent we discuss the full potential of PEDOT:PSS as a front contact in SHJ solar cells.